Geng Chao

Experimental demonstration of single-mode fiber coupling using adaptive fiber coupler

Coupling plane wave into a single-mode fiber (SMF) with high and steady coupling efficiency is crucial for fiber-based free-space laser systems, where random angular jitters are the main influencing factors of fiber coupling. In this paper, we verified a new adaptive-optic device named adaptive fiber coupler (AFC) which could compensate angular jitters and improve the SMF coupling efficiency in some degree. Experiments of SMF coupling under the angular jitter situation using AFC have been achieved. Stochastic parallel gradient descent (SPGD) algorithm is employed as the control strategy, of which the iteration rate is 625 Hz. In closed loop, the coupling efficiency keeps above 65% when angular errors are below 80 mu rad. The compensation bandwidth is 35 Hz at sine-jitter of 15 mu rad amplitude with average coupling efficiency of above 60%. Also, experiments with simulated turbulence have been studied. The average coupling efficiency increases from 31.97% in open loop to 61.33% in closed loop, and mean square error (MSE) of coupling efficiency drops from 7.43% to 1.75%.

Coherent beam combination of adaptive fiber laser array with tilt-tip and phase-locking control

We present an experimental study on tilt-tip (TT) and phase-locking (PL) control in a coherent beam combination (CBC) system of adaptive fiber laser array. The TT control is performed using the adaptive fiber-optics collimator (AFOC), and the PL control is realized by the phase modulator (PM). Cascaded and simultaneous controls of TT and PL using stochastic parallel gradient descent (SPGD) algorithm are investigated in this paper. Two-fiber-laser-, four-fiber-laser-, and six-fiber-laser-arrays are employed to study the TT and PL control. In the cascaded control system, only one high-speed CMOS camera is used to collect beam data and a computer is used as the controller. In a simultaneous control system one high-speed CMOS camera and one photonic detector (PD) are employed, and a computer and a control circuit based on field programmable gate array (FPGA) are used as the controllers. Experimental results reveal that both cascaded and simultaneous controls of TT using AFOC and PL using PM in fiber laser array are feasible and effective. Cascaded control is more effective in static control situation and simultaneous control can be applied to the dynamic control system directly The control signals of simultaneous PL and TT disturb each other obviously and TT and PL control may compete with each other, so the control effect is limited.

Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.

Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 209Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis (MUFPSA). In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that (i) with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; (ii) due to the higher ion relative velocity and longer range of δ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.

Impact of temperature on single event upset measurement by heavy ions in SRAM devices

The temperature dependence of single event upset (SEU) measurement both in commercial bulk and silicon on insulator (SOI) static random access memories (SRAMs) has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou (HIRFL). For commercial bulk SRAM, the SEU cross section measured by 12C ions is very sensitive to the temperature. The temperature test of SEU in SOI SRAM was conducted by 209Bi and 12C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for 12C ions but keep constant for 209Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed.

Wavefront sensing based on fiber coupling of the fiber laser array

A new method of wavefront sensing based on fiber coupling in the fiber laser array has been proposed. The scheme and the recovery process of this sensor are introduced. Numerical simulations of detecting the turbulence-induced aberrations utilizing such method and experiments of recovering static aberrations with 7-element adaptive fiber optics collimator (AFOC) array are presented. Numerical results show that such sensor could effectively recover the wavefront with turbulence-induced aberrations. For hexagonal array with different units, the optimum reconstructed Zernike mode is also different. Smaller array filled factor leads to larger recovery residual error. Compared with array filled factor of 1.0, value of 0.8 is easy to obtain and brings in recovery residual error increment less than 10%. Experimental results reveal that RMS less than 0.075 μm of the recovery residual error is obtained when detecting the static aberration with 7-element AFOC array with filled factor of 0.875. The aberration is with RMS of 0.433 μm and mainly includes Zernike modes of low orders like defocus. Results here validate the effectiveness of the wavefront sensing method proposed here. Such method would get further application in systems like laser array propagating and turbulence aberrations correcting.

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset (SEU) effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of 209Bi have a wider distribution of energy deposition than 132Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer (LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

Modeling the applicability of linear energy transfer on single event upset occurrence

Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.