Gholamreza Ardeshir
Babol Noshirvani University of Technology
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Gholamreza Ardeshir.
IEICE Electronics Express | 2011
Mohammad Gholami; Gholamreza Ardeshir; Hojat Ghonoodi
New architecture for a DLL based frequency multiplier for wireless transceivers presents in this paper. This architecture has the advantages of occupying low area, low power, low voltage and low phase noise. Also good stability can be obtained in this design. This structure also can be used for generating big multiples of reference frequency. The proposed circuit can operate at a substantially low supply voltage. The circuit level and system level designs are presented. Also power consumption trade-offs are reported. Simulation results confirm the analytical predictions. The proposed DLL-based frequency multiplier is implemented in a 0.13um CMOS Technology.
International Journal of Circuit Theory and Applications | 2015
Mohammad Gholami; Hamid Rahimpour; Gholamreza Ardeshir; Hossein Miar-Naimi
Lock time and convergence time are the most important challenges in delay-locked loops DLLs. In this paper we cover French very high frequency band with a novel all-digital fast-lock DLL-based frequency synthesizer. Because this new architecture uses a digital signal processing unit instead of using phase frequency detector, charge pump, and loop filter in conventional DLL, therefore, it shows better jitter performance, lock time, and convergence speed than previous related works. Optimization methods are used to make input and output signals of the proposed DLL in phase. The proposed architecture is designed to cover all channels of French very high frequency band by choosing number of delay cells in signal path. Simulation has been done for 22-27 delay cells, and fREF=16MHz, which can produce output frequency in range of 176-216MHz. Locking time is approximately 0.3µs, which is equal to five clock cycles of reference clock. All of the simulation results show superiority of the proposed structure. Copyright
Iet Circuits Devices & Systems | 2014
Mohammad Gholami; Hamid Rahimpour; Gholamreza Ardeshir; Hossein Miar-Naimi
In this study, the authors cover French very high frequency (VHF) band with a novel all-digital fast lock delayed looked loop (DLL)-based frequency synthesiser. Since this new architecture uses a digital signal processing unit instead of phase-frequency detector, charge pump and loop filter in conventional DLL therefore it shows better jitter performance, locktime and convergence speed. To obtain in-phase input and output signals in DLLs, optimisation methods are used in the proposed architecture. The proposed architecture is designed to cover channels of French VHF band by choosing number of delay cells in signal path. Simulation has been done for 22–27 delay cells and f REF = 16 MHz which can produce output frequency in range of 176–216 MHz. Locking time is approximately 0.5 μs which is equal to 8 clock cycles of reference clock. All of simulation results show superiority of the proposed structure.
IEEE Transactions on Very Large Scale Integration Systems | 2014
Mohammad Gholami; Gholamreza Ardeshir
In this paper, delay-locked loops (DLLs) jitter due to uncertainties in the phase frequency detector (PFD) is calculated. First, time-domain equations of the DLL are introduced. These equations are the key to obtaining a closed-form equation related to the jitter of DLL in presence of a noisy PFD. Jitter equations at the output of all stages are calculated theoretically. A DLL is designed in 0.18-μm CMOS technology to validate the obtained equations.
IEEE Transactions on Circuits and Systems Ii-express Briefs | 2017
Reza Bostani; Gholamreza Ardeshir; Hossein Miar-Naimi
In this brief, a cross-coupled oscillator is analyzed based on the two-port network theory and the
International Journal of Electronics | 2018
Sepideh Valiollahi; Gholamreza Ardeshir
Y
Circuits Systems and Signal Processing | 2014
Mohammad Gholami; Yasser Baleghi; Gholamreza Ardeshir
- parameter model for a transistor. Contrary to the previous works, the proposed analysis shows that LC cross-coupled oscillators have an additional and higher pure imaginary natural frequency at which the circuit cannot oscillate. The analysis investigates the sufficient condition at which the circuit is able to oscillate at this higher frequency. For the oscillation at the higher frequency mode, we propose adding an extra stage and making a three-stage ring oscillator. The equations obtained from this analysis indicate that the oscillation start-up condition depends on the oscillation frequency. Hence, increasing the speed of the oscillator does not satisfy the start-up condition of oscillators. Our analysis shows that the maximum frequency, in which the circuit stops oscillation in the ring oscillator, is higher than the cross-coupled oscillator and this maximum frequency is very close to the maximum frequency of the transistor.
Circuits Systems and Signal Processing | 2013
Mohammad Gholami; Gholamreza Ardeshir
ABSTRACT Differential cascoded voltage switch logic (DCVSL) cells are among the best candidates of circuit designers for a wide range of applications due to advantages such as low input capacitance, high switching speed, small area and noise-immunity; nevertheless, a proper model has not yet been developed to analyse them. This paper analyses deep submicron DCVSL cells based on a flexible accuracy-simplicity trade-off including the following key features: (1) the model is capable of producing closed-form expressions with an acceptable accuracy; (2) model equations can be solved numerically to offer higher accuracy; (3) the short-circuit currents occurring in high-low/low-high transitions are accounted in analysis and (4) the changes in the operating modes of transistors during transitions together with an efficient submicron I-V model, which incorporates the most important non-ideal short-channel effects, are considered. The accuracy of the proposed model is validated in IBM 0.13 µm CMOS technology through comparisons with the accurate physically based BSIM3 model. The maximum error caused by analytical solutions is below 10%, while this amount is below 7% for numerical solutions.
Analog Integrated Circuits and Signal Processing | 2014
Hamid Rahimpour; Mohammad Gholami; Hossein Miar-Naimi; Gholamreza Ardeshir
This paper presents a novel fully testable and diagnosable structure for phase-frequency detectors. All procedures of converting the conventional PFD to the fully testable one are reported step by step. Also, the probability-based testability of proposed architecture is calculated. In addition, area considerations related to new fully testable PFD are introduced completely. At last, the proposed structure is designed in both system level and circuit level. The results of fully testable PFD in 0.13-μm CMOS technology are shown. Simulation results confirm the theoretical analysis.
International Journal of Engineering | 2014
Mohammad Gholami; Gholamreza Ardeshir