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Dive into the research topics where G. Rosenfeld is active.

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Featured researches published by G. Rosenfeld.


Surface Science | 1998

Stability of two-dimensional clusters on crystal surfaces: from Ostwald ripening to single-cluster decay

G. Rosenfeld; Karina Morgenstern; Ingo Beckmann; Wulf Wulfhekel; Erik Lægsgaard; Flemming Besenbacher; George Comsa

An overview is given of recent work on the decay of two-dimensional clusters on a Ag(111) surface. Experimental studies using scanning tunnelling microscopy are presented, and various approaches to extract quantitative information on the relevant atomic processes from cluster decay experiments are discussed. It is shown that for typical surface morphologies, the decay rate of individual clusters depends critically on their local environment. Quantitative analysis therefore generally requires complex and detailed case-by-case modelling involving numerical methods. This difficulty can be overcome experimentally by preparing well-defined model structures for which an analytical description can be used without any loss of accuracy.


Surface Science | 1998

Dynamics of vacancy island coalescence on Ag(111)

M. Eßer; Karina Morgenstern; G. Rosenfeld; George Comsa

The reshaping of two-dimensional vacancy islands during coalescence has been studied experimentally on a Ag(111) surface at room temperature using a fast scanning tunneling microscope. Different stages of the coalescence event have been found: the initial break-up of the narrow region separating the two islands (neck formation), the subsequent widening of the neck until an elongated shape has evolved, and the final relaxation to the equilibrium shape, which is an equilateral hexagon with rounded corners. The relaxation time for reshaping is found to be a strong function of the island size: for coalescence events involving islands of a similar size it scales roughly with the third to fourth power of the island diameter.


Physical Review Letters | 1997

DYNAMICS AND ENERGETICS OF SI AD-DIMERS AND AD-DIMER CLUSTERS ON GE(100)

Wulf Wulfhekel; B.J. Hattink; Henricus J.W. Zandvliet; G. Rosenfeld; Bene Poelsema


Physical Review B | 1998

Diffusion mechanisms and the nature of Si ad-dimers on Ge(001)

E. Zoethout; Henricus J.W. Zandvliet; Wulf Wulfhekel; G. Rosenfeld; Bene Poelsema


Archive | 1998

Adatom pairing or dimer formation for Si on Ge(001)

Henricus J.W. Zandvliet; E. Zoethout; Wulf Wulfhekel; G. Rosenfeld; Bene Poelsema


Archive | 1998

Rough interfaces in group IV semiconductor heteroepitaxy: cause and cure

Wulf Wulfhekel; Henricus J.W. Zandvliet; G. Rosenfeld; George Comsa; Bene Poelsema


Archive | 1998

Wachstumskinetik von Si auf Ge(100) : Pyramiden und wie man sie vermeidet

Wulf Wulfhekel; B.J. Hattink; Henricus J.W. Zandvliet; G. Rosenfeld; Bene Poelsema


Archive | 1998

Diffusion of Si-dimers on Ge(001)

E. Zoethout; Wulf Wulfhekel; Henricus J.W. Zandvliet; G. Rosenfeld; Bene Poelsema


Archive | 1998

Diffusion mechanisms of Si ad-dimers on Ge(001)

E. Zoethout; Henricus J.W. Zandvliet; G. Rosenfeld; Bene Poelsema


Archive | 1997

Moving Si ad-dimers and collapsing ad-dimers clusters on Ge(001)

Wulf Wulfhekel; B.J. Hattink; Henricus J.W. Zandvliet; G. Rosenfeld; Bene Poelsema

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Henricus J.W. Zandvliet

MESA+ Institute for Nanotechnology

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Wulf Wulfhekel

Karlsruhe Institute of Technology

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Bene Poelsema

Forschungszentrum Jülich

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Bene Poelsema

Forschungszentrum Jülich

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