H. B. Lu

The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation

In this letter, we present a gas sensor using a single ZnO nanowire as a sensing unit. This ZnO nanowire-based sensor has quick and high sensitive response to H2S in air at room temperature. It has also been found that the gas sensitivity of the ZnO nanowires could be modulated and enhanced by He+ implantation at an appropriate dose. A possible explanation is given based on the modulation model of the depletion layer.

A novel gas sensor based on field ionization from ZnO nanowires: moderate working voltage and high stability

We report a kind of gas sensor using ZnO nanowires as the field ionization anode. The sharp tips of nanowires generate very high electric fields at relatively low voltages. The sensors show good sensitivity and selectivity. Moreover, the detection limitation of the field ionization based ZnO nanowire gas sensors is about 5%. More importantly, a sensor with ZnO nanowires as the anode exhibits an impressive performance with respect to stability and anti-oxidation behavior, which are significantly better than those of carbon nanotubes (CNTs) as electrodes. Therefore, the simple, low-cost, sensors described here could be deployed for a variety of applications.

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

AbstractSingle crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be

Synthesis and characterisation of three-dimensional dendritic ZnO nanorods

(0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN}

Single CeO2 Nanowire Gas Sensor Supported with Pt Nanocrystals : Gas Sensitivity, Surface Bond States, and Chemical Mechanism

and

Fabrication of CdO nanotubes via simple thermal evaporation

[2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN}