H. B. Brom
Leiden University
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Publication
Featured researches published by H. B. Brom.
Physical Review Letters | 1999
Jan Reedijk; H.C.F. Martens; H. B. Brom; Maj Thijs Michels
The interplay between inter- and intrachain charge transport in bulk polythiophene in the hopping regime has been clarified by studying the conductivity
Physical Review B | 2001
H. C. F. Martens; J. A. Reedijk; H. B. Brom; Dago M. de Leeuw; Reghu Menon
\ensuremath{\sigma}
Applied Physics Letters | 2003
van den Rfj Scheer; H. B. Brom; Bmw Bea Langeveld-Voss; van A Dijken; K Brunner
as a function of frequency
Solid State Communications | 1990
D. Reefman; J. Baak; H. B. Brom; G.A. Wiegers
\ensuremath{\omega}/2\ensuremath{\pi}
Physical Review B | 2005
I.N. Hulea; H. B. Brom; A.K. Mukherjee; Reghu Menon
(up to 3 THz), temperature
Physical Review Letters | 2004
Andrea Morello; O. N. Bakharev; H. B. Brom; Roberta Sessoli; L.J. de Jongh
T
Solid State Communications | 1998
F.C. Fritschij; H. B. Brom; Rolf Berger
, and doping level
Synthetic Metals | 1987
Gj Gert Jan Kramer; Lr Groeneveld; Jl Joppe; H. B. Brom; L.J. de Jongh; Jan Reedijk
c
Physical Review B | 2000
G.B. Teitel'baum; I.M. Abu-Shiekah; O. N. Bakharev; H. B. Brom; Jan Zaanen
. We present a model which quantitatively explains the observed crossover from quasi-one-dimensional transport to three-dimensional hopping conduction with increasing doping level. At high frequencies the conductivity is dominated by charge transport on one-dimensional conducting chains.
Physical Review B | 2006
Andrea Morello; F. L. Mettes; O. N. Bakharev; H. B. Brom; L.J. de Jongh; Fernando Luis; Julio F. Fernández; Guillem Aromí
The metallic state in conjugated polymers and single-walled carbon nanotubes: is studied by dielectric spectroscopy (8-600 GHz). We have found an intriguing correlation between scattering time (tau) and plasma frequency (omega (p)):tau (proportional to)omega (-1.3)(p). This relation conflicts with the usually applied models that only consider disorder. Based on the observed parallels with doped semiconductors, we argue that the interchain coupling t(perpendicular to) plays a role comparable to the doping level and that the unusual free-carrier dynamics in the metallic state can be explained when including the role of t(perpendicular to) in the conventional models.