Gan Feng

Molecular-beam epitaxy and characteristics of GaNyAs1-x-yBix

GaNyAs1−x−yBix alloys were grown by molecular-beam epitaxy using solid Ga, Bi, and As sources and nitrogen radicals generated from nitrogen gas in rf plasma. Changing the growth temperature is found to be a convenient method for controlling the GaBi molar fraction in the alloy reproducibly. The photoluminescence (PL) spectra show that the PL peak energy of GaNyAs1−x−yBix alloy decreased with increasing GaBi and GaN molar fractions. The redshift coefficients of ∼62meV∕%Bi and ∼130meV∕%N at the PL peak energy of GaNyAs1−x−yBix were observed at room temperature. The temperature dependence of the PL peak energy in the temperature range of 150–300K is much smaller than the temperature dependence of the band gap of InGaAsP. The temperature coefficients of GaAs1−xBix and GaNyAs1−x−yBix band gaps are governed by the GaBi molar fraction and they decrease with increasing GaBi molar fraction. GaNyAs1−x−yBix alloys with different PL peak energies and lattice matched to GaAs substrates were obtained. The photoluminesc...

New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy

A new Bi-containing III–V semiconductor InGaAsBi alloy was firstly grown by molecular beam epitaxy (MBE). The high crystalline quality of the InGaAsBi epilayer with smooth interfaces was confirmed by X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites.

Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy

We have investigated the effect of postgrowth thermal annealing on undoped GaN0.014As0.954Bi0.032/GaAs structures grown by molecular-beam epitaxy. For the as-grown GaN0.014As0.954Bi0.032 film, the room-temperature photoluminescence (PL) spectrum shows poor emission efficiency. The PL intensity can be markedly improved by postgrowth annealing. The optimal annealing temperature is found to be ~700 °C. A blueshift of the PL peak during annealing was also observed in annealed GaN0.014As0.954Bi0.032 with a maximum value of ~27 meV. On the basis of high-resolution X-ray diffraction measurements, the mechanism for the blueshift of the GaN0.014As0.954Bi0.032 PL peak during annealing was studied.

Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes

Temperature-insensitive wavelength electroluminescent emission and absorption characteristics are obtained from GaN<inf>y</inf>As<inf>1-x-y</inf>Bi<inf>x</inf>/GaAs double-heterostructure diodes. The temperature dependence of the EL peak wavelength and the absorption edge is 0.09 nm / K and 0.2 meV / K, respectively.

Influence of Mn incorporation on MBE growth of (In,Mn)N

Abstract(In,Mn)N has been grown onc-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The dependence of Mn incorporation on the growth conditions was studied in situ by reflection high-energy electron diffraction and ex situ by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. It was found that the growth temperature significantly affected the Mn replacement in In sites. The optimized growth temperature was about 280°C. Mn incorporation was also affected by the (In+Mn)/N ratio and the Mn/(In+Mn) flux ratio. N-rich growth conditions were found to be favored for Mn incorporation and replacement in the In sites.