Gilles Lerondel

Wavelength-scale stationary-wave integrated Fourier-transform spectrometry

Spectrometry is a general physical-analysis approach for investigating light-matter interactions. However, the complex designs of existing spectrometers render them resistant to simplification and miniaturization, both of which are vital for applications in micro- and nanotechnology and which are now undergoing intensive research. Stationary-wave integrated Fourier-transform spectrometry (SWIFTS)-an approach based on direct intensity detection of a standing wave resulting from either reflection (as in the principle of colour photography by Gabriel Lippmann) or counterpropagative interference phenomenon-is expected to be able to overcome this drawback. Here, we present a SWIFTS-based spectrometer relying on an original optical near-field detection method in which optical nanoprobes are used to sample directly the evanescent standing wave in the waveguide. Combined with integrated optics, we report a way of reducing the volume of the spectrometer to a few hundreds of cubic wavelengths. This is the first attempt, using SWIFTS, to produce a very small integrated one-dimensional spectrometer suitable for applications where microspectrometers are essential.

Efficient Directional Coupling between Silicon and Copper Plasmonic Nanoslot Waveguides: toward Metal−Oxide−Silicon Nanophotonics

Coupling plasmonics and silicon photonics is the best way to bridge the size gap between macroscopic optics and nanodevices in general and especially nanoelectronic devices. We report on the realization of key blocks for future plasmonic planar integrated optics, nano-optical couplers, and nanoslot waveguides that are compatible both with the silicon photonics and the CMOS microelectronics. Copper-based devices provide for very efficient optical coupling, unexpectedly low propagation losses and a broadband sub-50 nm optical confinement. The fabrication in a standard frontline microelectronic facilities hints broad possibilities of hybrid opto-electronic very large scale integration.

Short Range Plasmon Resonators Probed by Photoemission Electron Microscopy

Short range surface plasmon resonators are investigated at the nanometer scale. Gold nanorods (30 nm in diameter) were microfabricated and probed by photoemission electron microscopy under direct laser light excitation. Resonances presenting various numbers of lobes occur for specific rod lengths. A simple analytical model shows that the successive resonant lengths differ by a multiple of one-half of the wavelength of the supported short-range surface plasmon polariton.

All-silicon omnidirectional mirrors based on one-dimensional photonic crystals

We report on the fabrication of monolithic omnidirectional mirrors based on one-dimensional photonic crystals. The mirrors are comprised of chirped and unchirped multiple layers of microporous silicon. Porosities have been chosen to achieve an optimal low refractive index nL∼1.5 and a high refractive index nH∼2.55. Unchirped structures, centered in the near-infrared, exhibit an omnidirectional reflection band of 100 nm, in agreement with the calculated photonic band structure. Chirped structures exhibit an enlarged omnidirectional stop band (340 nm). Given the possibility of easily tailoring the optical thickness of porous silicon, this material is shown to be very practical for engineering omnidirectional mirrors.

Implementation of PT symmetric devices using plasmonics: principle and applications

The so-called PT symmetric devices, which feature ε((-x)) = ε((x))* associated with parity-time symmetry, incorporate both gain and loss and can present a singular eigenvalue behaviour around a critical transition point. The scheme, typically based on co-directional coupled waveguides, is here transposed to the case of variable gain on one arm with fixed losses on the other arm. In this configuration, the scheme exploits the full potential of plasmonics by making a beneficial use of their losses to attain a critical regime that makes switching possible with much lowered gain excursions. Practical implementations are discussed based on existing attempts to elaborate coupled waveguide in plasmonics, and based also on the recently proposed hybrid plasmonics waveguide structure with a small low-index gap, the PIROW (Plasmonic Inverse-Rib Optical Waveguide).

Apertureless near-field optical microscopy: A study of the local tip field enhancement using photosensitive azobenzene-containing films

The local optical field enhancement which can occur at the end of a nanometer-size metallic tip has given rise to both increasing interest and numerous theoretical works on near-field optical microscopy. In this article we report direct experimental observation of this effect and present an extensive study of the parameters involved. Our approach consists in making a “snapshot” of the spatial distribution of the optical intensity in the vicinity of the probe end using photosensitive azobenzene-containing films. This distribution is coded by optically induced surface topography which is characterized in situ by atomic force microscopy using the same probe. We perform an extensive analysis of the influence of several experimental parameters. The results are analyzed as a function of the illumination parameters (features of the incident laser beam, exposure time, illumination geometry) as well as the average tip-to-sample distance and tip geometry. The results obtained provide substantial information about t...

Temperature effect on the roughness of the formation interface of p-type porous silicon

We have studied the influence of the anodization temperature on the formation of porous Si for different current intensities. We have monitored the porosity, growth rate, luminescence, refractive index, and porous Si/bulk Si interface roughness. A strong decrease of the roughness was obtained for low temperature anodization. These results were used to fabricate distributed Bragg reflectors with a remarkable optical quality (Rmax=99.5%) for low doped p-type silicon.

Apertureless scanning near-field optical microscopy: a comparison between homodyne and heterodyne approaches

In coherent homodyne apertureless scanning near-field optical microscopy (ASNOM) the background field cannot be fully suppressed because of the interference between the different collected fields, making the images difficult to interpret. We show that implementing the heterodyne version of ASNOM allows one to overcome this issue. We present a comparison between homodyne and heterodyne ASNOM through near-field analysis of gold nanowells, integrated waveguides, and a single evanescent wave generated by total internal reflection. The heterodyne approach allows for the control of the interferometric effect with the background light. In particular, the undesirable background is shown to be replaced by a controlled reference field. As a result, near-field information undetectable by a homodyne ASNOM is extracted by use of the heterodyne approach. Additionally, it is shown that field amplitude and field phase can be detected separately.

Optimization of SERS-active substrates for near-field Raman spectroscopy

As a first step towards near-field Raman, we chose to study surface enhanced Raman scattering (SERS)-active substrates to cope with the weakness of Raman scattering (small cross-section and low concentration). We concentrated our work on localized surface plasmon (LSP) since they turned out to play a great part in SERS and we put forward the relation between LSP resonance and Raman enhancement. Roughness of our samples is controlled either by annealing process or electron-beam lithography (EBL); this latter technique proved to best suit to our study. Substrates are characterized by extinction spectroscopy which determines the LSP resonance and then Raman spectrum of a probe molecule, trans-1,2-bis(4-pyridyl)ethylene (BPE) is recorded. We show that maximum of enhancement is obtained when the LSP resonance is red-shifted (50 nm) compared to the excitation laser line (632.8 nm).

Roughness of the porous silicon dissolution interface

We present a study of the fluctuations in the dissolution front observed during the formation of porous silicon, leading finally to layer thickness inhomogeneities. Two types of fluctuations were revealed, one at the millimeter scale (waviness) and the other one at the micrometer scale (roughness). Root mean square amplitudes are comparable. In both cases fluctuations of the dissolution velocity can be invoked and we discuss their dependence on the current density and viscosity of the solution. The large scale fluctuations are attributed to planar resistivity fluctuations in the wafer. The second type of fluctuation displays a typical spatial periodicity comparable to the wavelength of the light so that a statistical characterization can be performed by optical measurements. The Davies–Bennett model quantitatively describes the induced light scattering. Remarkably, these fluctuations increase linearly with the layer thickness up to a critical value where a saturation regime is observed. In order to explai...