George Bajor

C. Davis; George Bajor; J. Butler; T. Crandell; J. Delgado; T. Jung; Y. Khajeh-Noori; B. Lomenick; V. Milam; H. Nicolay; S. Richmond; T. Rivoli

A complementary silicon bipolar process has been developed for high-performance analog applications. The process features high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz, respectively. The transistors have a double polysilicon, self-aligned structure which is isolated by using bonded wafer silicon-on-insulator (SOI) technology and vertical trenches. The circuit components are interconnected with two levels of metallization. The UHF-1 process has been used to create several advanced analog high-frequency integrated circuits in a monolithic form.<<ETX>>

Rex Lowther; Patrick A. Begley; George Bajor; Anthony L. Rivoli; W.R. Eisenstadt

In high-frequency semiconductor applications, substrate effects can be a dominant source of parasitics unless they are carefully minimized. Here a dual-resistivity substrate in a bonded-oxide process is considered for the optimization of the two major types of substrate parasitics: resistive substrate losses and capacitive coupling (crosstalk) through the substrate. These will both depend on the frequency, the two substrate resistivities, and the thickness of the two substrate layers. The thickness of the upper layer is treated as a fully designable parameter. The mechanisms are evaluated numerically, but intuitive rule-of-thumb arguments are also provided for a good understanding of the physics and of the tradeoffs in selecting an optimal design. The results of these sections may also serve as a guide for determining standard substrate resistivities.

George Bajor; Anthony L. Rivoli

Christopher K. Davis; George Bajor; James D. Beasom; Thomas L. Crandell; Taewon Jung; Anthony L. Rivoli

George Bajor; Joseph S. Raby

Jose Avelino Delgado; George Bajor

George Bajor

Patrick A. Begley; Donald F. Hemmenway; George Bajor; Anthony L. Rivoli; Jeanne M. McNamara; Michael Sean Carmody; Dustin A. Woodbury

George Bajor

Donald F. Hemmenway; Jose Avelino Delgado; John D. Butler; Anthony L. Rivoli; Michael David Church; George V. Rouse; Lawrence G. Pearce; George Bajor