G. Weimann

A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5/spl times/3 mm/sup 2/ yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V/sub DS/=35V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology.

Large signal modeling of AlGaN/GaN HEMTs with P/sub sat/>4 W/mm at 30 GHz suitable for broadband power applications

Large signal modeling and investigations of an AlGaN/GaN HEMT processed on SiC with l/sub g/=150 nm are performed with respect to broadband amplifiers up to 30 GHz. Output power values of 3.4 W or 4.25 W/mm at 18 GHz and P/sub out/=1.6 W, equivalent to 4 W/mm at 30 GHz, are measured. The device modeling shows good agreement of the measured and modeled power sweeps at 10 GHz and 30 GHz. The large signal simulations show the suitability of AlGaN/GaN HEMTs for multi-band amplifiers in the K-band.

AlGaN/GaN HEMTs on SiC operating at 40 GHz

The operation of AlGaN/GaN HEMTs on SiC in the Ka-band is analyzed with respect to the achievable output power between 35 GHz and 40 GHz. 150 nm gate length AlGaN/GaN HEMTs are investigated by active load-pull measurements. Further, small-signal and noise analysis are performed with regard to the use at Ka-band and robust receiver applications.

Development of a 2″‐AlGaN/GaN HEMT technology on sapphire and SiC for mm‐wave high‐voltage power applications

The suitability of AlGaN/GaN HEMTs on SiC is discussed with respect to mm-wave applications at 40 GHz and beyond. A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology on SiC and sapphire was developed for high power applications and for frequencies beyond 30 GHz. Large periphery devices with 0.48 mm gate width show a cw output power of 0.86 W at 40 GHz. AlGaN/GaN dual-gate HEMTs show MSG/MAG of >13 dB at 60 GHz with 0.15 μm gate length.

An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power

This work describes the operation of AlGaN/GaN HEMTs on s.i. SiC substrate in a broadband AlGaN/GaN push-pull amplifier for 3G/4G infrastructure applications between between 1.8 GHz and 2.2 GHz. The device yields linear gain of 12.9 dB, a 3 dB bandwidth of 400 MHz between 1.8 GHz and 2.2 GHz, and a maximum output power of 102 W at 1.95 GHz under single carrier 16 channel W-CDMA conditions. Linearity evaluation further yields a peak output power of 45 dBm for an ACLR of -45 dBc at 5 MHz offset at 1.95 GHz