G.R. Facer

QUANTIZED CONDUCTANCE IN QUANTUM WIRES WITH GATE-CONTROLLED WIDTH AND ELECTRON DENSITY

We describe quantum wires and point contacts fabricated in GaAs/AlxGa1−xAs heterostructures that are free of the disorder introduced by modulation doping and in which the electron density and the confining potential are separately adjustable by lithographically defined gates. We observe conductance plateaus quantized near even multiples of e2/h in 2 μm wires and up to 15 conductance steps in 5 μm wires at temperatures below 1 K. Near the conductance threshold the quantum point contact and the 2 μm wire both show additional structure below 2e2/h.

Many-body spin-related phenomena in ultra low-disorder quantum wires

Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to

Many-body spin interactions in semiconductor quantum wires

0.7\ifmmode\times\else\texttimes\fi{}{2e}^{2}/h

Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra low-disorder

Low-disorder quantum wire with gate-tunable width and electron density

\mathrm{GaAs}/{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}

Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

quantum wires with nominal lengths

The extreme quantum limit of 2D and 3D electron systems in semiconductor heterostructures

l=0,

Transport measurements of in-plane critical fields in YBCO to 300 T

0.5, and 2

EVIDENCE FOR BALLISTIC ELECTRON TRANSPORT EXCEEDING 160 MU M IN AN UNDOPEDGAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTOR

\ensuremath{\mu}\mathrm{m},

Low-temperature transport measurements of superconductors and semiconductors in magnetic fields to 800 T

fabricated from structures free of the disorder associated with modulation doping. In a direct comparison in zero magnetic field we observe structure near