H. A. Hafez

Intense terahertz radiation and their applications

In this paper, we will review both past and recent progresses in the generation, detection and application of intense terahertz (THz) radiation. We will restrict the review to laser based intense few-cycle THz sources, and thus will not include sources such as synchrotron-based or narrowband sources. We will first review the various methods used for generating intense THz radiation, including photoconductive antennas (PCAs), optical rectification sources (especially the tilted-pulse-front lithium niobate source and the DAST source, but also those using other crystals), air plasma THz sources and relativistic laser–plasma sources. Next, we will give a brief introduction on the common methods for coherent THz detection techniques (namely the PCA technique and the electro-optic sampling), and point out the limitations of these techniques for measuring intense THz radiation. We will then review three techniques that are highly suited for detecting intense THz radiation, namely the air breakdown coherent detection technique, various single-shot THz detection techniques, and the spectral-domain interferometry technique. Finally, we will give an overview of the various applications that have been made possible with such intense THz sources, including nonlinear THz spectroscopy of condensed matter (optical-pump/THz-probe, THz-pump/THz-probe, THz-pump/optical-probe), nonlinear THz optics, resonant and non-resonant control of material (such as switching of superconductivity, magnetic and polarization switching) and controlling the nonlinear response of metamaterials. We will also provide a short perspective on the future of intense THz sources and their applications.

Carrier density dependence of the nonlinear absorption of intense THz radiation in GaAs

We study the carrier density dependence of nonlinear terahertz (THz) absorption due to field-induced intervalley scattering in photoexcited GaAs using the optical-pump/THz-probe technique. The intervalley scattering in GaAs is strongly dependent on the photo-carrier density. As the carrier density is increased from 1 × 10(17) to 4.7 × 10(17) cm(-3), the nonlinear absorption bleaching increases. However, if the carrier density is increased further above 4.7 × 10(17) cm(-3), the trend reverses and the bleaching is reduced. The initial increase in absorption bleaching is because, unlike low THz field, high THz field experiences intervalley scattering and nonparabolicity of the conduction band. On the other hand, a simple electron transport model shows that the reduction in intervalley scattering is mainly due to the increase in the electron-hole scattering rate with the increase in the carrier density. This increase in the electron-hole scattering rate limits the maximum kinetic energy attainable by the electrons and thus reduces the observed nonlinear absorption.

High-field response of gated graphene at terahertz frequencies

We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This e↵ect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite di↵erent, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.

Nonlinear transmission of an intense terahertz field through monolayer graphene

We report nonlinear terahertz (THz) effects in monolayer graphene, giving rise to transmission enhancement of a single-cycle THz pulse when the incident THz peak electric field is increased. This transmission enhancement is attributed to reduced photoconductivity, due to saturation effects in the field-induced current and increased intraband scattering rates arising from transient heating of electrons. We have developed a tight-binding model of the response using the length gauge interaction Hamiltonian that provides good qualitative agreement. The model fully accounts for the nonlinear response arising from the linear dispersion energy spectrum in graphene. The results reveal a strong dependence of the scattering time on the THz field, which is at the heart of the observed nonlinear response.

MV/cm terahertz pulses from relativistic laser-plasma interaction characterized by nonlinear terahertz absorption bleaching in n-doped InGaAs

We have developed a tabletop intense broadband terahertz (THz) source in the medium frequency range (≤ 20 THz) based on the interaction of a high-intensity femtosecond laser with solid targets at relativistic laser intensities. When an unpolished copper target is irradiated with a high-intensity femtosecond laser, a maximum of ~2.2 μJ of THz pulse energy is collected and detected with a calibrated pyroelectric detector. The THz spectrum was measured by using a series of bandpass filters, showing a bandwidth of ~7.8 THz full-width at half-maximum (FWHM) with a peak at ~6 THz. With tight focusing to reach high field strengths, we have demonstrated THz nonlinearity exemplified by THz absorption bleaching in a heavily n-doped InGaAs thin film, which enabled us to estimate the peak electric field of the THz pulses. We simulated the experimentally observed bleaching by employing a THz pulse having a bandwidth similar to that measured in our experiments and a temporal profile recoded in single-shot electro-optic detection. Through the simulations, we estimate a peak electric field associated with the THz pulses to be 2.5 MV/cm.

Intense terahertz field effects on photoexcited carrier dynamics in gated graphene

We study nonlinear effects of intense terahertz (THz) field on photoexcited carrier dynamics in gated monolayer graphene. By employing optical-pump/intense-THz-probe spectroscopy on lightly doped graphene, we observe a crossover from negative to positive photo-induced THz differential transmission as the THz probe field is increased. We attribute this qualitative change in the response to a crossover from a regime where the photo-induced increase in the carrier density dominates the differential response to one where a THz-field-induced increase in the scattering rate dominates.

Intense THz-coherent transition radiation from laser solid plasma interaction

We investigate intense broadband terahertz radiation generation based the interaction of high intensity ultrashort laser with solid plasma. THz pulse with electric field of hundreds of MV/cm are generated using laser with intensity of about 1018 W/cm2. Theoretical model, simulations agree well with experiments, and reveal that the THz radiation is coherent transition radiation by hot electrons produced in laser-plasma interaction. We have studied both planar and nanorod array targets, latter of which efficiently enhance the intensity and directionality of the THz source.

Control of THz pulse emission in laser plasma interaction by plasma shaping

High-energy, few-cycle THz pulse generation by high-intensity (∼1018 W/cm2) femtosecond laser with plasma mirrors have received significant attention in recent years [1-3]. This novel THz source has the potential of generating large bandwidth millijoule pulse energies, opening up applications in THz nonlinear optics, single-shot imaging and spectroscopy [4]. Solid density plasma shaping has already been observed [5, 6] to yield sub-cycle control in optimizing high harmonic generation from plasma mirrors. Here, we demonstrate that plasma shaping can be a prospective avenue for enhancing and controlling THz emission from plasma mirrors. In this study, we have used two different cases of plasma shaping.

Carrier dynamics in gated graphene revealed by tunable-infrared-pump/terahertz-probe spectroscopy

In this work, we study carrier dynamics in gated graphene using tunable-infrared (IR)-pump/terahertz (THz)-probe spectroscopy. Interband transitions are Pauli blocked in highly doped graphene when pumping at long wavelengths.

Effects of photoexcitation on intense terahertz field-induced nonlinearity in monolayer epitaxial graphene

Terahertz field-induced transmission enhancement in monolayer epitaxial graphene is observed with increasing terahertz field. Photoexcitation leads to further transmission enhancement that is found to be less for the higher terahertz field amplitudes.