G. R. Pandya

Growth and Dislocation Etching of InBi0.8Sb0.2 Single Crystal

InBi 0.8 Sb 0.2 single crystals have been grown by zone melting method. The freezing interface temperature gradient of 30°C/cm has been found to yield the best quality crystals obtainable at growth velocity 1.0 cm/hr. Triangular features have been obtained on the free surface of the as grown crystal. A new dislocation etchant based on nitric acid has been found to give reproducible etch-pitting on the cleavage surface. Standard tests for a dislocation etchant have been carried out and results are reported.

Microhardness studies on triglycine sulphate and diglycine sulphate single crystals

Abstract The (010) cleavage planes of triglycine sulphate (TGS) and anhydrous diglycine sulphate (DGS) crystals were indented using a diamond pyramidal indenter. The variation in the microhardness with load is reported, and the features accompanying the indentation marks on these crystals are discussed. The hardness of TGS is 215 kgf mm −2 while that of DGS is 78 kgf mm −2 .

Etching characteristics of screw and edge dislocations on the cleavage plane of BiSb single crystals

Abstract The chemical etchant used in the present study is capable of revealing screw and edge dislocations which both intersect and lie in the cleavage plane of BiSb single crystals. It was shown that the etch pattern produced by the motion of dislocations allows edge and screw dislocations to be distinguished between.