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Dive into the research topics where Gary W. Jones is active.

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Featured researches published by Gary W. Jones.


SID Symposium Digest of Technical Papers | 2004

29.4L: Late-News Paper: Dual Doped High Tg White Organic Light Emitting Devices on Silicon

Tariq A. Ali; Gary W. Jones; Webster E. Howard

We report the fabrication of efficient surface-emitting white organic light emitting diodes (OLEDs) on single crystal silicon substrates using a high Tg blue host layer with co-deposited blue-green and red-orange emitter dopant molecules. The emission layer is sandwiched between a Spiro-TAD hole transport layer and an Alq3 electron transport layer. The devices operate near the 1931 CIE white balance point with luminous efficiencies of 2.75 lum/W and current efficiencies of 8 cd/A, representing luminance of ∼1600 cd/m2 at a current density of 20 mA/cm2. When tested under accelerated and uninterrupted 90% pulsed 20 mA/cm2 drive, our OLEDs yield luminance half-lives of over 5000 hours, which represent normalized half life at 100 cd/m2 for color microdisplays of greater than 20,000 hours assuming a 25% duty cycle similar to that created by full motion video. These results enable us to meet commercial and military requirements for OLED color microdisplays employing passband filters for red, green and blue subpixel elements.


SID Symposium Digest of Technical Papers | 2007

59.2: High Performance Top Emitting OLED Devices

Tariq A. Ali; Ilyas Khayrullin; Fridrich Vazan; Scott A. Ziesmer; Olivier Prache; Gary W. Jones; Amalkumar P. Ghosh

High performance top-emitting full color organic light-emitting diode (OLED) micro-displays were developed using a highly reflective anode patterned over active matrix single crystal silicon. Dual emission layer white OLED devices were fabricated using high Tg materials with typical efficiencies ∼ 10 cd/A and CIE x and y coordinates of 0.32 and 0.34 respectively. Stable color coordinates over a wide range of video grey levels were obtained from white using color filters. Room temperature operating luminance half-life at 20 mA/cm2 exceeds 6,000 hrs (>25,000 hrs in video mode). The optical characteristics of the devices were simulated using a full vector field calculation.


Proceedings of SPIE, the International Society for Optical Engineering | 2006

Organic light-emitting diode microdisplays: an essential technology with compelling advantages

Gary W. Jones; Susan K. Jones; Rob Sainsbury; Bruce Westcoat; Joseph Runde

Organic light-emitting diode (OLED) display technology has been developing rapidly. A review of near-eye applications indicates its utility and efficiency, especially in comparison to legacy technologies. Next-generation designs now feature improved performance (significantly increased luminance and lifetime), further underscoring the utility of this display technology for consumer, military and industrial applications. Consumer applications include electronic gaming and personal entertainment. Military and industrial applications include situational awareness, thermal imaging, and simulation & training. Recent development activity is already leading to new opportunities for technological advances supporting a broader range of applications.


Applied Physics Letters | 2005

Thin film encapsulation of organic light emitting diode devices

Amalkumar P. Ghosh; Gary W. Jones; Webster E. Howard


Archive | 1998

Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer

Gary W. Jones; Webster E. Howard


Archive | 1998

Sealing structure for organic light emitting devices

Gary W. Jones; Webster E. Howard; Steven M. Zimmerman


Archive | 1994

Vertical microelectronic field emission devices

Gary W. Jones; Ching-Tzong Sune


Archive | 1996

Laser interferometric lithographic system providing automatic change of fringe spacing

Amalkumar P. Ghosh; Susan K. Jones; Gary W. Jones; Steven M. Zimmerman; Yachin Liu


Archive | 1990

Self-aligned electron emitter fabrication method and devices formed thereby

Gary W. Jones


Archive | 1999

High aspect ratio gated emitter structure, and method of making

Gary W. Jones; Steven M. Zimmerman

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