G. Zizka

The ATLAS Silicon Pixel Sensors

Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.

A measurement of Lorentz angle and spatial resolution of radiation hard silicon pixel sensors

Silicon pixel sensors developed by the ATLAS collaboration to meet LHC requirements and to withstand hadronic irradiation to fluences of up to

Electrical characteristics of silicon pixel detectors

10^{15} n_eq/cm^{2}

A 16 × 16 pixel array detector for protein crystallography

have been evaluated using a test beam facility at CERN providing a magnetic field. The Lorentz angle was measured and found to alter from 9.0 deg. before irradiation, when the detectors operated at 150 V bias at B=1.48 T, to 3.1 deg after irradiation and operating at 600 V bias at 1.01 T. In addition to the effect due to magnetic field variation, this change is explained by the variation of the electric field inside the detectors arising from the different bias conditions. The depletion depths of irradiated sensors at various bias voltages were also measured. At 600 V bias 280 micron thick sensors depleted to ~200 micron after irradiation at the design fluence of 1 10^{15} 1 MeV n_eq/cm2 and were almost fully depleted at a fluence of 0.5 * 10^{15} 1 MeV n_eq/cm2. The spatial resolution was measured for angles of incidence between 0 deg and 30 deg. The optimal value was found to be better than 5.3 micron before irradiation and 7.4 micron after irradiation.

Performance, radiation damage, and future plans of the BABAR silicon vertex tracker

Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

Status and future plans of the BABAR silicon vertex tracker

Abstract A 2D pixel array detector prototype is being designed for static and time resolved protein crystallography. This pixel detector will significantly enhance time resolved laue protein crystallography by two or three orders of magnitude compared to existing sensors such as films or phosphor screens coupled to CCDs. The resolution in time and dynamic range of this type of detector will allow to study structural changes that occur within the protein as a function of time (concurrent readout and acquisition). The prototype consists of an array of 16 × 16 pixels of 150 × 150 μ m 2 size. The individual pixel processor consists of a low-noise amplifier shaper followed by a differential threshold comparator which provides the counting of individual photons with energies above a programmable threshold. To accommodate the very high rates, above 5 × 10 8 /cm 2 /s, each pixel processor has a 3 bit pre-scaler which divides the event rate by 8. Overflow from the divider which defines a pseudo fourth bit will generate a readout sequence providing the pixel address. Addresses, generated locally as quantified analog signals, will be used to increment a location in an histogramming memory from which the computerized image of the Laue diagram will be generated.

Lessons learned from BaBar silicon vertex tracker, limits and future perspectives of the detector

The BABAR silicon vertex tracker (SVT) has been in operation for four years at the PEP-II electron-positron storage ring. During this time the SVT modules have accumulated a radiation dose up to 2 Mrad. We study the degradation in the performance of the SVT due to this accumulated dose which is highly non uniform across the device and also within the individual silicon detectors. To extrapolate the performance of the device to the future we study separately the effect of the irradiation on silicon detectors, front end integrated circuits and on a complete detector module under controlled radiation conditions, using a /sup 60/Co source and a 0.9 GeV e/sup -/ beam. We compare the results to the data from the SVT. In particular we show the dependence of the charge collection efficiency on the radiation dose even when a small stripe of the module is irradiated up to space charge sign inversion. Since the modules that are located in the plane of the beams will suffer significant radiation damage, we will describe our plans for their replacement in 2005 and for the operation of the SVT through the lifetime of the BABAR experiment.

Radiation hardness and monitoring of the BaBar vertex tracker

Abstract A brief summary of the design goals, description, and performance of the BABAR Silicon Vertex Tracker is given. Results from radiation hardness tests are discussed, which indicate satisfactory operation up to 5 Mrad of accumulated radiation. The local alignment procedure has made significant improvements recently, and four readout sections were recovered during the BABAR shutdown in 2002.

Radiation damage studies for the BaBar Silicon Vertex Tracker

The silicon vertex tracker (SVT) of the BaBar experiment at PEP-II is described. This is the crucial device for the measurement of the B meson decay vertices to extract CP-asymmetries. It consists of five layers of double-sided AC-coupled silicon strip detectors, read out by a full-custom integrated circuit, capable of simultaneous acquisition, digitization and transmission of data. It represents the core of the BaBar tracking system, providing position measurements with a precision of 10 /spl mu/m (inner layers) and 30/spl mu/m (outer layers). The relevant performances of the SVT are presented, and the experience acquired during the construction, installation and the first five years of data-taking is described. Innovative solutions are highlighted, like the sophisticated alignment procedure, imposed by the design of the silicon tracker, integrated in the beam-line elements and mechanically separated from the other parts of BaBar. The harshness of the background conditions in the interaction region required several studies on the radiation damage of the sensors and the front-end chips, whose results are presented. Over the next five years the luminosity is predicted to increase by a factor three, leading to radiation and occupancy levels significantly exceeding the detector design. Extrapolation of future radiation doses and occupancies is shown together with the expected detector performance and lifetime. Upgrade scenarios to deal with the increased luminosity and backgrounds are discussed.