G.S. Sokolovskii

InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm

Room temperature, tunable, external-cavity short-wavelength InAs/AlSb quantum cascade laser (QCL) is reported. Wavelength tuning of 85 nm for the spectral range between 3190 nm and 3275 nm has been achieved by rotating the diffraction grating forming the external cavity. To suppress lasing inside the QCL cavity, its ridge was tilted by 7° at the external cavity end. The optimal tilting angle of the laser ridge was chosen by careful consideration of the return losses of the TM-polarized waveguide mode from the diffraction grating in a quasi-Littrow configuration and the Fabry-Perot feedback from the tilted laser facet. No antireflection coating was used.

Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

The authors report the observation of strong self-pulsations in molecular-beam epitaxy–grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100–300ps and repetition rates of 0.2–0.6GHz were measured. The average optical power of the pulsations was 0.5–1.0mW at the laser continuous-wave current values of 1.5–2.5mA.

Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide

A compact picosecond all-room-temperature orange-to-red tunable laser source in the spectral region between 600 and 627 nm is demonstrated. The tunable radiation is obtained by second-harmonic generation in a periodically poled potassium titanyl phosphate (PPKTP) multimode waveguide using a tunable quantum-dot external-cavity mode-locked laser. The maximum second-harmonic output peak power of 3.91 mW at 613 nm is achieved for 85.94 mW of launched pump peak power at 1226 nm, resulting in conversion efficiency of 4.55%.

574–647 nm wavelength tuning by second-harmonic generation from diode-pumped PPKTP waveguides

We present a compact, all-room-temperature continuous-wave laser source in the visible spectral region between 574 and 647 nm by frequency doubling of a broadly tunable InAs/GaAs quantum-dot external-cavity diode laser in a periodically poled potassium titanyl phosphate crystal containing three waveguides with different cross-sectional areas (4×4, 3×5, and 2  μm×6  μm). The influence of a waveguides design on tunability, output power, and mode distribution of second-harmonic generated light, as well as possibilities to increase the conversion efficiency via an optimization of a waveguides cross-sectional area, was systematically investigated. A maximum output power of 12.04 mW with a conversion efficiency of 10.29% at 605.6 nm was demonstrated in the wider waveguide with the cross-sectional area of 4  μm×4  μm.

Laser beams with conical refraction patterns

Laser beams with cone-refracted output from the plane mirror is demonstrated for the first time in lasers based on intracavity conical refraction (CR) phenomenon. Transverse profile of such lasers comprises a crescent ring of CR-like distribution, where any opposite points are of orthogonal linear polarizations. We confirm the existence of such mode of CR lasers by two observations. First, cascaded CR in reflection geometry has been demonstrated for first time and it provides experimental prove that a light beam passed along optic axis of a biaxial crystal, reflected back from a plane mirror and passed again through the crystal is restored. Second, CR cavity mode with CR-like pattern through the plane mirror is experimentally and theoretically demonstrated for the first time.

Efficient yellow-green light generation at 561 nm by frequency-doubling of a QD-FBG laser diode in a PPLN waveguide

A compact high-power yellow-green continuous wave (CW) laser source based on second-harmonic generation (SHG) in a 5% MgO doped periodically poled congruent lithium niobate (PPLN) waveguide crystal pumped by a quantum-dot fiber Bragg grating (QD-FBG) laser diode is demonstrated. A frequency-doubled power of 90.11 mW at the wavelength of 560.68 nm with a conversion efficiency of 52.4% is reported. To the best of our knowledge, this represents the highest output power and conversion efficiency achieved to date in this spectral region from a diode-pumped PPLN waveguide crystal, which could prove extremely valuable for the deployment of such a source in a wide range of biomedical applications.

Nonvanishing turn-on delay in quantum dot lasers

A turn-on of a quantum dot semiconductor laser is analyzed in detail both theoretically and experimentally. We show that quantum dot lasers have a nonlinear damping rate which strongly affects laser turn-on dynamics due to the non-instantaneous capture of carriers to a dot. It results in nonvanishing turn-on delay even at very high pumping in good agreement with experiment.

Second harmonic generation in a low-loss orientation-patterned GaAs waveguide

The technology of low-loss orientation-patterned gallium arsenide (OP-GaAs) waveguided crystals was developed and realized by reduction of diffraction scattering on the waveguide pattern. The propagation losses in the OP-GaAs waveguide were estimated to be as low as 2.1 dB/cm, thus demonstrating the efficient second harmonic generation at 1621 nm under an external pumping.

High power Bessel beams from EP-VECSELs

We report on demonstration of non-diffracting (Bessel) beams from Electrically Pumped Vertical External Cavity Surface Emitting Lasers (EP-VECSELs), with output powers ranging up to hundreds of milliwatts and central lobe diameters of 10-100 μm with propagation lengths up to few tens of centimeters. To our knowledge, this is the best result for Bessel beams generated from semiconductor light sources and is comparable to that achievable from vibronic lasers.

Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.