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Dive into the research topics where G. N. Darriba is active.

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Featured researches published by G. N. Darriba.


Hyperfine Interactions | 2004

FLAPW Study of the EFG Tensor at Cd Impurities in In2O3

L. A. Errico; M. Rentería; Gabriel Fabricius; G. N. Darriba

We report an ab initio study of the electric-field gradient tensor (EFG) at Cd impurities located at both inequivalent cationic sites in the semiconductor In2O3. Calculations were performed with the FLAPW method, that allows us to treat the electronic structure of the doped system and the atomic relaxations introduced by the impurities in the host lattice in a fully self-consistent way. From our results for the EFG (in excellent agreement with the experiments), it is clear that the problem of the EFG at impurities in In2O3 cannot be described by the point-charge model and antishielding factors.


Physical Review B | 2008

Nuclear quadrupole moment of the {sup 99}Tc ground state

Leonardo Departamento de Fisica Errico; G. N. Darriba; M. Rentería; Tang Zhengning; Heike Emmerich; Stefaan Cottenier

By combining first-principles calculations and existing nuclear magnetic resonance (NMR) experiments, we determine the quadrupole moment of the 9/2{sup +} ground state of {sup 99}Tc to be (-)0.14(3)b. This confirms the value of -0.129(20)b, which is currently believed to be the most reliable experimental determination, and disagrees with two earlier experimental values. We supply ab initio calculated electric-field gradients for Tc in YTc{sub 2} and ZrTc{sub 2}. If this calculated information would be combined with yet to be performed Tc-NMR experiments in these compounds, the error bar on the {sup 99}Tc ground state quadrupole moment could be further reduced.


Physical Review B | 2009

First-principles and time-differential γ-γ perturbed-angular-correlation spectroscopy study of structural and electronic properties of Ta-doped TiO2 semiconductor

G. N. Darriba; L. A. Errico; P. D. Eversheim; Gabriel Fabricius; M. Rentería


Journal of Physical Chemistry C | 2014

Ab Initio Study of Structural, Electronic, and Hyperfine Properties of n-type SnO2:Ta Semiconductor

G. N. Darriba; Emiliano L. Muñoz; L. A. Errico; M. Rentería


Hyperfine Interactions | 2008

Efficiency-optimized low-cost TDPAC spectrometer using a versatile routing/coincidence unit

M. Rentería; A. G. Bibiloni; G. N. Darriba; L. A. Errico; Emiliano L. Muñoz; D. Richard; J. Runco


Journal of Alloys and Compounds | 2010

Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm2O3

Emiliano L. Muñoz; G. N. Darriba; A. G. Bibiloni; L. A. Errico; M. Rentería


Physica Status Solidi (c) | 2005

Temperature dependence of the EFG at Cd-doped Lu2O3: How ab initio calculations can complement PAC experiments

L. A. Errico; M. Rentería; A. G. Bibiloni; G. N. Darriba


Physica B-condensed Matter | 2009

Electric-field gradients at Ta donor impurities in Cr2O3(Ta) semiconductor

G. N. Darriba; L. A. Errico; Emiliano L. Muñoz; D. Richard; P.D. Eversheim; M. Rentería


Physica B-condensed Matter | 2012

Electronic structure of α-Al2O3 slabs: A local environment study

G. N. Darriba; Ricardo Faccio; M. Rentería


Physica Status Solidi B-basic Solid State Physics | 2005

Electric-field gradient characterization at 181Ta impurities in sapphire single crystals

M. Rentería; G. N. Darriba; L. A. Errico; Emiliano L. Muñoz; P.D. Eversheim

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M. Rentería

National University of La Plata

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L. A. Errico

National University of La Plata

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Emiliano L. Muñoz

National University of La Plata

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Heike Emmerich

Otto-von-Guericke University Magdeburg

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D. Richard

National University of La Plata

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A. G. Bibiloni

National University of La Plata

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Gabriel Fabricius

National University of La Plata

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A. F. Pasquevich

National University of La Plata

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