G. S. Rychkov

Carbon nanotube field emitters for planar emission vacuum micro-and nanoelectronics

The design and manufacturing technology of carbon nanotube field emitters for novel devices of planar emission vacuum micro-and nanoelectronics are described. Prototypes of diode structures with such emitters are obtained in which the threshold field strength amounts to ∼2 V/μm and the direct to reverse current ratio exceeds 105. The obtained small scatter of characteristics points to the possibility of creating integrated circuits possessing high operation speed and a working temperature range expanded from −60 to +30°C.

Electron flow enhancement with a diamond membrane

Secondary electron emission from 2.5-to 5.0-µm thick diamond films (membranes) is considered. The process is studied in the reflection regime, where secondary electrons leave the front surface of the membrane exposed to primary electrons, and in the transmission regime, where primary electrons cause secondary emission from the opposite surface. The secondary emission coefficient is determined based on the behavior of 0.1-to 30-keV electrons in the solid. In the reflection regime, the secondary emission coefficient may be higher than 100 for electron energies of about 3 keV; in the transmission regime, it is no more than 5 even for 30-keV electrons. The emissivity of the membranes in the transmission regime can be improved, specifically, by using porous membranes, which allow one to obtain characteristics similar to those in the reflection regime. Experimental data obtained agree with calculations. The production of diamond films, including porous membranes, is described.

The use of graphene in vacuum micro- and nanoelectronics

The use of graphene as an electrode stimulating field emission in vacuum micro-and nanoelectronic devices is investigated. Such an application of graphene becomes possible due to its high conductivity, mechanical strength, and transparency to electrons that are incident normal to a surface.

Catalytic growth of nanostructures from carbonaceous substrates: Properties and model notions

The results of experimental investigations of carbon nanostructures grown direct from carbonaceous substrates are presented for the first time. A physical model explaining the shape of as-grown nanostructures is developed. The field emission characteristics of electron emitters based on the proposed structures have been studied.

Vacuum field-emission triode based on electron multiplier concentrator

The design and technology of manufacturing a vacuum field-emission triode (VFT) based on an electron multiplier concentrator that plays the role of a field-emission cathode capable of ensuring a significantly greater current density as compared to that provided by the other existing electron emitters. Experimental current-voltage characteristics of the VFT are presented. The possibility of creating integrated circuits based on the proposed device is discussed.

Peculiarities of graphene layer formation from amorphous carbon and silicon-carbon films

Graphene layers on device structures have been formed from amorphous carbon and silicon-carbon films using a sequence of technological procedures, including thermodiffusion of carbon atoms, their accumulation at the heteroboundary between layers with significantly different diffusion coefficients, and subsequent phase transition from a carbon quasi-liquid to graphene layer.

Evolution of properties in composite carbon films under thermal conditions and in the presence of a catalyst

The characteristics of composite carbon films are experimentally studied. The films are synthesized under concurrent conditions of the magnetron and plasmatron sputtering of molybdenum disilicide and polyphenyl methylsiloxane (PPMS 2/5). Automodulation of the elemental and phase composition is found and studied in the direction of film deposition onto the substrate. The stability of the automodulation parameters to subsequent high-temperature annealing is examined.

Lateral emitter as a base element of integrated emission electronics

A field emitter is the principal element of emission electronics determining the performance of devices. We propose a lateral emitter based on carbon nanotubes for use in integrated emission electronics. The dependences of the emission current on the pulling and control fields have been studied. It is shown that the proposed lateral emitter can be used in all microelectronic analogues of vacuum tubes, from microwave devices to flat displays, the device technology being substantially integrated.

Design and investigation of UV image detectors

The results of investigation of optical image detectors designed for the largest problem, near-VUV, range of the spectrum are presented. The possibility of using a dual-stage image detection system to appreciably lower the sensitivity threshold and make computer data processing feasible is considered. The integration of a UV module into a wideband image detector is studied.

Investigating the formation of nanostructured emission mediums for high-current radio-frequency electronics

The results of investigating nanostructured mediums are presented; the mediums are formed in carbon-based and semiconductor materials by the methods enabling integration into microelectronic technologies. The investigations are carried out with a wide variety of instruments and diagnostic techniques. The investigation’s results are shown to be useful in optimizing parameters of technological processes for the formation of nanostructured mediums.