Gregory J. Salamo

Nonlinear refraction and absorption: mechanisms and magnitudes

We provide an in-depth treatment of the various mechanisms by which an incident light beam can produce an intensity- or flux-dependent change in the refractive index and absorption coefficient of different materials. Whenever possible, the mechanisms are initially traced to single-atom and -molecule effects in order to provide physical understanding. Representative values are given for the various mechanisms. Nine different mechanisms are discussed, starting with the Kerr effect due to atoms and/or molecules with discrete states, including organic materials such as molecules and conjugated polymers. Simplified two and/or three-level models provide useful information, and these are summarized. The nonlinear optics of semiconductors is reviewed for both bulk and quantum-confined semiconductors, focusing on the most common types II–VI and III–V. Also discussed in some detail are the different nonlinear mechanisms that occur in liquid crystals and photorefractive media. Additional nonlinear material systems and mechanisms such as glasses, molecular reorientation of single molecules, the electrostrictive effect, the nuclear effect (vibrational contributions), cascading, and the ever-present thermal effects are quantified, and representative tables of values are given.

Light-harvesting using high density p-type single wall carbon nanotube/n-type silicon heterojunctions.

Photovoltaic conversion was achieved from high-density p-n heterojunctions between single-wall carbon nanotubes (SWNTs) and n-type crystalline silicon produced with a simple airbrushing technique. The semitransparent SWNT network coating on n-type silicon substrate forms p-n heterojunctions and exhibits rectifying behavior. Under illumination the numerous heterojunctions formed between substrate generate electron-hole pairs, which are then split and transported through SWNTs (holes) and n-Si (electrons), respectively. The nanotubes serve as both photogeneration sites and a charge carriers collecting and transport layer. Chemical modification by thionyl chloride of the SWNT coating films was found to significantly increase the conversion efficiency by more than 50% through adjusting the Fermi level and increasing the carrier concentration and mobility. Initial tests have shown a power conversion efficiency of above 4%, proving that SOCl(2) treated-SWNT/n-Si configuration is suitable for light-harvesting at relatively low cost.

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.

Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy

Normal incident photodetection at mid infrared spectral region is achieved using the intersublevel transitions from strain-free GaAs quantum dot pairs in Al(0.3)Ga(0.7)As matrix. The GaAs quantum dot pairs are fabricated by high temperature droplet epitaxy, through which zero strain quantum dot pairs are obtained from lattice matched materials. Photoluminescence, photoluminescence excitation optical spectroscopy, and visible-near-infrared photoconductivity measurement are carried out to study the electronic structure of the photodetector. Due to the intersublevel transitions from GaAs quantum dot pairs, a broadband photoresponse spectrum is observed from 3 to 8 microm with a full width at half-maximum of approximately 2.0 microm.

Comparative study on different carbon nanotube materials in terms of transparent conductive coatings

We compared conductive transparent carbon nanotube coatings on glass substrates made of differently produced single-wall (SWNT), double-wall, and multiwall carbon nanotubes. The airbrushing approach and the vacuum filtration method were utilized for the fabrication of carbon nanotube films. The optoelectronic performance of the carbon nanotube film was found to strongly depend on many effects including the ratio of metallic-to-semiconducting tubes, dispersion, length, diameter, chirality, wall number, structural defects, and the properties of substrates. The electronic transportability and optical properties of the SWNT network can be significantly altered by chemical doping with thionyl chloride. Hall effect measurements revealed that all of these thin carbon nanotube films are of p-type probably due to the acid reflux-based purification and atmospheric impurities. The competition between variable-range hoping and fluctuation-assisted tunneling in the functionized carbon nanotube system could lead to a crossover behavior in the temperature dependence of the network resistance.

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

We propose a type of pn-junction not formed by impurity-doping, but rather by grading the Al composition in an AlxGa1−xN thin film, resulting in alternating p and n conducting regions due to polarization charge. By linearly grading AlxGa1−xN from 0% to x (x ≤ 30%) and back to 0% Al, a polarization induced pn-junction is formed, even in the absence of any impurity doping. X-ray diffraction reciprocal space maps are used to determine the strain state of the different graded composition samples. Polarization induced doping also provides a solution to the problem of p-type doping efficiency for III-nitrides.

SOCl2 enhanced photovoltaic conversion of single wall carbon nanotube/n-silicon heterojunctions

We report solar cells based on high-density p-n heterojunctions between single wall carbon nanotubes (SWCNTs) and a n-type silicon wafer. Chemical modification by thionyl chloride of the SWCNT coating films was found to significantly increase the conversion efficiency by more than 45% through adjusting the Fermi level and increasing the carrier concentration and mobility. Electron-hole pairs are optically excited in the numerous heterojunctions formed between SOCl2-treated SWCNTs thin coating and n-type silicon substrate, and then split and transported through SWCNTs (holes) and n-Si (electrons), respectively.

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

We report on the operation of electrically pumped 1.3μm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.

InGaAs/GaAs three-dimensionally-ordered array of quantum dots

We report on the first fabrication of (In,Ga)As/GaAs quantum dots with both vertical and lateral ordering forming a three-dimensional array. An investigation of the photoluminescence spectra from the ordered array of quantum dots, as a function of both temperature and optical excitation intensity, reveals both a lateral and vertical transfer of excitation.

Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.