Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Govindasamy Rajesh is active.

Publication


Featured researches published by Govindasamy Rajesh.


Defect and Diffusion Forum | 2012

Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS

Mukannan Arivanandhan; Govindasamy Rajesh; Akira Tanaka; Tetsuo Ozawa; Yasunori Okano; Yuko Inatomi; Y. Hayakawa

As a preliminary experiment for the growth of InGaSb alloy crystals under microgravity at International Space Station (ISS), bulk crystal was grown under terrestrial condition using the same gradient heating furnace (GHF). Czochralski grown GaSb <111>B single crystal was used as a seed and feed crystals for the growth of InGaSb bulk crystals. During the growth, heat pulses were intentionally introduced periodically to create the growth striations. From the striations, the growth rate of the grown crystal was estimated. The results show that the growth rate was gradually increased from the beginning of the growth and became stable. On the other hand the In composition of the grown crystal decreased along the growth direction. From the In composition, the temperature gradient in the solution was estimated and it was almost the same of that fixed during the growth.


npj Microgravity | 2016

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

Velu Nirmal Kumar; Mukannan Arivanandhan; Govindasamy Rajesh; T. Koyama; Yoshimi Momose; Kaoruho Sakata; Tetsuo Ozawa; Yasunori Okano; Yuko Inatomi; Y. Hayakawa

InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B.


INTERNATIONAL CONFERENCE ON PHYSICS OF EMERGING FUNCTIONAL MATERIALS (PEFM-2010) | 2010

Alloy Semiconductor Crystal Growth Under Microgravity

Y. Hayakawa; Mukannan Arivanandhan; Govindasamy Rajesh; Akira Tanaka; Tetsuo Ozawa; Yasunori Okano; K. Sankaranarayanan; Yuko Inatomi

Microgravity studies on the dissolution and crystallization of InxGa1‐xSb have been done using a sandwich combination of InSb and GaSb as the starting material using the Chinese recoverable satellite. The same type of experiment was performed under 1G gravity condition for comparison. From these experiments and the numerical simulation, it is found that the shape of the solid/liquid interface and composition profile in the solution was found to be significantly affected by gravity. GaSb seed was dissolved faster than GaSb feed even though the GaSb feed temperature was higher than that of GaSb seed temperature. These results clearly indicate that solute transport due to gravity affects dissolution and growth processes of alloy semiconductor bulk crystals.


Journal of Crystal Growth | 2010

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Govindasamy Rajesh; Mukannan Arivanandhan; Hisashi Morii; Toru Aoki; T. Koyama; Yoshimi Momose; Akira Tanaka; Tetsuo Ozawa; Yuko Inatomi; Y. Hayakawa


Journal of Crystal Growth | 2011

Effects of Solutal Convection on the Dissolution of GaSb into InSb Melt and Solute Transport Mechanism in InGaSb Solution: Numerical Simulations and In-situ Observation Experiments

Govindasamy Rajesh; Mukannan Arivanandhan; N. Suzuki; Akira Tanaka; Hisashi Morii; Toru Aoki; T. Koyama; Yoshimi Momose; Tetsuo Ozawa; Yuko Inatomi; Youhei Takagi; Yasunori Okano; Y. Hayakawa


Transactions of The Japan Society for Aeronautical and Space Sciences, Space Technology Japan | 2014

Crystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station

Kaoruho Sakata; Midori Mukai; Mukannan Arivanandhan; Govindasamy Rajesh; Takehiko Ishikawa; Yuko Inatomi; Y. Hayakawa


Advances in Space Research | 2014

Thermal properties of molten InSb, GaSb, and InxGa1 xSb alloy semiconductor materials in preparation for crystal growth experiments on the international space station

Kaoruho Sakata; Midori Mukai; Govindasamy Rajesh; Mukannan Arivanandhan; Yuko Inatomi; Takehiko Ishikawa; Y. Hayakawa


Archive | 2014

Viscosity of Molten InSb, GaSb, and InxGa1-xSb Alloy Semiconductors

薫穂 阪田; 碧 向井; Govindasamy Rajesh; Mukannan Arivanandhan; 裕光 稲富; 毅彦 石川; 泰弘 早川; Kaoruho Sakata; Midori Mukai; Yuko Inatomi; Takehiko Ishikawa; Y. Hayakawa


International Journal of Thermophysics | 2014

Viscosity of Molten InSb, GaSb, and \(\mathrm{{In}}_{x}\mathrm{{Ga}}_{1-{x}}\mathrm{{Sb}}\) Alloy Semiconductors

Kaoruho Sakata; M. Mukai; Govindasamy Rajesh; Mukannan Arivanandhan; Yuko Inatomi; Takehiko Ishikawa; Y. Hayakawa


JASMA : Journal of the Japan Society of Microgravity Application | 2011

Crystal Growth of InGaSb Alloy Semiconductor at International Space Station: Preliminary Experiments

Mukannan Arivanandhan; Govindasamy Rajesh; T. Koyama; Yoshimi Momose; K. Sankaranarayanan; Akira Tanaka; Y. Hayakawa; Tetsuo Ozawa; Yasunori Okano; Yuko Inatomi

Collaboration


Dive into the Govindasamy Rajesh's collaboration.

Top Co-Authors

Avatar
Top Co-Authors

Avatar

Yuko Inatomi

Japan Aerospace Exploration Agency

View shared research outputs
Top Co-Authors

Avatar
Top Co-Authors

Avatar

Tetsuo Ozawa

Shizuoka Institute of Science and Technology

View shared research outputs
Top Co-Authors

Avatar
Top Co-Authors

Avatar

Kaoruho Sakata

Japan Aerospace Exploration Agency

View shared research outputs
Top Co-Authors

Avatar

Takehiko Ishikawa

Japan Aerospace Exploration Agency

View shared research outputs
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Researchain Logo
Decentralizing Knowledge