G. P. Srivastava

Anisotropic magneto-microwave Kerr effect in voigt configuration

Abstract The anisotropic magneto-Kerr effect in the presence of a uniform d.c. magnetic field applied perpendicularly to the direction of propagation of radiation (Voigt configuration) is analysed for cubic semiconductors, using R, the amplitude ratio of the two orthogonal elliptically polarized components of the reflected wave, and δ, the phase difference between these two components. The anisotropic behaviour of rotation and ellipticity is studied, at room temperature, for different orientations of the magnetic field with respect to the crystal axis (φH), and for polarization of incident radiation with respect to the magnetic-field direction (φE).

Study of the magneto-microwave effect in gallium antimonide in the voigt configuration

Abstract The paper reports the theoretical study of the magneto-microwave reflection effect (Voigt configuration) in n-type gallium antimonide. The theory for the study of the effect has been formulated for the magnetic induction along the direction of the crystal, and for the crossed electric-and magnetic-field configuration (transverse). The effect of various scattering mechanisms, particularly intervalley scattering, is included in the theoretical analysis. The theoretical study indicates the importance of intervalley scattering in the transport mechanism of GaSb.

Anisotropic Voigt effect in n-type silicon

Abstract Donovan and Webster have studied the free-carrier Voigt effect, valid for all frequencies and magnetic-field strengths, taking into account multiple reflections in n-type germanium semiconductors. This theory is now extended to the case of n-type silicon. The high-frequency magneto-conductivity tensors are derived for a nondegenerate system of electrons, considering lattice scattering only. Theoretical calculations for Voigt rotation are carried out for a typical non-degenerate specimen of n-type silicon having d.c. conductivity α0 = 1.8 × 1011 e.s.u. (at 300 K).