Gregory Moille

High-performance and power-efficient 2×2 optical switch on Silicon-on-Insulator

A compact (15µm × 15µm) and highly-optimized 2×2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1 dB, static and dynamic contrast are 40 dB and >20 dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 µs.

Partially localized hybrid surface plasmon mode for thin-film semiconductor infrared photodetection.

We use numerical simulations to show that a suitably dimensioned periodic arrangement of vertical metallic metal-dielectric-metal nanocavities supports a hybrid plasmonic mode whose spatial electric field distribution is suitable for use in infrared photodetectors based on an unpatterned semiconductor thin-film absorbing layer. The partially localized nature of the hybrid mode offers reduced sensitivity to the angle of incoming light and smaller pixel sizes compared with surface plasmonic modes coupled by diffraction.

Silicon-on-Insulator RF Filter Based on Photonic Crystal Functions for Channel Equalization

A compact silicon-on-insulator two-tap interferometer is demonstrated as a channel equalizer. The radiofrequency filter is reconfigurable thanks to thermally controlled photonic crystal couplers and delay lines. The channel fading of a dispersive fiber link supporting a directly modulated telecommunication signal is successfully compensated for using the interferometer, leading to eye diagram opening and the possibility to recover the bit-error-rate of a reference signal with less than 1-dB power penalty.

Acceleration of the nonlinear dynamics in p-doped indium phosphide nanoscale resonators

We demonstrated a twofold acceleration of the fast time constant characterizing the recovery of a p-doped indium-phosphide photonic crystal all-optical gate. Time-resolved spectral analysis is compared to a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This opens the perspective for faster yet efficient nanophotonic all-optical gates.

GaAs photonic crystal switch for electro-optic sampling

A GaAs Photonic Crystal based photoconductive switch is controlled by mode-locked fiber laser operating in the Telecom spectra, owing to efficient nonlinear interaction. The bandwidth reaches > 10 GHz owing to the strong surface recombination.

All-optical gates based on photonic crystal resonators

We briefly review the technology of advanced nonlinear resonators for all-optical gating with a specific focus on the application of high-performance signal sampling and on the properties of III-V semiconductor photonic crystals

Towards faster InP photonic crystal all-optical-gates

We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the perspective for faster yet efficient nanophotonic all-optical gates.

Recovery time control in a nanophotonic nonlinear gate using atomic layer deposition

Atomic Layer Deposition is used to control the surface recombination of carriers in GaAs photonic crystal cavities. All-optical wavelength conversion at a GHz repetition rate is demonstrated with recovery time below 10 ps.

High contrast and power-efficient thermally-controlled optical switch on Silicon-on-Insulator

A low-loss and fast optical switch is demonstrated on Silicon-on-Insulator. Low insertion losses (6dB), a large dynamic contrast (30dB) and a wide tuning range (6nm) are achieved with an operating electric power consumption in the milliwatt range.

An efficient all-optical gate based on photonic crystals cavities and applications

We use two coupled photonic crystal cavities to build an all-optical gate. The control and the modulated signal are separated spectrally by about 10 nm. This device was operated at a rate ranging from 1 to 10 GHz with maximum coupled average power of less than 1 mW in the control signal, which translates to about 100 fJ per control pulse.