H. Béa

Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films

We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10−2mbar and 580°C. In nonoptimal conditions, x-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behavior, while single-phase films have a low bulklike magnetic moment. Conductive-tip atomic force microscopy mappings also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures.

Charge trapping-detrapping mechanism of barrier breakdown in MgO magnetic tunnel junctions

Endurance of MgO-based magnetic tunnel junctions has been studied using a time-dependent dielectric breakdown method. Series of successive electrical pulses were applied until electrical breakdown of the tunnel barrier. We show that two electrical breakdown regimes exist depending on the time interval Δt between pulses compared to a characteristic escape time of trapped electrons τ0 ∼ 100 ns. For Δt   τ0, breakdown is ascribed to large temporal modulation of trapped charges causing alternating stress in the barrier oxide. Between these two regimes, the tunnel junctions reach a very high endurance.

Penetration depth and absorption mechanisms of spin currents in Ir20Mn80 and Fe50Mn50 polycrystalline films by ferromagnetic resonance and spin pumping

Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir20Mn80 and Fe50Mn50 are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir20Mn80 and spin flipping for Fe50Mn50.

Anisotropic bimodal distribution of blocking temperature with multiferroic BiFeO3 epitaxial thin films

Controlling BiFeO3 (BFO)/ferromagnet (FM) interfacial coupling appears crucial for electrical control of spintronic devices using this multiferroic. Here, we analyse the magnetic behaviour of exchange-biased epitaxial-BiFeO3/FM bilayers with in-plane or out-of-plane magnetic anisotropies. We report bimodal distributions of blocking temperatures similar to those of polycrystalline-antiferromagnet (AF)/FM bilayers. The high-temperature contribution depends on the FM anisotropy direction and is likely related to thermally activated depinning of domain walls in the BiFeO3 single crystal film as opposed to thermally activated reversal of spins in AF grains for polycrystalline AF. In contrast, the low-temperature contribution weakly depends on the anisotropy direction, consistent with a spin-glass origin.

Modelling of time-dependent dielectric barrier breakdown mechanisms in MgO-based magnetic tunnel junctions

An investigation of barrier endurance till electrical breakdown in MgO-based magnetic tunnel junctions (MTJs) is presented. Samples were tested under pulsed electrical stress. By studying the effect of delay between successive pulses, an optimum endurance of MTJs is observed for an intermediate value of delay between pulses corresponding to an optimum trade-off between the average density of charge trapped in the barrier and the amplitude of its time-modulation at each voltage pulse. A charge trapping?detrapping model was developed which shows good coherence with experimental results. The influence of the delay between pulses on the trapped charge density in the tunnel barrier and on its time-modulation is discussed. The average density of trapped charges and its time-modulation are, respectively, responsible for a static and dynamic stress within the tunnel barrier, both leading to breakdown. The probability of breakdown of the MTJ for different applied pulse conditions has been evaluated. The expected endurance of the MTJs was deduced depending on the characteristics of the electrical stress in terms of delay, and unipolarity versus bipolarity. The study emphasizes the role of electron trapping/detrapping mechanisms on the tunnel barrier reliability. It also shows that extremely long endurance could be obtained in MTJs by reducing the density of electron trapping sites in the tunnel barrier.

Correlation between write endurance and electrical low frequency noise in MgO based magnetic tunnel junctions

The write endurance and the 1/f noise of electrical origin were characterized in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) for spin transfer torque or thermally assisted magnetic random access memories. A statistical study carried out on a set of 60 nominally identical patterned junctions of 200 nm diameter revealed a correlation trend between the electrical 1/f noise power in the unexercised MTJs and the number of write cycles that these MTJs can withstand before electrical breakdown. The junctions showing the largest 1/f noise power before the write endurance test (successive 30 ns pulses of 1.73 V) have the lowest endurance. In contrast, MTJs initially exhibiting lower 1/f noise tend to have a better electrical reliability, i.e., much longer write endurance. This correlation is explained by the presence of electron trapping sites in the MgO barrier and the role of electron trapping/detrapping phenomena in both MTJ reliability and its 1/f electrical noise power. These results suggest that 1/f noise could be used as a predictive characterization of the MTJ endurance.

Integration of Multiferroic BiFeO

The revival of multiferroics is motivated by their exciting physics and their ability to bring novel functionalities to a number of technological fields such as spintronics. The lack of room temperature ferroelectric ferromagnets is a problem and has driven most of the attention thus far to BiFeO3, a ferroelectric weak-ferromagnet with both transition temperatures superior to 300 K. In this paper, we report on the properties of BiFeO3 heterostructures and focus on two types of approaches towards BiFeO3-based spintronics devices. One uses BiFeO3 as an exchange bias layer in spin-valve structures in which the magnetic configuration is potentially switchable by an electric field, via the magnetoelectric coupling existing in BiFeO3. The other consists in integrating BiFeO3 ultrathin films as tunnel barriers in magnetic tunnel junctions with the objective of exploiting their ferroelectric character along with their specific symmetry filtering properties. General perspectives for multiferroics in spintronics are given.

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An investigation of barrier breakdown in MgO-based magnetic tunnel junctions (MTJs) submitted to pulsed electrical stress is presented. By studying the effect of delay between successive pulses, we observed that a very pronounced optimum in endurance of MTJs is obtained for an intermediate value of the delay between pulses corresponding to the characteristic time for a trapped electron in the barrier to escape from its trap. A charge trapping-detrapping model was proposed which consistently explains our experimental data. The delay between successive pulses affects the density of electrons trapped in the barrier. The average value in time and the time-modulation of the density of trapped charge give rise to distinct breakdown mechanisms. Our model allows evaluating the MTJ probability of breakdown for different applied pulse conditions. An expected endurance of the MTJs is then derived depending on the characteristics of the electrical stress in terms of delay, amplitude, unipolarity versus bipolarity. In a second part, low-frequency (0-12 kHz) noise measurements were performed in order to correlate the electrical noise with the defect density in the barrier.

Thin Films into Heterostructures for Spintronics

We investigate the behaviour of spin transfer torque (STT) and tunnelling magnetoresistance (TMR) in epitaxial antiferromagnetic-based tunnel junctions using tight binding calculations in the framework of the Keldysh formalism. We find that the STT out-of-plane component exhibits a staggered spatial distribution similar to its in-plane component. This behaviour is specific to the use of a tunnel barrier and significantly differs from the out-of-plane torques reported in previous works using a metallic spacer. Additionally, we show that unlike conventional ferromagnetic-based tunnel junctions, the TMR can increase with applied bias and reach values comparable to typical magnetoresistances found for usual spin valves.

Barrier Breakdown Mechanisms in MgO-Based Magnetic Tunnel Junctions and Correlation With Low-Frequency Noise

Electric control of magnetism is a prerequisite for efficient and low-power spintronic devices. More specifically, in heavy metal-ferromagnet-insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties such as interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate a 130% variation of DMI with electric field in Ta/FeCoB/TaO x trilayer through Brillouin Light Spectroscopy (BLS). Using polar magneto-optical Kerr-effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with an electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion-based memory or logic devices.