Gunther Steinle

Development of InGaAsN-based 1.3 μm VCSELs

We review the status of InGaAsN-based vertical-cavity surface-emitting lasers (VCSELs) emitting in the wavelength range 1.2–1.3 μm and compare them with similar devices that have been realized using other approaches. To prove the potential of InGaAsN-based VCSELs, we present our results for monolithically MBE- and MOVPE-grown and electrically pumped VCSELs on GaAs substrates. Our MBE-grown devices emit at a wavelength of up to 1305 nm with cw output power at room temperature exceeding 1 mW and a threshold current of 2.2 mA. With an oxide-confined current aperture of about 5 μm diameter, they emit up to 700 μW in single-mode operation at room temperature. Bit-error rates of less than 10−11 are achieved for transmission over 20.5 km of standard single-mode fibre at 2.5 Gbit s−1. Our MOVPE-grown VCSELs with a similar device structure emit single mode at a wavelength of 1293 nm with a cw output power of 1.4 mW and a threshold current of 1.25 mA at room temperature. In back-to-back transmission, we reach a data rate of 10 Gbit s−1, proving the feasibility of high-speed data transmission using InGaAsN VCSELs.

Accelerated aging of 28 Gb s−1 850 nm vertical-cavity surface-emitting laser with multiple thick oxide apertures

850 nm vertical-cavity surface-emitting lasers with multiple thick oxide apertures suitable for temperature-insensitive error free transmission at 28 Gb s−1 are subjected to accelerated aging at high current densities and chip temperatures. The devices withstand a 20% power change test at a high current density () at an ambient temperature of for 2500 h. At 90– at this current density no degradation was observed up to 5000 h. We performed the studies at further elevated current densities and temperatures and define the acceleration factor as . The extrapolated lifetime for 20% power drop is estimated as 20 thousand years at 300 K at current density of which is sufficient for 28 Gb s−1 error-free temperature-insensitive data transmission.

Investigation of 1.3-/spl mu/m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques

We have investigated the temperature and pressure dependence of the threshold current (I/sub th/) of 1.3 /spl mu/m emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) and the equivalent edge-emitting laser (EEL) devices employing the same active region. Our measurements show that the VCSEL devices have the peak of the gain spectrum on the high-energy side of the cavity mode energy and hence operate over a wide temperature range. They show particularly promising I/sub th/ temperature insensitivity in the 250-350 K range. We have then used a theoretical model based on a 10-band k.P Hamiltonian and experimentally determined recombination coefficients from EELs to calculate the pressure and temperature dependency of I/sub th/. The results show good agreement between the model and the experimental data, supporting both the validity of the model and the recombination rate parameters. We also show that for both device types, the super-exponential temperature dependency of I/sub th/ at 350 K and above is due largely to Auger recombination.

Hybrid 1285 nm GaInNAs VCSELs with 1.2 mW singlemode output power at 85 °C

We present a new hybrid design for GaInNAs-based vertical-cavity surface emitting lasers (VCSELs) at 1285 nm emission wavelength. The VCSELs show record singlemode optical output powers of 1.2 mW from room temperature to 85 °C with series resistance of 120 . The remarkable overall performance is confirmed by a modulation capability at 6 Gbps demonstrated up to 85 °C.

High-speed modulation, wavelength, and mode control in vertical-cavity surface-emitting lasers

We address demands and challenges for GaAs–based Vertical–Cavity Surface–Emitting Lasers (VCSEL) in data communication. High speed modulation (~50Gb/s) at a high reliability can be realized with a proper VCSEL design providing a high differential gain. In cases where extreme temperatures are required electrooptic modulation in duo– cavity VCSELs can be applied as the modulation speed and the differential gain are decoupled. Single mode operation of VCSELs is necessary to counteract the chromatic dispersion of glass fibers and extend distances to above 1 km while using standard multimode fibers. Oxide layer engineering or using of photonic crystals can be applied. Parallel error–free 25Gb/s transmission over OM3 and OM4 multimode fiber (~0.5 and 1 km, respectively) is realized in large aperture oxide–engineered VCSEL arrays. Passive cavity VCSELs with gain medium placed in the bottom DBR and the upper part made of dielectric materials a complete temperature insensitivity of the emission wavelength can be realized. Engineering of the oxide aperture region enables near field vertical cavity lasers. Such devices can operate in a high– order transverse mode with an effective mode angle beyond the angle of the total internal reflection at the semiconductor–air interface. Near filed coupling to optical fibers and waveguides becomes possible in this case.

Engineering of optical modes in vertical-cavity microresonators by aperture placement: applications to single-mode and near-field lasers

Oxide–confined vertical cavity surface emitting lasers (VCSEL) are inherently leaky structures, despite the fact that the oxidized periphery region surrounding the all–semiconductor core has a lower refractive index. The reason is that the VCSEL modes in the non–oxidized core region can be coupled to tilted modes in the selectively oxidized periphery as the orthogonality between the core mode and the modes at the periphery is broken by the oxidation–induced optical field redistribution. Engineered VCSEL designs show that the overlap between the VCSEL mode of the core and the tilted mode in the periphery can reach >30% resulting in significant leakage. Three–dimensional modeling confirms that the leakage losses are much stronger for high order transverse modes which have a higher field intensity close to the oxidized region. Single mode lasing in the fundamental mode can thus proceed up to large aperture diameters. A 850–nm GaAlAs leaky VCSEL based on this concept is designed, modeled and fabricated, showing single–mode lasing with aperture diameters up to 5 μm. Side mode suppression ratio >20dB is realized at the current density of 10kA/cm2 in devices with the series resistance of 90 Ω.

Development of GaInNAs-based 1.3-μm VCSEL

In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.

GaInNAs quantum well VCSELs

Summary form only given. We have succeeded to produce high performance VCSELs emitting at 1300nm with bitrates up to 10 Gbit/s and output-powers above 1 mW with both approaches. Our long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. We present different devices and discuss the impact of design and growth methods.

Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure

By measuring the spontaneous emission from normally operating ~1.3um GaInNAs/GaAs-based lasers grown by MBE and by MOVPE we have quantitatively determined the variation of monomolecular (defect-related ~An), radiative (~Bn2) and Auger recombination (~Cn3) as a function of temperature from 130K to 370K. We find that A, B and C are remarkably independent of the growth method. Theoretical calculations of the threshold carrier density as a function of temperature were also performed using a 10 band k·p Hamiltonian from which we could determine the temperature variation of A, B and C. At 300K, A=11x10-8 sec-1, B=8x10-11 cm3 sec-1 and C= 6x10-29 cm6 sec-1. These are compared with theoretical calculations of the coefficients and good agreement is obtained. Our results suggest that by eliminating defect-related currents and reducing optical losses, the threshold current density of these GaInNAs/GaAs-based edge-emitting devices would be more than halved at room temperature. The results from studies of temperature and pressure variation of ~1.3um VCSELs produced by similar MBE growth could also be explained using the same recombination coefficients. They showed a broad gain spectrum and were able to operate over a wide temperature range.

VCSEL technologies and applications

VCSEL devices for 850nm and 1300nm emission wavelength are presented, suitable for operation in single-channel interconnects as well as parallel optical links. Necessary properties for applications such as 10 Gigabit Ethernet and actual limits for the use of VCSELs are discussed in some detail. Recent progress is demonstrated in developing devices with production-friendly diameters larger than 5µm for 10Gbit/s operation. Also devices with a temperature insensitive monolithically integrated monitordiode are presented and discussed. In order to reach the emission wavelength of 1300nm with a GaAs-based monolithic VCSEL-structure, we use GaInNxAs1-x quantum-wells with a small nitrogen concentration x between one and two percent. We have two different growth approaches, such as solid source MBE with a rf-plasma source to produce reactive nitrogen from nitrogen gas N2 and MOCVD with unsymmetrical di-methylhydrazine as a precursor for nitrogen. The long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. Bitrates up to 10Gbit/s per channel can be achieved within both wavelength regimes.