George Argos | Researchain

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Archive | 1992

Structure and fabrication of high transconductance MOS field effect transistor using a buffer layer/ferroelectric/buffer layer stack as the gate dielectric

George Argos; Thottam S. Kalkur

Archive | 1996

Partially or completely encapsulated top electrode of a ferroelectric capacitor

Thomas A. Evans; George Argos

Archive | 1994

Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like

George Argos; John D. Spano; Steven D. Traynor

Archive | 1995

Passivation method and structure using hard ceramic materials or the like

George Argos; John D. Spano; Steven D. Traynor

Archive | 2000

Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor

Thomas A. Evans; George Argos

Archive | 1991

Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices

George Argos; Thottam S. Kalkur

Archive | 1997

Dual-level metalization method for integrated circuit ferroelectric devices

George Argos; Tatsuya Yamazaki

Archive | 1999

Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion

Stanley Perino; Sanjay Mitra; George Argos; Holli Harper

Archive | 1996

Completely encapsulated top electrode of a ferroelectric capacitor

Thomas A. Evans; George Argos

Archive | 1994

Passivation method for a ferroelectric integrated circuit using hard ceramic materials

George Argos; John D. Spano; Steven D. Traynor

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