Gennady Logvenov

High-Temperature Superconductivity in a Single Copper-Oxygen Plane

Superconductivity Sliced Thin Since the initial characterization of high-temperature cuprate superconductors, an intriguing challenge has been determining the minimum number of copper oxide planes needed to support the superconducting state. The observation of superconductivity at interfaces of metallic oxides and insulators provides a route to addressing this question. Logvenov et al. (p. 699) describe a method for layer-by-layer synthesis of alternating oxides of metal and insulators based on La and Cu. Layers three unit cells thick supported superconductivity with a transition temperature of 32 kelvin. When selected layers were then doped with Zn atoms to suppress superconductivity, the interface superconductivity was shown to arise from a single copper-oxide plane. Interfaces of oxide metals and insulators confine a superconducting state to one copper oxide plane. The question of how thin cuprate layers can be while still retaining high-temperature superconductivity (HTS) has been challenging to address, in part because experimental studies require the synthesis of near-perfect ultrathin HTS layers and ways to profile the superconducting properties such as the critical temperature and the superfluid density across interfaces with atomic resolution. We used atomic-layer molecular beam epitaxy to synthesize bilayers of a cuprate metal (La1.65Sr0.45CuO4) and a cuprate insulator (La2CuO4) in which each layer is just three unit cells thick. We selectively doped layers with isovalent Zn atoms, which suppress superconductivity and act as markers, to show that this interface HTS occurs within a single CuO2 plane. This approach may also be useful in fabricating HTS devices.

Anomalous independence of interface superconductivity from carrier density

The recent discovery of superconductivity at the interface of two non-superconducting materials has received much attention. In cuprate bilayers, the critical temperature (Tc) can be significantly enhanced compared with single-phase samples. Several explanations have been proposed, invoking Sr interdiffusion, accumulation and depletion of mobile charge carriers, elongation of the copper-to-apical-oxygen bond length, or a beneficial crosstalk between a material with a high pairing energy and another with a large phase stiffness. From each of these models, one would predict Tc to depend strongly on the carrier density in the constituent materials. Here, we study combinatorial libraries of La(2-x)Sr(x)CuO4-La2CuO4 bilayer samples--an unprecedentedly large set of more than 800 different compositions. The doping level x spans a wide range, 0.15 < x < 0.47, and the measured Hall coefficient varies by one order of magnitude. Nevertheless, across the entire sample set, Tc stays essentially constant at about 40u2009K. We infer that doping up to the optimum level does not shift the chemical potential, unlike in ordinary Fermi liquids. This result poses a new challenge to theory--cuprate superconductors have not run out of surprises.

Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

Dopant size effects on novel functionalities: High-temperature interfacial superconductivity

Among the range of complex interactions, especially at the interfaces of epitaxial oxide systems, contributing to the occurrence of intriguing effects, a predominant role is played by the local structural parameters. In this study, oxide molecular beam epitaxy grown lanthanum cuprate-based bilayers (consisting of a metallic (M) and an insulating phase (I)), in which high-temperature superconductivity arises as a consequence of interface effects, are considered. With the aim of assessing the role of the dopant size on local crystal structure and chemistry, and on the interface functionalities, different dopants (Ca2+, Sr2+ and, Ba2+) are employed in the M-phase, and the M–I bilayers are investigated by complementary techniques, including spherical-aberration-corrected scanning transmission electron microscopy. A series of exciting outcomes are found: (i) the average out-of-plane lattice parameter of the bilayers is linearly dependent on the dopant ion size, (ii) each dopant redistributes at the interface with a characteristic diffusion length, and (iii) the superconductivity properties are highly dependent on the dopant of choice. Hence, this study highlights the profound impact of the dopant size and related interface chemistry on the functionalities of superconducting oxide systems.

Pulsed laser deposition for the synthesis of monolayer WSe2

Atomically thin films of WSe2 from one monolayer up to 8 layers were deposited on an Al2O3 r-cut ( 11¯02) substrate using a hybrid-Pulsed Laser Deposition (PLD) system where a laser ablation of pure W is combined with a flux of Se. Specular X-ray reflectivities of films were analysed and were consistent with the expected thickness. Raman measurement and atomic force microscopy confirmed the formation of a WSe2 monolayer and its spatial homogeneity over the substrate. Grazing-incidence X-ray diffraction uncovered an in-plane texture in which WSe2 [ 101¯0] preferentially aligned with Al2O3 [ 112¯0]. These results present a potential to create 2D transition metal dichalcogenides by PLD, where the growth kinetics can be steered in contrast to common growth techniques like chemical vapor deposition and molecular beam epitaxy.

Selective formation of apical oxygen vacancies in La2−xSrxCuO4

The superconducting properties of high-tc materials are functions of carriers concentration, which is controlled by the concentration of defects including heterovalent cations, interstitial oxygen ions, and oxygen vacancies. Here we combine low-temperature thermal treatment of La

Growth technology and characteristics of thin strontium iridate films and iridate–cuprate superconductor heterostructures

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Transfer of Magnetic Order and Anisotropy through Epitaxial Integration of 3d and 4f Spin Systems

Sr

Madelung Strain in Cuprate Superconductors – A Route to Enhancement of the Critical Temperature

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Phase constitution, Sr distribution and morphology of self-assembled La-Sr-Co-O composite films prepared by PLD

CuO