G. Vaschenko

Sub-38 nm resolution tabletop microscopy with 13 nm wavelength laser light

We have acquired images with a spatial resolution better than 38 nm by using a tabletop microscope that combines 13 nm wavelength light from a high-brightness tabletop laser and Fresnel zone plate optics. These results open a gateway to the development of compact and widely available extreme-ultraviolet imaging tools capable of inspecting samples in a variety of environments with a 15-20 nm spatial resolution and a picosecond time resolution.

Ablation of organic polymers by 46.9-nm-laser radiation

We report results of the exposure of poly(tetrafluoroethylene) -(PTFE), poly(methyl methacrylate) -(PMMA), and polyimide -(PI) to intense 46.9-nm-laser pulses of 1.2-ns-duration at fluences ranging from ∼0.1 to ∼10J∕cm2. The ablation rates were found to be similar for all three materials, ∼80–90nm∕pulse at 1J∕cm2. The results suggest that the ablation of organic polymers induced by intense extreme ultraviolet laser radiation differs from that corresponding to irradiation with longer wavelengths.

Nanoimaging with a compact extreme-ultraviolet laser

Images with a spatial resolution of 120-150 nm were obtained with 46.9 nm light from a compact capillary-discharge laser by use of the combination of a Sc-Si multilayer-coated Schwarzschild condenser and a free-standing imaging zone plate. The results are relevant to the development of compact extreme-ultraviolet laser-based imaging tools for nanoscience and nanotechnology.

LPP EUV source development for HVM

This paper provides a detailed review of development progress for a laser-produced-plasma (LPP) extreme-ultra-violet (EUV) source with performance goals targeted to meet joint requirements from all leading scanner manufacturers. We present the latest results on drive laser power and efficiency, source fuel, conversion efficiency, debris mitigation techniques, multi-layer-mirror coatings, collector efficiency, mass-limited droplet generation, laser-to-droplet targeting control, and system use and experience. The results from full-scale prototype systems are presented. In addition, several smaller lab-scale experimental systems have also been constructed to test specific physical aspects of the light sources. This report reviews the latest experimental results obtained on these systems with a focus on the topics most critical for a source intended for use in high volume manufacturing (HVM). LPP systems have been developed for light-sources applications to enable EUV scanners for optical imaging of circuit features at nodes of 32 nm and below on the international technology roadmap for semiconductors (ITRS). LPP systems have inherent advantages over alternate source types, such as discharge produced plasmas (DPP), with respect to power scalability, source etendue, collector efficiency, and component lifetime. The capability to scale EUV power with laser repetition rate and pulse energy is shown, as well as the modular architecture for extendability. In addition, experimental results of debris mitigation techniques and witness sample lifetime testing of coated multi-layer-mirrors (MLM) are described and used to support the useful lifetime estimation of a normal incidence collector. A roadmap to meet requirements for production scanners planned well into the next decade is also presented.

Nanometer-scale ablation with a table-top soft x-ray laser

Ablation of holes with diameters as small as 82 nm and very clean walls was obtained in poly(methyl methacrylate) focusing pulses from a Ne-like Ar 46.9 nm compact capillary-discharge laser with a freestanding Fresnel zone plate diffracting into third order. These results demonstrate the feasibility of using focused soft x-ray laser beams for the direct nanoscale patterning of materials and the development of new nanoprobes.

Nanopatterning with interferometric lithography using a compact /spl lambda/=46.9-nm laser

We report the imprinting of nanometer-scale gratings by interferometric lithography at /spl lambda/=46.9 nm using an Ne-like Ar capillary discharge laser. Gratings with periods as small as 55 nm were imprinted on poly-methyl methacrylate using a Lloyds mirror interferometer. This first demonstration of nanopatterning using an extreme ultraviolet (EUV) laser illustrates the potential of compact EUV lasers in nanotechnology applications.

Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells

We show that the emission characteristics of InGaN/GaN quantum wells under hydrostatic pressure are strongly influenced by the built-in piezoelectric field. The dominant role of the piezoelectric field is established from the dramatic increase of the photoluminescence decay time with pressure and the dependence of the linear pressure coefficient of the photoluminescence peak energy on Si doping in the barriers and excitation intensity. A nonlinear increase of the piezoelectric field with hydrostatic pressure determined from these experiments is explained as being due to a significant dependence of the InGaN piezoelectric constants with strain.

Reflection mode imaging with nanoscale resolution using a compact extreme ultraviolet laser

We report the demonstration of reflection mode imaging of 100 nm-scale features using 46.9 nm light from a compact capillary-discharge laser. Our imaging system employs a Sc/Si multilayer coated Schwarzschild condenser and a freestanding zone plate objective. The reported results advance the development of practical and readily available surface and nanostructure imaging tools based on the use of compact sources of extreme ultraviolet light.

LPP source system development for HVM

Laser produced plasma (LPP) systems have been developed as a viable approach for the EUV scanner light sources to support optical imaging of circuit features at sub-22nm nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. The status of first generation High Volume Manufacturing (HVM) sources in production and at a leading semiconductor device manufacturer is discussed. The EUV power at intermediate focus is discussed and the lastest data are presented. An electricity consumption model is described, and our current product roadmap is shown.

Laser produced plasma light source for EUVL

This paper is devoted to the development of laser produced plasma (LPP) EUV source architecture for advanced lithography applications in high volume manufacturing of integrated circuits. The paper describes the development status of subsystems most critical to the performance to meet scanner manufacturer requirements for power and debris mitigation. Spatial and temporal distributions of the radiation delivered to the illuminator of the scanner are important parameters of the production EUV tool, this paper reports on these parameters measured at the nominal repetition rate of the EUV source. The lifetime of the collector mirror is a critical parameter in the development of extreme ultra-violet LPP lithography sources. Deposition of target material and contaminants as well as sputtering and implantation of incident particles can reduce the reflectivity of the mirror coating substantially over time during exposure even though debris mitigation schemes are being employed. We report on progress of life-test experiments of exposed 1.6sr collectors using a Sn LPP EUV light source. The erosion of MLM coating is caused mostly by the high-energy ions generated from the plasma. In this manuscript the ion distribution measured at small (14 degree) and medium (45 degree) angles to the laser beam are presented. The measurements show that the chosen combination of the CO2 laser and Sn droplet targets is characterized by fairly uniform angular ion energy distribution. The maximum ion energy generated from the plasma is in the range of 3-3.5 keV for all incident angles of the collector. The measured maximum energy of the ions is significantly less than that measured and simulated for plasmas generated by short wavelength lasers (1 μm). The separation of ions with different charge states was observed when a retarding potential was applied to the Faraday Cup detector.