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Dive into the research topics where Goki Eda is active.

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Featured researches published by Goki Eda.


Nature Chemistry | 2013

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

Manish Chhowalla; Hyeon Suk Shin; Goki Eda; Lain-Jong Li; Kian Ping Loh; Hua Zhang

Ultrathin two-dimensional nanosheets of layered transition metal dichalcogenides (TMDs) are fundamentally and technologically intriguing. In contrast to the graphene sheet, they are chemically versatile. Mono- or few-layered TMDs - obtained either through exfoliation of bulk materials or bottom-up syntheses - are direct-gap semiconductors whose bandgap energy, as well as carrier type (n- or p-type), varies between compounds depending on their composition, structure and dimensionality. In this Review, we describe how the tunable electronic structure of TMDs makes them attractive for a variety of applications. They have been investigated as chemically active electrocatalysts for hydrogen evolution and hydrosulfurization, as well as electrically active materials in opto-electronics. Their morphologies and properties are also useful for energy storage applications such as electrodes for Li-ion batteries and supercapacitors.


Nature Nanotechnology | 2008

Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material

Goki Eda; Giovanni Fanchini; Manish Chhowalla

The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.


Nature Chemistry | 2010

Graphene oxide as a chemically tunable platform for optical applications

Kian Ping Loh; Qiaoliang Bao; Goki Eda; Manish Chhowalla

Chemically derived graphene oxide (GO) is an atomically thin sheet of graphite that has traditionally served as a precursor for graphene, but is increasingly attracting chemists for its own characteristics. It is covalently decorated with oxygen-containing functional groups - either on the basal plane or at the edges - so that it contains a mixture of sp(2)- and sp(3)-hybridized carbon atoms. In particular, manipulation of the size, shape and relative fraction of the sp(2)-hybridized domains of GO by reduction chemistry provides opportunities for tailoring its optoelectronic properties. For example, as-synthesized GO is insulating but controlled deoxidation leads to an electrically and optically active material that is transparent and conducting. Furthermore, in contrast to pure graphene, GO is fluorescent over a broad range of wavelengths, owing to its heterogeneous electronic structure. In this Review, we highlight the recent advances in optical properties of chemically derived GO, as well as new physical and biological applications.


Nano Letters | 2011

Photoluminescence from Chemically Exfoliated MoS2

Goki Eda; Hisato Yamaguchi; Damien Voiry; Takeshi Fujita; Mingwei Chen; Manish Chhowalla

A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.


Advanced Materials | 2010

Chemically Derived Graphene Oxide: Towards Large‐Area Thin‐Film Electronics and Optoelectronics

Goki Eda; Manish Chhowalla

Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.


Advanced Materials | 2010

Blue photoluminescence from chemically derived graphene oxide.

Goki Eda; Yun-Yue Lin; Cecilia Mattevi; Hisato Yamaguchi; Hsin‐An Chen; I-Sheng Chen; Chun-Wei Chen; Manish Chhowalla

Blue photoluminescence from chemically derived graphene oxide Goki Eda, Yun-Yue Lin, Cecilia Mattevi, Hisato Yamaguchi, Hsin-An Chen, I-Sheng Chen, Chun-Wei Chen, and Manish Chhowalla 1 Department of Materials, Imperial College, Exhibition Road, London SW7 2AZ, UK. 2 Department of Materials Science and Engineering, Rutgers University 607 Taylor Road, Piscataway, NJ 08854, USA. 3 Department of Materials Science and Engineering, National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan.


Nature Materials | 2013

Enhanced catalytic activity in strained chemically exfoliated WS2 nanosheets for hydrogen evolution

Damien Voiry; Hisato Yamaguchi; Junwen Li; Rafael Silva; Diego C. B. Alves; Takeshi Fujita; Mingwei Chen; Tewodros Asefa; Vivek B. Shenoy; Goki Eda; Manish Chhowalla

Efficient evolution of hydrogen through electrocatalysis at low overpotentials holds tremendous promise for clean energy. Hydrogen evolution can be easily achieved by electrolysis at large potentials that can be lowered with expensive platinum-based catalysts. Replacement of Pt with inexpensive, earth-abundant electrocatalysts would be significantly beneficial for clean and efficient hydrogen evolution. To this end, promising results have been reported using 2H (trigonal prismatic) XS₂ (where X  =  Mo or W) nanoparticles with a high concentration of metallic edges. The key challenges for XS₂ are increasing the number and catalytic activity of active sites. Here we report monolayered nanosheets of chemically exfoliated WS₂ as efficient catalysts for hydrogen evolution with very low overpotentials. Analyses indicate that the enhanced electrocatalytic activity of WS₂ is associated with the high concentration of the strained metallic 1T (octahedral) phase in the as-exfoliated nanosheets. Our results suggest that chemically exfoliated WS₂ nanosheets are interesting catalysts for hydrogen evolution.


Nano Letters | 2013

Conducting MoS2 Nanosheets as Catalysts for Hydrogen Evolution Reaction

Damien Voiry; Maryam Salehi; Rafael Silva; Takeshi Fujita; Mingwei Chen; Tewodros Asefa; Vivek B. Shenoy; Goki Eda; Manish Chhowalla

We report chemically exfoliated MoS2 nanosheets with a very high concentration of metallic 1T phase using a solvent free intercalation method. After removing the excess of negative charges from the surface of the nanosheets, highly conducting 1T phase MoS2 nanosheets exhibit excellent catalytic activity toward the evolution of hydrogen with a notably low Tafel slope of 40 mV/dec. By partially oxidizing MoS2, we found that the activity of 2H MoS2 is significantly reduced after oxidation, consistent with edge oxidation. On the other hand, 1T MoS2 remains unaffected after oxidation, suggesting that edges of the nanosheets are not the main active sites. The importance of electrical conductivity of the two phases on the hydrogen evolution reaction activity has been further confirmed by using carbon nanotubes to increase the conductivity of 2H MoS2.


ACS Nano | 2013

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Weijie Zhao; Zohreh Ghorannevis; Leiqiang Chu; Minglin Toh; Christian Kloc; Ping-Heng Tan; Goki Eda

Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion in mono- to few-layer thickness regime. Molybdenum disulfide (MoS(2)) was recently found to exhibit indirect-to-direct gap transition when the thickness is reduced to a single monolayer. Emerging photoluminescence (PL) from monolayer MoS(2) opens up opportunities for a range of novel optoelectronic applications of the material. Here we report differential reflectance and PL spectra of mono- to few-layer WS(2) and WSe(2) that indicate that the band structure of these materials undergoes similar indirect-to-direct gap transition when thinned to a single monolayer. The transition is evidenced by distinctly enhanced PL peak centered at 630 and 750 nm in monolayer WS(2) and WSe(2), respectively. Few-layer flakes are found to exhibit comparatively strong indirect gap emission along with direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by a chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest a strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe(2).


Nano Letters | 2009

Graphene-based Composite Thin Films for Electronics

Goki Eda; Manish Chhowalla

The electrical properties of solution-processed composite thin films consisting of functionalized graphene sheets (FGS) as the filler and polystyrene (PS) as the host material are described. We demonstrate that transistors from graphene-based composite thin films exhibit ambipolar field effect characteristics, suggesting transport via percolation among FGS in the insulating PS matrix. Device characteristics as a function of the FGS size are also reported. The results indicate that devices fabricated using the largest size FGS yield the highest mobility values. This simple and scaleable fabrication scheme based on a commodity plastic could be useful for low-cost, macro-scale electronics.

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Weijie Zhao

National University of Singapore

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Ivan Verzhbitskiy

National University of Singapore

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Hisato Yamaguchi

Los Alamos National Laboratory

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Shisheng Li

National University of Singapore

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Leiqiang Chu

National University of Singapore

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A. H. Castro Neto

National University of Singapore

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Barbaros Özyilmaz

National University of Singapore

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Kian Ping Loh

National University of Singapore

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Minglin Toh

Nanyang Technological University

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