Gongbin Tang

Sputter deposition of ScAlN using large size alloy target with high Sc content and reduction of Sc content in deposited films

This paper describes deposition of ScAlN thin films by the conventional radio frequency (RF) magnetron sputtering using large size Sc–Al alloy targets with high Sc content. Two 4-in. Sc–Al alloy targets with the Sc content of 43 and 32% were prepared by the sintering method instead of the conventional dissolution method, and deposited film qualities and uniformity were evaluated. In both cases, uniform ScAlN thin films were obtained throughout the three inch wafer. However, measured Sc content was significantly lower than that of the target. Influence of the N2 content in the sputtering gas was also investigated, and the result indicated that nitridation of the target surface is at least one of the major reasons causing the reduction of the Sc content in the deposited films. We also reports variation in film qualities observed with the accumulated sputtering time.

SAW Characteristics of AlN/SiO 2 /3C-SiC Layered Structure With Embedded Electrodes

A layered structure of aluminum nitride (AlN)/ silicon dioxide (SiO2)/cubic silicon carbide with embedded electrodes, which enables the growth of high-quality AlN thin films, is proposed and studied. The phase velocity, coupling factor, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element method. The simulation results show that a high velocity of 5485 m/s and a large effective coupling factor (K2 ) of 1.45% can be simultaneously obtained for the first mode. The dramatic enhanced K2 of 10.5% is also obtainable on the proposed structure employing Sc0.4Al0.6N thin film. Besides, the excellent zero TCF is also achieved without deteriorating the coupling factor by adding an amorphous SiO2 overlay.

Enhancement of effective electromechanical coupling factor by mass loading in layered SAW device structures

This paper describes drastic enhancement of K_e² by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO₂ film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This K_e² enhancement is also found when other electrode and/or substrate materials are employed.

Enhancement of effective electromechanical coupling factor by mass loading in layered surface acoustic wave device structures

This paper describes a drastic enhancement of the effective coupling factor by mass loading in layered surface acoustic wave (SAW) device structures such as the ScAlN film/Si substrate structure. This phenomenon occurs when the piezoelectric layer exhibits a high acoustic wave velocity. The mass loading decreases the SAW velocity and causes SAW energy confinement close to the top surface where an interdigital transducer is placed. It is shown that this phenomenon is obvious even when an amorphous SiO2 film is deposited on the top surface for temperature compensation. This enhancement was also found in various combinations of electrode, piezoelectric layer, and/or substrate materials. The existence of this phenomenon was verified experimentally using the ScAlN film/Si substrate structure.

Theoretical analysis of surface acoustic wave propagating properties of Y-cut nano lithium niobate film on silicon dioxide

The surface acoustic wave (SAW) propagating characteristics of Y-cut nano LiNbO3 (LN) film on SiO2/LN substrate have been theoretically calculated. The simulated results showed a shear horizontal (SH) SAW with enhanced electromechanical coupling factor K2 owing to a dimensional effect of the nanoscale LN film. However, a Rayleigh SAW and two other resonances related to thickness vibrations caused spurious responses for wideband SAW devices. These spurious waves could be fully suppressed by properly controlling structural parameters including the electrode layer height, thickness, and the Euler angle (θ) of the LN thin film. Finally, a pure SH SAW was obtained with a wide θ range, from 0° to 5° and 165° to 180°. The largest K2 achieved for the pure SH SAW was about 35.1%. The calculated results demonstrate the promising application of nano LN film to the realization of ultra-wideband SAW devices.

Thin plate model for transverse mode analysis of surface acoustic wave devices

In this paper, we propose a physical model for the analysis of transverse modes in surface acoustic wave (SAW) devices. It is mostly equivalent to the scalar potential (SP) theory, but sufficiently flexible to include various effects such as anisotropy, coupling between multiple modes, etc. First, fundamentals of the proposed model are established and procedures for determining the model parameters are given in detailed. Then the model is implemented in the partial differential equation mode of the commercial finite element analysis software COMSOL. The analysis is carried out for an infinitely long interdigital transducer on the 128°YX-LiNbO3 substrate. As a demonstration, it is shown how the energy leakage changes with the frequency and the device design.

Frequency domain FEM analysis of reflector scattering characteristics for SAW tags

This paper proposes a frequency domain analysis (FDA) based on the finite element method (FEM) for calculating reflector scattering characteristics of SAW tags. This method is applicable not only to devices employing conventional single-crystal substrates but also multi-layered ones. First, reflection characteristics are calculated for a short reflector on 128°YX-LiNbO3 and compared with the result previously reported. Then the method is applied to short reflectors on the AlN/Si layered structure, and their applicability to SAW tags is discussed.

Modeling of lateral SAW propagation including coupling between different SAW modes

This paper describes lateral propagation of surface acoustic waves (SAWs) when two types of SAWs are coupled. For the analysis, the thin plate model proposed by the authors is extended to include interaction between two SAW modes. Firstly, lateral wave propagation in an infinitely long periodic grating is modelled and discussed, it is found that SAW slowness curves can be changed by mode coupling. Then, the model is applied to the analysis of two-dimensional SAW propagation on the Al grating on the 42°YX-LiTaO3 (42-LT) substrate structure to investigate how the lateral SAW propagation changes with the Al grating thickness. Finally, SAW resonators on 42-LT substrate with Cu electrodes are fabricated and the results confirm the feasibility of the model.

Influence of coupling with shear horizontal surface acoustic wave on lateral propagation of Rayleigh surface acoustic wave on 128°YX-LiNbO3

In this paper, we investigate the impact of the coupling with shear horizontal (SH) surface acoustic wave (SAW) on the propagation of Rayleigh SAW in periodic grating structures on 128°YX-LiNbO3. First, the frequency dispersion behavior with longitudinal and lateral wavenumbers of Rayleigh SAW is calculated using the finite element method (FEM) software COMSOL. It is shown that the coupling causes (1) the satellite stopband and (2) variation of the anisotropy factor. It is also shown these phenomena remain even when the electromechanical coupling factor of SH SAW is zero. Then, the extended thin plate model which can take coupling between two SAWs into account, is applied to simulate the result of FEM. Good agreement between these results indicated that the mechanical coupling is responsible for these two phenomena. Finally, including electrical excitation and detection, the model is applied to the infinitely long interdigital transducer (IDT) structure and the calculated result is compared with that obtained by the three-dimensional FEM. The excellent agreement of both results confirms the effectiveness of the extended thin plate model.

SAW/BAW band reject filters embedded in impedance converter

This paper discusses SAW-BAW-based band reject filters. They are composed of the impedance converters, where capacitive elements are replaced with SAW/BAW resonators. First, basic properties of the unit cell are studied. It is shown how basic properties of a unit cell change with the design. It is also shown that when two notches caused by the resonators are placed in proximity, two synergy effects occur: (i) an extra matching point appears on one side of the transition band. This make the insertion loss at the point smaller and the transition band steeper, and (ii) the dip level becomes deeper, and the total rejection level becomes better. Then, the wide rejection band filter is designed by cascading multi-stages, and effectiveness of the device configurations is demonstrated.