Guillaume Ducournau

Ultrawide-Bandwidth Single-Channel 0.4-THz Wireless Link Combining Broadband Quasi-Optic Photomixer and Coherent Detection

Free space communications with huge data capacity have become a key point for the development of mobile access, services, and network technologies convergence. Wireless links using emerging terahertz technologies, also referred to as T-ray communications, have become an intensive research field within last years since T-rays at the millimeter/submillimeter frontier remain more robust in terms of scintillation, dielectric obstacles, and fog compared with near-infrared signals. Using a passive THz hot-spot which can be fed by fiber optic networks, we investigate up bit rates up to 46 Gbps for a THz wireless transmission system at 400-GHz carrier frequency. Using a THz photomixer integrated with a specific broadband antenna and heterodyne electronic detection, we investigate the eye diagrams using 1-μW received power, highlighting the high sensitivity and ultra-wideband behavior of the whole THz system.

Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor

It is shown from accurate on-wafer measurement that continuous wave output powers of 1.2 mW at 50 GHz and 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Perot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers. A satisfactory agreement between the theory and the experiment is obtained in considering both the contribution of the holes and the electrons to the total photocurrent.

Searching for THz Gunn oscillations in GaN planar nanodiodes

A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo simulations, an analysis of the static I-V curves and the time-domain evolution of the current obtained when varying some simulation parameters in the diodes has been made. Oscillation frequencies of hundreds of GHz are predicted by the simulations in diodes with micrometric channel lengths. Following simulation guidelines, a first batch of diodes was fabricated. It was found that surface charge depletion effects are stronger than expected and inhibit the onset of the oscillations. Indeed, a simple standard constant surface charge model is not able to reproduce experimental measurements and a self-consistent model must be included in the simulations. Using a self-consistent model, it was found that to achieve oscillations, wider channels and improved geometries are necessary.

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.

Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy

A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements.

CW Source Based on Photomixing With Output Power Reaching 1.8 mW at 250 GHz

It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz is generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity. To the best of our knowledge, it is the highest power ever reported for a single photomixer in the J-band.

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer measurements revealed no roll-off in responsivity in the range of 2–315 GHz. At 50 GHz, a responsivity of 17 V/W and a noise-equivalent power (NEP) of 150 pW/Hz½ was observed for the SSD when driven by a 50 Ω source. With a conjugately matched source, a responsivity of 34 V/W and an NEP of 65 pW/Hz½ were estimated. An antenna-coupled SSD demonstrated a responsivity of 0.7 V/W at 600 GHz. The results demonstrate the feasibility of zero-bias terahertz detection with high-electron mobility InAs SSDs up to and beyond 100 GHz.

Analysis of a narrowband terahertz signal generated by a unitravelling carrier photodiode coupled with a dual-mode semiconductor Fabry-Pérot laser

A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced with a dual-mode Fabry–Perot laser diode is demonstrated. A beat tone corresponding to the free spectral range is generated on the UTC-PD, and radiated by a transverse-electromagnetic-horn antenna. A terahertz signal at a frequency of 372 GHz, featuring a linewidth of 17 MHz is recorded by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature. The linewidth and the frequency of the emitted terahertz wave are analyzed, along with their dependency on dc-bias conditions applied to laser diode.

Frequency-division multiplexer and demultiplexer for terahertz wireless links

The development of components for terahertz wireless communications networks has become an active and growing research field. However, in most cases these components have been studied using a continuous or broadband-pulsed terahertz source, not using a modulated data stream. This limitation may mask important aspects of the performance of the device in a realistic system configuration. We report the characterization of one such device, a frequency multiplexer, using modulated data at rates up to 10 gigabits per second. We also demonstrate simultaneous error-free transmission of two signals at different carrier frequencies, with an aggregate data rate of 50 gigabits per second. We observe that the far-field spatial variation of the bit error rate is different from that of the emitted power, due to a small nonuniformity in the angular detection sensitivity. This is likely to be a common feature of any terahertz communication system in which signals propagate as diffracting beams not omnidirectional broadcasts.There is growing interest in the development of components to facilitate wireless communications in the terahertz but the characterization of these systems involve an unmodulated input. Here the authors demonstrate multiplexing and demultiplexing of data streams in the terahertz range using a real data link.

Narrow Linewidth Tunable Terahertz Radiation By Photomixing Without Servo-Locking

A beatnote, tunable from dc to 1 THz, provided by a dual-frequency laser is used to feed an unitravelling carrier photodiode in order to produce a highly coherent THz signal radiated by a transverse-electromagnetic-horn antenna. The THz signal is detected and analyzed by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature without phase locking the beatnote. So far, the dynamic range evolves from 58 dB at 282 GHz to 15 dB at 1.026 THz, and the measured linewidth is better than 30 kHz. Linewidth narrowing using a Brillouin fiber laser pumped by the dual-frequency laser leads to a beatnote of 500-Hz linewidth at 1 THz.