G. M. Prinz

Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system

ZnO nanorods were implanted with Ga+ ions in a combined scanning-electron-microscope/focused-ion-beam system with doses from 1011to1017cm−2. Electrical resistance measurements performed on single ZnO nanorods yield first an increase of the resistance due to defect formation which lowers the electron mobility. Implantation doses exceeding 1015cm−2 yield a strong decrease of the resistance to values significantly below the resistance before Ga+-ion implantation. Low specific resistivities of about 3×10−3Ωcm are reached without additional annealing treatment after high-dose implantation.

Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton—in accordance to our luminescence measurements—and a combination of the B and C free excitons, respectively.

Electron-beam induced nano-etching of suspended graphene

Besides its interesting physical properties, graphene as a two-dimensional lattice of carbon atoms promises to realize devices with exceptional electronic properties, where freely suspended graphene without contact to any substrate is the ultimate, truly two-dimensional system. The practical realization of nano-devices from suspended graphene, however, relies heavily on finding a structuring method which is minimally invasive. Here, we report on the first electron beam-induced nano-etching of suspended graphene and demonstrate high-resolution etching down to ~7 nm for line-cuts into the monolayer graphene. We investigate the structural quality of the etched graphene layer using two-dimensional (2D) Raman maps and demonstrate its high electronic quality in a nano-device: A 25 nm-wide suspended graphene nanoribbon (GNR) that shows a transport gap with a corresponding energy of ~60 meV. This is an important step towards fast and reliable patterning of suspended graphene for future ballistic transport, nano-electronic and nano-mechanical devices.

Controlled catalytic growth and characterization of zinc oxide nanopillars on a-plane sapphire

Using the vapor-liquid-solid (VLS) technique, we have grown well-aligned nanopillars on [112¯0]-sapphire (a-plane) substrates at atmospheric pressure in a horizontal tube furnace employing gold catalyst seeds of different sizes and densities. It was the aim of the present work to find experimental conditions (source and template temperatures, temperature gradients, carrier gas flow, gold cluster size and density) under which controlled catalytic growth of nanopillars takes place. The VLS process is expected to result in a correlation of the zinc oxide (ZnO) pillar diameters with the gold catalyst cluster size. This is indeed found to hold true except for very small gold clusters. A minimum value of the pillar diameter of about 20 nm on a-plane sapphire is obtained in our experiments, which apparently represents a general limit. Structure characterization relies on high-resolution x-ray diffraction, atomic force microscopy, and high-resolution scanning electron microscopy. Electronic characterization is do...

Cathodoluminescence study of single zinc oxide nanopillars with high spatial and spectral resolution

Single zinc oxide (ZnO) nanopillars grown by the vapor-liquid-solid process on a-plane sapphire are investigated by spatially resolved cathodoluminescence on the nanometer scale in a scanning electron microscope. Spectra were recorded by exciting luminescence along single pillars and across the underlying wetting layer. Luminescence from the excited pillar spots exhibited sharp bound exciton lines and intrinsic free-exciton recombination, whereas the wetting layer showed only very weak luminescence. Along the pillars, virtually no shift of the lines was observed. This is interpreted as evidence for strain-free growth of the pillars. In the bottom region of the pillars aluminum incorporation from the substrate material was found. There are indications for an incorporation of gallium along the pillars due to unintentional doping introduced by the source material. The spot-resolved results are compared to integral photoluminescence measurements with large-area excitation carried out on the same sample region.

Role of the ligand layer for photoluminescence spectral diffusion of CdSe/ZnS nanoparticles

The time-resolved photoluminescence (PL) characteristics of single CdSe/ZnS nanoparticles, embedded in a PMMA layer is studied at room temperature. We observe a strong spectral jitter of up to 55 meV, which is correlated with a change in the observed linewidth. We evaluate this correlation effect using a simple model, based on the quantum confined Stark effect induced by a diffusing charge in the vicinity of the nanoparticle. This allows us to derive a mean distance between the center of the particle and the diffusing charge of approximately 3.3 nm on average, as well as a mean charge carrier displacement within the integration time. The distances are larger than the combined radius of particle core and shell of about 3 nm, but smaller than the overall radius of 5 nm including ligands. These results are reproducible, even for particles which exhibit strong blueing, with shifts of up to 150 meV. Both the statistics and its independence of core-shell alterations lead us to conclude that the charge causing the spectral jitter is situated in the ligands.

Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods

The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanorods were analyzed under ambient conditions and in the chamber of a scanning electron microscope under high-vacuum conditions. Under ambient conditions, the threshold voltage and conductivity may depend strongly on the details of the measurement procedure as the chosen gate voltage range and gate voltage sweep direction. Electron irradiation in a scanning electron microscope under high-vacuum conditions at ∼10−5 mbar leads to desorption of oxygen and other electronegative molecules, which can increase the conductivity by more than two orders of magnitude.

Growth of zinc oxide nanopillars on an iridium/yttria-stabilized zirconia/silicon substrate

Zinc oxide nanopillars were grown by a self-catalyzed growth process on an epitaxial Ir/yttria-stabilized zirconia/Si(111) multilayer structure in an optically heated tube furnace. The pillars obtained stand upright parallel to each other with their c-axis perpendicular to the sample surface. Problems due to alloying of Zn with Si are completely avoided, and no irregularities of the pillars in the initial growth phase are found. Cathodoluminescence measurements show narrow linewidths below 700μeV due to the excellent crystal quality. Termination of ZnO pillars with a flat metallic iridium layer is an attractive issue towards an optical cavity for laser action.

Incorporation of Ga in ZnO∕GaN epitaxial films

Growth of zinc oxide (ZnO) layers on gallium nitride (GaN) substrates benefits from the small lattice mismatch of these two materials. We report on spatially resolved cathodoluminescence studies of ZnO layers grown by a modified chemical vapor deposition process on GaN templates deposited on sapphire substrates. Line scans across the ZnO∕GaN interface reveal the incorporation of gallium from the template into the ZnO layer. Transmission electron microscopy and micro-Raman measurements both indicate that strain relaxation occurs within a distance of a few nanometers from the ZnO∕GaN interface. The diffusion coefficient of gallium in ZnO is determined.

Optically induced mode splitting in self-assembled, high quality-factor conjugated polymer microcavities.

We investigate the whispering gallery modes (WGMs) of self-assembled single microspheres. They consist of a recently developed highly fluorescent π-conjugated copolymer and exhibit excellent optical properties with Q-factors up to 104. Under continuous laser irradiation, we observe a splitting of the highly degenerate spherical WGMs into a multiplet of lines. Comparison with the calculated spectral response of a weakly distorted sphere shows that the optical excitation induces a change of the optical path length in the microcavity so that it resembles a prolate spheroid. The separation of the lines is given by the ellipticity and the azimuthal mode number. Measurements in various gaseous environments suggest that the distortion is caused by light induced oxidation of the polymer. Our findings show that photooxidation can be a beneficial mechanism for in-situ tuning of optically active polymer structures.