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Featured researches published by Ghassan E. Jabbour.


Advanced Materials | 2010

Inkjet printing-process and its applications.

Madhusudan Singh; Hanna M. Haverinen; Parul Dhagat; Ghassan E. Jabbour

In this Progress Report we provide an update on recent developments in inkjet printing technology and its applications, which include organic thin-film transistors, light-emitting diodes, solar cells, conductive structures, memory devices, sensors, and biological/pharmaceutical tasks. Various classes of materials and device types are in turn examined and an opinion is offered about the nature of the progress that has been achieved.


Applied Physics Letters | 2001

Fabrication of bulk heterojunction plastic solar cells by screen printing

Sean E. Shaheen; Rachel Radspinner; N. Peyghambarian; Ghassan E. Jabbour

We demonstrate the use of screen printing in the fabrication of ultrasmooth organic-based solar cells. Organic films on the order of several tens of nanometers in thickness and 2.6 nm surface roughness were made. The first-generation screen-printed plastic solar cells demonstrated 4.3% in power conversion efficiency when using an aluminum electrode and 488 nm illumination.


Applied Physics Letters | 1997

Highly efficient and bright organic electroluminescent devices with an aluminum cathode

Ghassan E. Jabbour; Y. Kawabe; Sean E. Shaheen; Jiafu Wang; Michael M. Morrell; Bernard Kippelen; N. Peyghambarian

The electron injection process, which limits the electroluminescent performance of organic devices, has been enhanced tremendously by inserting a layer of LiF with appropriate thickness between the cathode and a quinacridone doped organic layer. Devices with an Al/LiF cathode demonstrated a luminance in excess of 20 000 cd/m2 and an external quantum efficiency of 3%, which is comparable to devices with a Mg/LiF cathode. These devices show maximum luminance of 45 000 cd/m2 prior to failure in continuous bias operation. For the same LiF thickness, the operating voltage for devices with Al/LiF was lower than the corresponding operating voltage for devices with Mg/LiF or Mg alone. Tunneling theory is used to explain this enhancement.


Applied Physics Letters | 1998

Aluminum based cathode structure for enhanced electron injection in electroluminescent organic devices

Ghassan E. Jabbour; Bernard Kippelen; Neal R. Armstrong; N. Peyghambarian

Cathodes made with Al–LiF or Al–CsF composites are found to greatly enhance the performance of organic light-emitting devices (OLEDs). With a composite cathode, devices based on an organic bilayer structure have shown lower operating voltage, higher efficiency, and better forward light output than devices with LiF/Al, Mg, or Al cathode. Unlike devices with an Al and Li alloy cathode, OLEDs with a composite cathode can be made with good reproducibility.


Journal of Applied Physics | 1998

Bright blue organic light-emitting diode with improved color purity using a LiF/Al cathode

Sean E. Shaheen; Ghassan E. Jabbour; Michael M. Morrell; Y. Kawabe; Bernard Kippelen; N. Peyghambarian; M. F. Nabor; R. Schlaf; Eugene A. Mash; Neal R. Armstrong

We report a two-layer, blue organic light-emitting diode with a 4,4′-bis(2,2-diphenylvinyl)-1,1′-biphenyl emission layer and a LiF/Al cathode which has an external quantum efficiency of 1.4% and a maximum luminance of 3000 cd/m2. Insertion of the thin LiF layer results in a 50-fold increase in the device efficiency compared to a device with an aluminum only cathode, and eliminates the need for an electron-transporting layer, such as tris(8-hydroxyquinoline)aluminum. This results in a device with excellent color purity with an emission peak at 476 nm and a full width at half maximum of 78 nm. Using ultraviolet photoelectron spectroscopy, we find that the effective work-function of aluminum decreases dramatically with sub-monolayer amounts of LiF deposited on the surface.


Applied Physics Letters | 1997

PbS quantum-dot doped glasses as saturable absorbers for mode locking of a Cr: forsterite laser

P. T. Guerreiro; S. Ten; Nicholas F. Borrelli; J. Butty; Ghassan E. Jabbour; N. Peyghambarian

Quantum confined nanocrystals of PbS in glass were used as intracavity saturable absorbers to obtain passive continuous-wave mode locking in a Cr:forsterite laser. We obtained near transformed-limited 4.6 ps laser pulses at 110 MHz repetition rate, and a wide tunability range of 1207–1307 nm. The absorption saturation intensity of the quantum-dot PbS doped glasses was measured to be 0.2 MW/cm2.


Applied Physics Letters | 2009

Inkjet printing of light emitting quantum dots

Hanna M. Haverinen; R. Myllylä; Ghassan E. Jabbour

We demonstrate the fabrication of diodes having inkjet printed light emitting quantum dots layer. Close packing of printed layer is shown to be influenced by surface morphology of the underlying polymer layer and size variance of quantum dots used. We extend our approach to printing quantum dots onto a quarter video graphics array substrate (76 800 monochrome pixels). The purity of emitted electroluminescent spectra of resulting devices is related to coverage integrity of printed layer, which in turn is shown to be affected by the number of printed drops per pixel.


Journal of Applied Physics | 1998

Photoemission spectroscopy of LiF coated Al and Pt electrodes

R. Schlaf; B. A. Parkinson; Paul A. Lee; Kenneth W. Nebesny; Ghassan E. Jabbour; Bernard Kippelen; N. Peyghambarian; Neal R. Armstrong

Thin lithium fluoride (LiF) interlayers between the low work function electrode and the electron transport layer in organic light emitting diodes (OLED) result in improved device performance. We investigated the electronic structure of LiF coated Al and Pt electrodes by x-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). Thin LiF films were grown in several steps onto Ar+ sputtered Al and Pt foils. After each growth step the surfaces were characterized in situ by XPS and UPS measurements. After evaluating band bending, work function and valence band offset for both samples, their band lineups were determined. Our measurements indicate that despite the insulating character of LiF in both samples, band bending is present in the LiF layer. The difference in band bending between the samples allows the conclusion that the driving force for the development of the band bending results from the contact potential between the metal and the LiF overlayer. The band bending is most...


Applied Physics Letters | 2006

Organic light-emitting diodes having exclusive near-infrared electrophosphorescence

Evan L. Williams; Jian Li; Ghassan E. Jabbour

Near-infrared (NIR) emission is demonstrated from phosphorescent organic light-emitting diodes containing blends of polymeric host and heavy metal complex, iridium(III) bis(1-pyrenyl-isoquinolinato-N,C′) acetylacetonate. The devices exhibit exclusive NIR emission with a peak value at 720nm. Forward light output exceeds 100μW∕cm2, and the external quantum efficiency is nearly 0.1%. These values are shown to increase upon using a hole blocking layer in the device architecture.


Advanced Materials | 2013

Self-assembled, nanowire network electrodes for depleted bulk heterojunction solar cells.

Xinzheng Lan; Jing Bai; Silvia Masala; Susanna M. Thon; Yuan Ren; Illan J. Kramer; Sjoerd Hoogland; Arash Simchi; Ghada I. Koleilat; Daniel Paz-Soldan; Zhijun Ning; André J. Labelle; Jin Young Kim; Ghassan E. Jabbour; Edward H. Sargent

Herein, a solution-processed, bottom-up-fabricated, nanowire network electrode is developed. This electrode features a ZnO template which is converted into locally connected, infiltratable, TiO2 nanowires. This new electrode is used to build a depleted bulk heterojunction solar cell employing hybrid-passivated colloidal quantum dots. The new electrode allows the application of a thicker, and thus more light-absorbing, colloidal quantum dot active layer, from which charge extraction of an efficiency comparable to that obtained from a thinner, planar device could be obtained.

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Bernard Kippelen

Georgia Institute of Technology

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Sean E. Shaheen

University of Colorado Boulder

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Jian Li

Arizona State University

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