G. Sattonnay

Phase transformations induced by high electronic excitation in ion-irradiated Gd2(ZrxTi1−x)2O7 pyrochlores

The pyrochlore oxides (A2B2O7) exhibit a remarkable range of structural, physical, and magnetic properties related to their various chemical compositions. This article reports the phase transformations induced by high electronic excitation in pyrochlores of the Gd2(ZrxTi1−x)2O7 family irradiated with swift ions. The structural changes, investigated by using several analytical techniques (x-ray diffraction, Raman spectroscopy, and transmission electron microscopy), strongly depend on the chemical composition. The high electronic excitation along the ion trajectory results in the amorphization of ion tracks for Gd2Ti2O7 and Gd2TiZrO7, whereas a defective fluorite structure is formed in Gd2Zr2O7. Moreover, the results underline the existence of an electronic stopping power threshold of 6 keV/nm for amorphizable compounds and 10 keV/nm for Gd2Zr2O7, below which phase transformations do not occur. Finally, the study of the thermal recovery of irradiated pyrochlores provides the recrystallization temperature fo...

Multistep damage evolution process in cubic zirconia irradiated with MeV ions

This work reports the study, via the combination of Rutherford backscattering spectrometry and channeling, x-ray diffraction, and transmission electron microscopy experiments, of the damage formation in cubic yttria-stabilized zirconia single crystals irradiated with medium-energy (4 MeV) heavy (Au) ions. The damage buildup, which is accounted for in the framework of the multistep damage accumulation model, occurs in three steps. The first step at low fluences (up to 1015 cm−2), characterized by a regular increase in both the damage yield and the elastic strain, is related to the formation of small defect clusters. The second step in the intermediate fluence range (from 1015 to 5×1015 cm−2) leads to a sharp increase in the damage yield and to a large drop of the strain due to the formation of dislocation loops which collapse into a network of tangled dislocations. The third step at high fluences (above 5×1015 cm−2) exhibits a surprising decrease in the damage yield, which may be attributed to the reorgani...

Damage induced by electronic excitation in ion-irradiated yttria-stabilized zirconia

This article presents a study of the damage production in yttria-stabilized cubic zirconia single crystals irradiated with swift heavy ions. The combination of techniques which probe the material at different spatial scales (Rutherford backscattering spectrometry in channeling geometry, x-ray diffraction, transmission electron microscopy, and atomic force microscopy) was used in order to gain information about the damage depth distribution, the disordering buildup, the nature of radiation defects, and the occurrence of microstructural modifications. The damage results from the formation of tracks, due to the huge electronic excitations induced in the wake of incident ions. The melting of the material in the core of tracks, via a thermal spike mechanism, leads to the creation of large hillocks at the surface of the crystals. The overlapping of ion tracks at high fluence (above similar to 10(12) cm(-2)) induces a severe transformation of the microstructure of the material. Nanodomains slightly disoriented from the main crystallographic direction are formed, with a size decreasing with increasing irradiation fluence. These results may be used to predict the damage evolution in other nonamorphizable ceramics irradiated with swift heavy ions.

Stress field induced by swift heavy ion irradiation in cubic yttria stabilized zirconia

X-ray diffraction (XRD) was used to investigate the damage and the correlated stress induced by the slowing down of swift heavy ions in cubic zirconia polycrystals doped with 10 mol % Y2O3. Samples were irradiated at room temperature with 940 MeV Pb ions at fluences ranging from 5×1011 to 4×1013 cm−2. Changes of XRD profiles were examined at increasing fluences. Residual macroscopic stresses induced by irradiation were determined using XRD by the “sin2 ψ method.” The state of stress in the irradiated layer was described by a combination of: (i) a hydrostatic stress caused by the formation of damaged tracks leading to swelling and (ii) a biaxial stress imposed by the bulk undamaged material, which controls the lateral expansion of the surface damaged layer. The evolution of the stress as a function of irradiation fluence was also determined: the intensity of the hydrostatic stress increases from 80 to 460 MPa when the fluence is increased from 5×1011 to 4×1013 cm−2 and that of the biaxial stress increases ...

Behaviour of helium in UO2 single crystals: a transmission electron microscopy investigation

UO2 single crystals implanted at room temperature with a few atomic per cent of He+ ions and subsequently annealed up to 750°C have been analysed by in-situ transmission electron microscopy (TEM). The TEM images reveal the formation of helium precipitates or blisters above 600°C, with a size increasing with increasing helium concentration. This threshold temperature is associated with helium detrapping from radiation-induced defects.

Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam

Single and dual-beam ion irradiations of silicon carbide (SiC) were performed to study possible Synergetic effects between Nuclear (Sn) and Electronic (Se) Energy Losses. Results obtained combining Rutherford backscattering in channeling conditions, Raman spectroscopy, and transmission electron microscopy techniques show that dual-beam irradiation of SiC induces a dramatic change in the final sample microstructure with a substantial decrease of radiation damage as compared to single-beam irradiation. Actually, a defective layer containing dislocations is formed upon dual-beam irradiation (Sn&Se), whereas single low-energy irradiation (Sn alone) or even sequential (Sn + Se) irradiations lead to full amorphization. The healing process is ascribed to the electronic excitation arising from the electronic energy loss of swift ions. These results shed new light on the long-standing puzzling problem of the existence of a possible synergy between Sn and Se in ion-irradiation experiments. This work is interesting ...

Role of temperature in the radiation stability of yttria stabilized zirconia under swift heavy ion irradiation: A study from the perspective of nuclear reactor applications

The search for materials that can withstand the harsh radiation environments of the nuclear industry has become an urgent challenge in the face of ever-increasing demands for nuclear energy. To this end, polycrystalline yttria stabilized zirconia (YSZ) pellets were irradiated with 80 MeV Ag6+ ions to investigate their radiation tolerance against fission fragments. To better simulate a nuclear reactor environment, the irradiations were carried out at the typical nuclear reactor temperature (850 °C). For comparison, irradiations were also performed at room temperature. Grazing incidence X-ray diffraction and Raman spectroscopy measurements reveal degradation in crystallinity for the room temperature irradiated samples. No bulk structural amorphization was however observed, whereas defect clusters were formed as indicated by transmission electron microscopy and supported by thermal spike simulation results. A significant reduction of the irradiation induced defects/damage, i.e., improvement in the radiation ...

Diffusion Study of Cerium and Gadolinium in Single- and Polycrystalline Yttria-Stabilized Zirconia

Yttria-stabilized zirconia (YSZ) ceramic is considered as an attractive matrix for nuclear applications, such as inert matrix for the destruction of excess plutonium or good host material for nuclear waste storage. Some actinide elements in high-level radioactive wastes can be simulated by cerium as tetravalent actinide, and gadolinium as trivalent actinide or neutron absorber. The present work is focused on the diffusion study of Ce and Gd in YSZ single crystal and high density polycrystals. A thin film of Ce or Gd was deposited either by spin-coating method or by physical vapour deposition on the surface of polished samples. The diffusion experiments were performed from 1173 to 1673 K under air. The Ce or Gd diffusion profiles were determined by secondary ion mass spectrometry. The experiments led to the determination of effective diffusion coefficient, Deff, bulk and grain boundary diffusion coefficients, DB and DGB. The dependence of these diffusion coefficients on temperature is described by means of Arrhenius equations and the diffusivity is compared with literature.

Deflection and Three Point Bending Tests in SEM: Mechanical Characteristics of Oxide Films

Two techniques allowing to determine mechanical characteristics of oxide films are presented. With the first one, the deflection/elongation, it is possible to study stresses developed in an oxide film during heating-cooling or isothermal treatments and oxide expansion coefficients. When results are compared to modeling, the behaviour laws for the oxide and the metal can be determined as well as the expansion coefficients and transformation phases can be detected. The second one concerns the 3-point bending tests and gives information on the toughness either of the oxide film or of the metal-oxide interfaces (or oxide-oxide interfaces). These two techniques are of prime importance for the estimation of the life time of high temperature materials.

Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes

The structural transformations induced in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6-9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm{sup -2}) than at high energy (0.05 ion nm{sup -2}), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm).