Geunsik Lee

Unusual infrared-absorption mechanism in thermally reduced graphene oxide

Infrared absorption of atomic and molecular vibrations in solids can be affected by electronic contributions through non-adiabatic interactions, such as the Fano effect. Typically, the infrared-absorption lineshapes are modified, or infrared-forbidden modes are detectable as a modulation of the electronic absorption. In contrast to such known phenomena, we report here the observation of a giant-infrared-absorption band in reduced graphene oxide, arising from the coupling of electronic states to the asymmetric stretch mode of a yet-unreported structure, consisting of oxygen atoms aggregated at the edges of defects. Free electrons are induced by the displacement of the oxygen atoms, leading to a strong infrared absorption that is in phase with the phonon mode. This new phenomenon is only possible when all other oxygen-containing chemical species, including hydroxyl, carboxyl, epoxide and ketonic functional groups, are removed from the region adjacent to the edges, that is, clean graphene patches are present.

The Role of Intercalated Water in Multilayered Graphene Oxide

A detailed in situ infrared spectroscopy analysis of single layer and multilayered graphene oxide (GO) thin films reveals that the normalized infrared absorption in the carbonyl region is substantially higher in multilayered GO upon mild annealing. These results highlight the fact that the reduction chemistry of multilayered GO is dramatically different from the single layer GO due to the presence of water molecules confined in the ∼1 nm spacing between sheets. IR spectroscopy, XPS analysis, and DFT calculations all confirm that the water molecules play a significant role interacting with basal plane etch holes through passivation, via evolution of CO(2) leading to the formation of ketone and ester carbonyl groups. Displacement of water from intersheet spacing with alcohol significantly changes the chemistry of carbonyl formation with temperature.

First-principles study of metal-graphene interfaces

Metal-graphene contact is a key interface in graphene-based device applications, and it is known that two types of interfaces are formed between metal and graphene. In this paper, we apply first-principles calculations to twelve metal-graphene interfaces and investigate the detailed interface atomic and electronic structures of physisorption and chemisorption interfaces. For physisorption interfaces (Ag, Al, Cu, Cd, Ir, Pt, and Au), Fermi level pinning and Pauli-exclusion-induced energy-level shifts are shown to be two primary factors determining graphene’s doping types and densities. For chemisorption interfaces (Ni, Co, Ru, Pd, and Ti), the combination of Pauli-exclusion-induced energy-level shifts and hybridized states’ repulsive interactions lead to a band gap opening with metallic gap states. For practical applications, we show that external electric field can be used to modulate graphene’s energy-levels and the corresponding control of doping or energy range of hybridization.

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer.

Anisotropic Dirac fermions in a Bi square net of SrMnBi2.

We report the observation of highly anisotropic Dirac fermions in a Bi square net of SrMnBi(2), based on a first-principles calculation, angle-resolved photoemission spectroscopy, and quantum oscillations for high-quality single crystals. We found that the Dirac dispersion is generally induced in the (SrBi)(+) layer containing a double-sized Bi square net. In contrast to the commonly observed isotropic Dirac cone, the Dirac cone in SrMnBi(2) is highly anisotropic with a large momentum-dependent disparity of Fermi velocities of ~8. These findings demonstrate that a Bi square net, a common building block of various layered pnictides, provides a new platform that hosts highly anisotropic Dirac fermions.

First-principles study of GaAs(001)- β2 (2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

The interactions of oxygen atoms on the GaAs(001)-β2(2×4) surface and the passivation of oxidized GaAs(001)-β2(2×4) surface were studied by density functional theory. The results indicate that oxygen atoms adsorbed at back-bond sites satisfy the bond saturation conditions and do not induce surface gap states. However, due to the oxygen replacement of an As dimer atom at a trough site or row site, the As–As bond is broken, and gap states are produced leading to the Fermi level pinning because of unsaturated As dangling bonds. Atomic H, Cl, S, F, and the molecular species GaO were examined to passivate the unsaturated As dangling bond. The results show that H, Cl, F, and GaO can remove such gap states. It is also found that the interaction of S with the unsaturated As dangling bond does not remove the gap states, and new gap states are generated upon single S adsorption. A higher S coverage forms S–S dimer pairs which passivate two unsaturated As atoms, and removes the As-induced gap states.

Isotope effect on the thermal conductivity of graphene

The thermal conductivity (TC) of isolated graphene with different concentrations of isotope (C13) is studied with equilibrium molecular dynamics method at 300 K. In the limit of pure C12 or C13 graphene, TC of graphene in zigzag and armchair directions are ∼630 W/mK and ∼1000W/mK, respectively. We find that the TC of graphene can be maximally reduced by ~80%, in both armchair and zigzag directions, when a random distribution of C12 and C13 is assumed at different doping concentrations. Therefore, our simulation results suggest an effective way to tune the TC of graphene without changing its atomic and electronic structure, thus yielding a promising application for nanoelectronics and thermoelectricity of graphene-based nano device.

Density functional theory based study of molecular interactions, recognition, engineering, and quantum transport in π molecular systems.

CONSPECTUS: In chemical and biological systems, various interactions that govern the chemical and physical properties of molecules, assembling phenomena, and electronic transport properties compete and control the microscopic structure of materials. The well-controlled manipulation of each component can allow researchers to design receptors or sensors, new molecular architectures, structures with novel morphology, and functional molecules or devices. In this Account, we describe the structures and electronic and spintronic properties of π-molecular systems that are important for controlling the architecture of a variety of carbon-based systems. Although DFT is an important tool for describing molecular interactions, the inability of DFT to accurately represent dispersion interactions has made it difficult to properly describe π-interactions. However, the recently developed dispersion corrections for DFT have allowed us to include these dispersion interactions cost-effectively. We have investigated noncovalent interactions of various π-systems including aromatic-π, aliphatic-π, and non-π systems based on dispersion-corrected DFT (DFT-D). In addition, we have addressed the validity of DFT-D compared with the complete basis set (CBS) limit values of coupled cluster theory with single, double, and perturbative triple excitations [CCSD(T)] and Møller-Plesset second order perturbation theory (MP2). The DFT-D methods are still unable to predict the correct ordering in binding energies within the benzene dimer and the cyclohexane dimer. Nevertheless, the overall DFT-D predicted binding energies are in reasonable agreement with the CCSD(T) results. In most cases, results using the B97-D3 method closely reproduce the CCSD(T) results with the optimized energy-fitting parameters. On the other hand, vdW-DF2 and PBE0-TS methods estimate the dispersion energies from the calculated electron density. In these approximations, the interaction energies around the equilibrium point are reasonably close to the CCSD(T) results but sometimes slightly deviate from them because interaction energies were not particularly optimized with parameters. Nevertheless, because the electron cloud deforms when neighboring atoms/ions induce an electric field, both vdW-DF2 and PBE0-TS seem to properly reproduce the resulting change of dispersion interaction. Thus, improvements are needed in both vdW-DF2 and PBE0-TS to better describe the interaction energies, while the B97-D3 method could benefit from the incorporation of polarization-driven energy changes that show highly anisotropic behavior. Although the current DFT-D methods need further improvement, DFT-D is very useful for computer-aided molecular design. We have used these newly developed DFT-D methods to calculate the interactions between graphene and DNA nucleobases. Using DFT-D, we describe the design of molecular receptors of π-systems, graphene based electronic devices, metalloporphyrin half-metal based spintronic devices as graphene nanoribbon (GNR) analogs, and graphene based molecular electronic devices for DNA sequencing. DFT-D has also helped us understand quantum phenomena in materials and devices of π-systems including graphene.

Two Dimensional Molecular Electronics Spectroscopy for Molecular Fingerprinting, DNA Sequencing, and Cancerous DNA Recognition

Laser-driven molecular spectroscopy of low spatial resolution is widely used, while electronic current-driven molecular spectroscopy of atomic scale resolution has been limited because currents provide only minimal information. However, electron transmission of a graphene nanoribbon on which a molecule is adsorbed shows molecular fingerprints of Fano resonances, i.e., characteristic features of frontier orbitals and conformations of physisorbed molecules. Utilizing these resonance profiles, here we demonstrate two-dimensional molecular electronics spectroscopy (2D MES). The differential conductance with respect to bias and gate voltages not only distinguishes different types of nucleobases for DNA sequencing but also recognizes methylated nucleobases which could be related to cancerous cell growth. This 2D MES could open an exciting field to recognize single molecule signatures at atomic resolution. The advantages of the 2D MES over the one-dimensional (1D) current analysis can be comparable to those of 2D NMR over 1D NMR analysis.

Substrate-induced solvent intercalation for stable graphene doping.

Here, we report a substrate-induced intercalation phenomenon of an organic solvent at the interface between monolayer graphene and a target substrate. A simple dipping of the transferred chemical vapor deposition (CVD)-grown graphene on the SiO₂ substrate into chloroform (CHCl₃, CF), a common organic solvent, induces a spontaneous formation of CF clusters beneath the basal plane of the graphene as well as inside the wrinkles. The microscopic and spectroscopic observations showed the doping behavior of monolayer graphene, which indicates the adsorption of CF to monolayer graphene. Interestingly, the intercalated organic solvent showed remarkable stability for over 40 days under ambient conditions. To reveal the underlying mechanism of the stable solvent intercalation, desorption energy of CF molecules at the graphene/substrate interface was measured using Arrhenius plots of the conductance change upon time and temperature. Two stages of solvent intercalations with high desorption energies (70 and 370 meV) were observed along with the consecutive shrinkage of the solvent clusters at the basal plane and the wrinkles, respectively. Moreover, the theoretical calculation based on density functional theory (DFT) also shows the strong intercalation energy of CF between monolayer graphene and the SiO₂ substrate, which results from the stabilization of the graphene-SiO₂ interactions. Furthermore, the thermal response of the conductance could be utilized to maintain a certain degree of p-doping of monolayer graphene, which provides the facile, sustainable, and controllable large-area doping method of graphene for future generation of printed flexible electronics.