Gregoire Ribordy

Quantum key distribution over 67 km with a plug&play system

We present a fibre-optical quantum key distribution system. It works at 1550nm and is based on the plug & play setup. We tested the stability under field conditions using aerial and terrestrial cables and performed a key exchange over 67 km between Geneva and Lausanne.

Field test of quantum key distribution in the Tokyo QKD Network

A secure communication network with quantum key distribution in a metropolitan area is reported. Six different QKD systems are integrated into a mesh-type network. GHz-clocked QKD links enable us to demonstrate the world-first secure TV conferencing over a distance of 45km. The network includes a commercial QKD product for long-term stable operation, and application interface to secure mobile phones. Detection of an eavesdropper, rerouting into a secure path, and key relay via trusted nodes are demonstrated in this network.

Quantum Cryptography Protocols Robust against Photon Number Splitting Attacks for Weak Laser Pulse Implementations

We introduce a new class of quantum key distribution protocols, tailored to be robust against photon number splitting (PNS) attacks. We study one of these protocols, which differs from the original protocol by Bennett and Brassard (BB84) only in the classical sifting procedure. This protocol is provably better than BB84 against PNS attacks at zero error.

Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology

In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor (CMOS) high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias voltages up to 5 V. At this value, the detection probability is larger than 20% between 420 nm and 620 nm and still 7% at 750 nm. The photosensitive area is 7 μm in diameter. Cointegration of the diode and the quenching resistor allows a drastic reduction of parasitic capacitances. Though passively quenched, the single photon detector exhibits a dead time as low as 75 ns. The avalanche current is quickly quenched in less than 3.5 ns leading to a relatively low afterpulsing probability of 7.5% at 5 V excess bias voltage. The afterpulses are located in the first microseconds after the avalanche event. At room temperature, the dark count rate is about 900 Hz at 5 V excess bias voltage. Cooling of the sensor below 0 °C is of minor interest since the tunneling process becomes dominant. A remarkably short timing resolution has been obtained with values lower than 50 ps for excess bias voltage higher than 5 V. The industrial CMOS high-voltage technology used guarantees low production costs. In applications where the light can be focused on the small photosensitive area using a high magnification objective, the fabricated single photon avalanche photodiode overcomes the features of standard photomultiplier tubes. The CMOS integration opens the way to the fabrication of an extremely compact array. The design can be easily fitted to a dedicated application. Furthermore, by using an industrial CMOS process, the cointegration of data processing electronics to produce a smart sensor would be a feasible task.

Performance of InGaAs/InP avalanche photodiodes as gated-mode photon counters

We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-mum wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temperature is studied for both wavelengths. At 173 K and with a dark-count probability per gate of 10(-4), detection efficiencies of 16% for 1.3 mum and 7% for 1.55 mum are obtained. Finally, a timing resolution of less than200 ps is demonstrated.

Photon counting for quantum key distribution with peltier cooled InGaAs/InP APDs

Abstract The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of 2.8 × 10−5 per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -60°C. The afterpulse probability and the timing jitter are also studied. The results obtained are compared with those of other papers and applied to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 km.

Long-term performance of the SwissQuantum quantum key distribution network in a field environment

In this paper, we report on the performance of the SwissQuantum quantum key distribution (QKD) network. The network was installed in the Geneva metropolitan area and ran for more than one-and-a-half years, from the end of March 2009 to the beginning of January 2011. The main goal of this experiment was to test the reliability of the quantum layer over a long period of time in a production environment. A key management layer has been developed to manage the key between the three nodes of the network. This QKD-secure network was utilized by end-users through an application layer.

Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes: current performance

Abstract InGaAs/InP avalanche photodiodes operated in the so-called Geiger mode currently represent the best solution to detect single-photon beyond 900nm. They cover the 1100–1650nm wavelength interval, which includes in particular the two windows used for optical communications (1310 and 1550nm). A detection efficiency at 1550nm of 10% with a dark count probability of 10−5 ns−1 is common, although significant variations can be encountered. At this efficiency, a FWHM temporal response of 300 ps can be achieved. Afterpulses caused by charges trapped by defects in the high field region of the junction constitute the main performance impairment phenomenon. They enhance the dark count probability and reduce out-of-gate detector blindness. These photon counting detectors can be used in optical time-domain reflectometry to improve the spatial resolution and reduce dead-zone effects. Quantum key distribution over metropolitan area networks also constitutes an important application.

Fast and user-friendly quantum key distribution

Abstract Some guidelines for the comparison of different quantum key distribution experiments are proposed. An improved ‘plug & play’ interferometric system allowing fast key exchange is introduced. Self-alignment and compensation of birefringence remain. Original electronics implementing the BB84 protocol and allowing user-friendly operation is presented. Key creation with 0.1 photon per pulse at a rate of 486 Hz with a 5.4% QBER, corresponding to a net rate of 210Hz, over a 23 Km installed cable was performed.

Optical frequency domain reflectometry with a narrow linewidth fiber laser

The present a new optical frequency domain reflectometer based on a tunable fiber laser with a very narrow linewidth (about 10 kHz). This instrument performs reflectivity measurements with -110 dB sensitivity and 80 dB dynamic range. The narrow linewidth allows long-range measurements, at 150 m, with a spatial resolution of 16 cm. At short range, about 5 m, the resolution increases to subcentimeter.