Guo-Qiang Lo

Stress-relieved shallow trench isolation (STI) structure and method for forming the same

Cobalt silicide structure for improving gate oxide integrity and method for fabricating same

Structures for preventing gate oxide degradation

Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean

Methods for preventing gate oxide degradation

Gate structures with increased etch margin for self-aligned contact and the method of forming the same

Memory cell with reduced soft error rate

Method of forming an oxide layer

Multi-step tungsten etchback process to preserve barrier integrity in an integrated circuit structure

Gate structures having sidewall spacers formed using selective deposition