Graham Meaden

High resolution mapping of strains and rotations using electron backscatter diffraction

Abstract The angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly improved using an analysis based on determination of small shifts in features from one pattern to the next using cross-correlation functions. Using pattern shift measurements at many regions of the pattern, errors in the best fit strain and rotation tensors can be reduced. The authors show that elements of the strain tensor and small misorientations can be measured to ± 10−4 and ±0·006° for rotations. We apply the technique to two quite different materials systems. First, we determine the elastic strain distribution near the interface in a cross-sectioned SiGe epilayer, Si substrate semiconductor heterostructure. The plane stress boundary conditions at the sample surface are used to separate every term in the strain tensor. Second, the applicability to structural materials is illustrated by determining the lattice curvature caused by dislocations within the plastic zone associated with the wake and tip of a fatigue crack in a Ni based superalloy. The lattice curvatures are used to calculate the geometrically necessary dislocation content in the plastic zone.

Factors affecting the accuracy of high resolution electron backscatter diffraction when using simulated patterns

High resolution EBSD directly compares electron backscattering patterns (EBSPs), generated in a scanning electron microscope, to measure relative strain and rotation to a precision of ∼ 10(-4) in strain and 10(-4)rad (0.006 °) in rotation. However the measurement of absolute strain and rotation requires reference EBSPs of known strain and orientation (or a far field region of known strain). Recent suggestions of using simulated EBSPs with known strain show much promise. However precise measurement of the experimental geometry (pattern centre) is required. Common uncertainties of 0.5% in pattern centre result in uncertainty of ∼ 10(-3) in strain state. Aberrations in the compact lenses used for EBSP capture can also result in image shifts that correspond to strains/rotations of ± 10(-3) between experimental and simulated EBSPs. Simulated EBSPs can be generated using dynamical or kinematic models (or a combination of the two). The choice in simulation model has a significant effect on the measured shifts, particularly at zone axis and high structure factor bands, due to large intensity variations, and for simple kinematic simulations can result in the measurement of rogue shifts and thus erroneous strain measurements. Calibrant samples of known strain provide a method of measuring the experimental geometry but imprecise stage movement combined with the high depth of field in the SEM could also result in uncertainties in strain of ∼ 10(-3).

Elastic strain tensor measurement using electron backscatter diffraction in the SEM.

The established electron backscatter diffraction (EBSD) technique for obtaining crystallographic information in the SEM has been adapted to permit elastic strain measurement. Basically, the displacement of crystallographic features in an EBSD pattern, such as zone axes, which result from strain in a crystal, is determined by comparing those same features as they appear in a pattern from an unstrained region of the crystal. The comparison is made by cross-correlation of selected regions in the two patterns. Tests show that the sensitivity to displacement measurement is 1 part in 10 000, which translates to a strain sensitivity of 2 parts in 10 000. Eight components of the strain tensor are determined directly and the ninth is calculated using the fact that the free surface of the sample is traction-free. Examples discussed are taken from studies of a lenticular fracture in germanium, the strain distribution surrounding a carbide precipitate in a nickel base alloy and grain boundary studies in another nickel base alloy.