Guangsha Shi

Anisotropic Spin Transport and Strong Visible-Light Absorbance in Few-Layer SnSe and GeSe

SnSe and GeSe are layered compound semiconductors that can be exfoliated to form two-dimensional materials. In this work, we use predictive calculations based on density functional and many-body perturbation theory to study the electronic and optical properties of single-layer, double-layer, and bulk SnSe and GeSe. The fundamental band gap is direct in single-layer and double-layer GeSe, but indirect in single-layer and double-layer SnSe. Moreover, the interplay of spin-orbit coupling and lack of inversion symmetry in the monolayer structures results in anisotropic spin splitting of the energy bands, with potential applications in directionally dependent spin transport. We also show that single-layer and double-layer SnSe and GeSe exhibit unusually strong optical absorbance in the visible range. Our results suggest that single-layer and double-layer SnSe and GeSe are promising materials for ultrathin-film photovoltaic applications with theoretical upper bounds to the conversion efficiency that approach the efficiency records realized in organic and dye-sensitized solar cells.

Quasiparticle band structures and thermoelectric transport properties of p-type SnSe

We used density functional and many-body perturbation theory to calculate the quasiparticle band structures and electronic transport parameters of p-type SnSe both for the low-temperature Pnma and high-temperature Cmcm phases. The Pnma phase has an indirect band gap of 0.829 eV, while the Cmcm has a direct band gap of 0.464 eV. Both phases exhibit multiple local band extrema within an energy range comparable to the thermal energy of carriers from the global extrema. We calculated the electronic transport coefficients as a function of doping concentration and temperature for single-crystal and polycrystalline materials to understand the previous experimental measurements. The electronic transport coefficients are highly anisotropic and are strongly affected by bipolar transport effects at high temperature. Our results indicate that SnSe exhibits optimal thermoelectric performance at high temperature when doped in the 1019–1020 cm−3 range.

Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer

Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates. Our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.

Pb7Bi4Se13: A Lillianite Homologue with Promising Thermoelectric Properties

Pb(7)Bi(4)Se(13) crystallizes in the monoclinic space group C2/m (No. 12) with a = 13.991(3) Å, b = 4.262(2) Å, c = 23.432(5) Å, and β = 98.3(3)° at 300 K. In its three-dimensional structure, two NaCl-type layers A and B with respective thicknesses N(1) = 5 and N(2) = 4 [N = number of edge-sharing (Pb/Bi)Se6 octahedra along the central diagonal] are arranged along the c axis in such a way that the bridging monocapped trigonal prisms, PbSe7, are located on a pseudomirror plane parallel to (001). This complex atomic-scale structure results in a remarkably low thermal conductivity (∼0.33 W m(-1) K(-1) at 300 K). Electronic structure calculations and diffuse-reflectance measurements indicate that Pb(7)Bi(4)Se(13) is a narrow-gap semiconductor with an indirect band gap of 0.23 eV. Multiple peaks and valleys were observed near the band edges, suggesting that Pb(7)Bi(4)Se(13) is a promising compound for both n- and p-type doping. Electronic-transport data on the as-grown material reveal an n-type degenerate semiconducting behavior with a large thermopower (∼-160 μV K(-1) at 300 K) and a relatively low electrical resistivity. The inherently low thermal conductivity of Pb(7)Bi(4)Se(13) and its tunable electronic properties point to a high thermoelectric figure of merit for properly optimized samples.

Frenkel-like Wannier-Mott excitons in few-layer Pb I 2

Optical measurements and first-principles calculations of the band structure and exciton states in direct-gap bulk and few-layer

First-principles calculations of the near-edge optical properties of β-Ga2O3

\mathrm{Pb}{\mathrm{I}}_{2}

Electronic and optical properties of two-dimensional GaN from first principles

indicate that the

Relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn: Consistent parameterization and prediction of Seebeck coefficients

n\phantom{\rule{0.16em}{0ex}}=\phantom{\rule{0.16em}{0ex}}1

Correction to Pb7Bi4Se13: A Lillianite Homologue with Promising Thermoelectric Properties

exciton is Frenkel-like in nature in that its energy exhibits a weak dependence on thickness down to atomic-length scales. Results reveal large increases in the gap and exciton binding energy with a decreasing number of layers and a transition of the fundamental gap, which becomes indirect for one and two monolayers. Calculated values are in reasonable agreement with a particle-in-a-box model relying on the Wannier-Mott theory of exciton formation. General arguments and existing data suggest that the Frenkel-like character of the lowest exciton is a universal feature of wide-gap layered semiconductors whose effective masses and dielectric constants give bulk Bohr radii that are on the order of the layer spacing.

Low-temperature structural and transport anomalies in Cu2Se

We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of β-Ga2O3. The fundamental band gap is indirect, but the minimum direct gap is only 29 meV higher in energy, which explains the strong near-edge absorption. Our calculations verify the anisotropy of the absorption onset and explain the range (4.4–5.0 eV) of experimentally reported band-gap values. Our results for the radiative recombination rate indicate that intrinsic light emission in the deep-ultra-violet (UV) range is possible in this indirect-gap semiconductor at high excitation. Our work demonstrates the applicability of β-Ga2O3 for deep-UV detection and emission.