G. Sahu

Formation and growth of SnO2 nanoparticles in silica glass by Sn implantation and annealing

Nanocrystalline Sn particles have been formed in silica glass through 50 keV Sn− implantation followed by annealing in N2 at 650 °C for 30 min. Samples prepared this way have been annealed in air for 1 h, separately at four different temperatures, 400, 600, 800, and 1000 °C, each at a given temperature. Annealing at temperatures higher than 400 °C has been found to result in oxidation of the Sn nanoparticles (NPs) and formation of the SnO2 phase as confirmed from optical absorption (OA), transmission electron microscopy, and Raman scattering measurements. For the sample annealed at 600 °C, Raman scattering data showed three bands at about 525, 629, and 771 cm−1, the last two corresponding to the A1g and B2g classical Raman modes of rutile SnO2. Increase in annealing temperature resulted in an increase in the intensities of the A1g and B2g modes showing better crystallinity. Also, the A1g peak shifted toward a higher wave number with a steady decrease in the intensity at 525 cm−1. This is in line with the ...

Observation of a universal aggregation mechanism and a possible phase transition in Au sputtered by swift heavy ions.

Two exponents delta for the size distribution of n-atom clusters, Y(n) approximately n{-delta}, have been found in Au clusters sputtered from embedded Au nanoparticles under swift heavy ion irradiation. For small clusters, below 12.5 nm in size, delta has been found to be 3/2, which can be rationalized as occurring from a steady state aggregation process with size independent aggregation. For larger clusters, a delta value of 7/2 is suggested, which might come from a dynamical transition to another steady state where aggregation and evaporation rates are size dependent. In the present case, the observed decay exponents do not support any possibility of a thermodynamic liquid-gas-type phase transition taking place, resulting in cluster formation.

MeV Au irradiation induced nanoparticle formation and recrystallization in a low energy Au implanted Si layer

Au implantation at 32 keV into Si(100), in a fluence range of 1 x 10(15)-1 x 10(17) cm(-2), has been used to produce a gold-rich damaged Si layer of thickness around 30 nm. Local recrystallization of this layer, induced by 1.5 MeV Au irradiation, to a fluence of 1 x 10(15) cm(-2), has been studied using Raman scattering, photoluminescence (PL) and x-ray photoemission spectroscopy (XPS). For a sample with a low energy Au fluence of 5 x 10(15) cm(-2), the MeV Au irradiation has been found to result in Si nanocrystal (NC) formation. The size of the NCs, as estimated from the PL data, has been found to be about 4 nm, which agrees well with the result of a thermal spike model calculation. Annealing of the sample at 500 degrees C resulted in an enhanced PL signal, without any significant shift in peak position, indicating an increase in the local concentration of the NCs. In the case of samples with an initial Au fluence above 1 x 10(16) cm(-2), the MeV Au irradiation has been found to result in better overall recrystallization of the amorphous layer, with silicide formation as observed by XPS. However, there was no PL signal, indicating the absence of Si NCs in the system. The results suggest that the initial amorphizing Au fluence plays a crucial role in Si NC formation induced by MeV ion irradiation.

Effect of Au irradiation energy on ejection of ZnS nanoparticles from ZnS film

ZnS films deposited on Si have been irradiated with Au ions at 35 keV, 2, and 100 MeV. Sputtered particles, collected on catcher foils during irradiation, were analyzed using transmission electron microscopy. For the case of 35 keV Au irradiation, no nanoparticle (NP) could be observed on the catcher foil. However, NPs 2–7 nm in size, have been observed on the catcher foils for MeV irradiations at room temperature. For particle sizes ≥3 nm, the distributions could be fitted to power law decays with decay exponents varying between 2 and 3.5. At 2 MeV, after correction for cluster breakup effects, the decay exponent has been found to be close to 2, indicating shock waves induced ejection to be the dominant mechanism. The corrected decay exponent for the 100 MeV Au irradiation case has been found to be about 2.6. Coulomb explosion followed by thermal spike induced vaporization of ZnS seems to be the dominant mechanism regarding material removal at such high energy. In such a case the evaporated material can ...