G. V. Astakhov

Silicon carbide light-emitting diode as a prospective room temperature source for single photons

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nat. Mater. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.

Binding energy of charged excitons in ZnSe-based quantum wells

Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

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Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

and positively

Surface State Charge Dynamics of a High-Mobility Three-Dimensional Topological Insulator

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Magnetization manipulation in (Ga,Mn)As by subpicosecond optical excitation

charged excitons are measured as functions of quantum well width, and free carrier density and in external magnetic fields up to 47 T. The binding energy of

Circular-to-Linear and Linear-to-Circular Conversion of Optical Polarization by Semiconductor Quantum Dots

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Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

29 \AA{}.