Guy Imbert

Small signal characterization and modeling of LC-tanks fabricated in BiCMOS process

In this paper, a procedure for characterization and modeling of LC-tanks is proposed to enhance simulation accuracy in design of monolithic Voltage Controlled Oscillators (VCO). This efficient procedure is easy to implement combining robust design of G-S-G (Ground-Signal-Ground) test structures and accurate on-wafer characterizations, and it is in particular suitable for modeling of high frequency VCOs fabricated in advanced CMOS and BiCMOS technologies. The methodology allows the extraction of LC-tank capacitors including all RLC-tank parasitics and therefore features an important increase of modeling accuracy. The method has been validated in the case of several LC-tanks (oscillating between 6 and 10GHz). The tank inductors and capacitors have been characterized on-wafer up to 50GHz.

8 – Simulation of Degradation Phenomena in Semiconductor Components in order to Ensure the Reliability of Integrated Circuits

Abstract: Microelectronics are literally everywhere within our modern everyday lives. They are present in many fields including transport, medicine, telecommunications etc. All of these applications rely on the use of the same basic unit: the MOS transistor (metal oxide semiconductor field effect transistor) and / or the bipolar transistor.

Characterization and modeling of depletion-type nMOS transistors for RF switches with zero power consumption in ON-state

This paper presents the characterization methodology, RF parameter extractions, and compact modeling of a depletion type- nMOSFET transistor normally “ON” at 0V gate bias. The transistor is used as a RF switch with zero power consumption in on-state and it was fabricated in BiCMOS 0.25μm mature technology from NXP Semiconductors. The test structures of the RF switch are presented and the characteristics in term of small signal equivalent circuit are extracted.

Bicmos LC-tank characterization and extraction of small signal equivalent circuit

In this paper, a procedure for characterization and modeling of LC-tanks is proposed to enhance simulation accuracy in design of monolithic Voltage Controlled Oscillators (VCO). This efficient procedure is easy to implement combining robust design of G-S-G (Ground-Signal-Ground) test structures and accurate on-wafer characterizations, and it is in particular suitable for modeling of high frequency VCOs fabricated in advanced CMOS and BiCMOS technologies. The methodology allows the extraction of LC-tank capacitors including all RLC-tank parasitics and therefore features an important increase of modeling accuracy. The method has been validated in the case of several LC-tanks (oscillating between 6 and 10GHz). The tank inductors and capacitors have been characterized on-wafer up to 50GHz.