Georgios Priniotakis

Optimization of cylindrical textile organic field effect transistors using TCAD simulation tool

We used a commercial TCAD tool in order to simulate a cylindrical Textile Organic Field Effect Transistor (TOFET) and study the impact of different critical region sizes in its electrical characteristics. The simulation was based on models and parameters similar to those of previous simulations in Organic Thin Film Transistors. We have seen that it is potentially feasible to build transistors which can operate in low voltages by using typical materials. Even if some of the selected typical materials have to be replaced by others more suitable for practical use in the textile industry, the simulation is a good starting point for estimating the device typical operation and parameters. By optimizing critical region sizes of the device we conclude that the device should have an active layer thickness below 100 nm, channel length around 10 mu m and gate oxide thickness as small as possible (300 nm or less), in order to have optimum transistor performance.

From the organic thin film transistor to the 3-D textile organic cylindrical transistors – perspectives, expectations and predictions

In this paper we examine the possibility to simulate and study the behaviour of a fiber-based Textile Transistor in a commercial TCAD system. We also examine the capability of such transistors to operate in sufficiently low voltages, aiming to the potential realization of low-voltage wearable textiles in the future. We have seen that it is potentially feasible to build transistors which can operate in low voltages by using typical materials. Even if some of the selected typical materials have to be replaced by others more suitable for practical use in the textile industry, the simulation is a good starting point for estimating the device typical operation and parameters.