George Ke Lun Wong

Highly monodisperse polymer-capped ZnO nanoparticles: Preparation and optical properties

We report the preparation of highly monodisperse ZnO nanoparticles using poly(vinyl pyrrolidone) (PVP) as the capping molecules. The surface-modified ZnO nanoparticles were found to be remarkably stable. The optical absorption shows distinct excitonic features. Markedly enhanced near-band-edge ultraviolet photoluminescence and significantly reduced defect-related green emission were also observed. We attribute this observation to the nearly perfect surface passivation of the ZnO nanoparticles by the PVP molecules. The third-order nonlinear optical response of these PVP-capped ZnO nanoparticles in a dilute solution was found to be significantly larger (by at least two orders of magnitude) than that of the bulk ZnO.

Large third-order optical nonlinearity in Au:SiO2 composite films near the percolation threshold

Very large third-order optical nonlinearity, χ(3)∼2.5×10−6 esu, measured by a degenerate four wave mixing method using a short pulse (70 picosecond) laser, has been found in the rapid-thermal annealed Au:SiO2 composite films at concentrations below the Au percolation threshold. The dependence of the χ(3) on Au concentration, p, follows a cubic power law. The maximum figure of merit, χ(3)/α (with α being the absorption coefficient) is about 10−11 esu cm. We explain this result as due to local field enhancement arising from the Mie resonance of the Au nanoclusters, with strong interaction between the nanoclusters further promoting the effect.

Optical storage with electromagnetically induced transparency in a dense cold atomic ensemble

We experimentally investigate optical storage with electromagnetically induced transparency in a dense cold (85)Rb atomic ensemble. By varying the optical depth (OD) from 0 to 140, we observe that the optimal storage efficiency has a saturation value of 50% as OD>50. Our result is consistent with that obtained from hot vapor cell experiments.

Optimal storage and retrieval of single-photon waveforms

We report an experimental demonstration of optimal storage and retrieval of heralded single-photon wave packets using electromagnetically induced transparency (EIT) in cold atoms at a high optical depth. We obtain an optimal storage efficiency of (49 ± 3)% for single-photon waveforms with a temporal likeness of 96%. Our result brings the EIT quantum light-matter interface closer to practical quantum information applications.

A dark-line two-dimensional magneto-optical trap of 85Rb atoms with high optical depth

We describe the apparatus of a dark-line two-dimensional (2D) magneto-optical trap (MOT) of (85)Rb cold atoms with high optical depth (OD). Different from the conventional configuration, two (of three) pairs of trapping laser beams in our 2D MOT setup do not follow the symmetry axes of the quadrupole magnetic field: they are aligned with 45° angles to the longitudinal axis. Two orthogonal repumping laser beams have a dark-line volume in the longitudinal axis at their cross over. With a total trapping laser power of 40 mW and repumping laser power of 18 mW, we obtain an atomic OD up to 160 in an electromagnetically induced transparency (EIT) scheme, which corresponds to an atomic-density-length product NL = 2.05 × 10(15) m(-2). In a closed two-state system, the OD can become as large as more than 600. Our 2D MOT configuration allows full optical access of the atoms in its longitudinal direction without interfering with the trapping and repumping laser beams spatially. Moreover, the zero magnetic field along the longitudinal axis allows the cold atoms maintain a long ground-state coherence time without switching off the MOT magnetic field, which makes it possible to operate the MOT at a high repetition rate and a high duty cycle. Our 2D MOT is ideal for atomic-ensemble-based quantum optics applications, such as EIT, entangled photon pair generation, optical quantum memory, and quantum information processing.

Rocksalt MgS solar blind ultra-violet detectors

Studies using in-situ Auger electron spectroscopy and reflection high energy electron diffraction, and ex-situ high resolution X-ray diffraction and electron backscatter diffraction reveal that a MgS thin film grown directly on a GaAs (100) substrate by molecular beam epitaxy adopts its most stable phase, the rocksalt structure, with a lattice constant of 5.20 A. A Au/MgS/n+-GaAs (100) Schottky-barrier photodiode was fabricated and its room temperature photoresponse was measured to have a sharp fall-off edge at 235 nm with rejection of more than three orders at 400 nm and higher than five orders at 500 nm, promising for various solar-blind UV detection applications.

Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission.

MBE-Grown Fe Magnetic Quantum Dots in ZnS Matrix

A multilayer magnetic quantum dot sample containing 5 layers of Fe quantum dots (QDs) embedded in six layers of ZnS spacer was grown by molecular beam epitaxy (MBE). High-resolution transmission electron microscopy (HRTEM) observations reveal that the Fe QDs are single crystalline with spherical shape of diameters around 3 to 4 nm and area density of 1.5times1012 cm-2. Its zero-field cooled (ZFC) and field cooled (FC) curves measured at low field (100 Oe) show the magnetic relaxation effect with a blocking temperature around 26 K. The hysteresis loop measured at 5 K shows a coercivity of 83 Oe, confirming the slow relaxation process and coercivity enhancement attributed to the nanoparticle nature of the sample

Transmission Electron Microscopy Study of Room Temperature Lasing Epitaxial ZnO Films on Sapphire

We have studied the microstructures of lasing and non-lasing ZnO films on sapphire in plan-view and cross-section by transmission electron microscopy (TEM). While ZnO films in general are made up of cloumnar close-packed c-axis misoriented nanocrystals, the misorientation in nonlasing film, typically 5°, is considerably larger than lasing film, typically less than 1°. A rather high density of pinholes or nanotubes is associated with the highly misoriented films. The misorientation between adjacent grains is taken up by grain boundary dislocations. Room temperature lasing films contain a high density of threading boundary edge dislocations, in excess of 10 10 cm −2 . But faceting in the columnar nanocrystals is not well developed so that the grain boundaries are not clearly visible. Tilting of (0001) lattice planes between grains originating from substrate surface step and growth fault step, however, has been observed in high resolution electron microscopy (HREM) images.

Deep electron states in n-type Al-doped ZnS1−xTex grown by molecular beam epitaxy

Capacitance–voltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1−xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the PL spectra obtained from Al-doped ZnS0.977Te0.023 is lower than that of undoped ZnS0.977Te0.023, indicating that some of the Al atoms form nonradiative deep traps. Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1−xTex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as Te composition increases. Our results show that only a small fraction of Al atoms forms nonradiative deep defects, in...