H. C. Liang

Dual-comb self-mode-locked monolithic Yb:KGW laser with orthogonal polarizations

The dependence of lasing threshold on the output transmission is numerically analyzed to find the condition for the gain-to-loss balance for the orthogonal Np and Nm polarizations with a Ng-cut Yb:KGW laser crystal. With the numerical analysis, an orthogonally polarized dual-comb self-mode-locked operation is experimentally achieved with a coated Yb:KGW crystal to form a monolithic cavity. At a pump power of 5.2 W, the average output power, the pulse repetition rate, and the pulse duration are measured to be 0.24 (0.6) W, 25.8 (25.3) GHz, and 1.06 (1.12) ps for the output along the Np (Nm) polarization.

High-power subpicosecond harmonically mode-locked Yb:YAG laser with pulse repetition rate up to 240 GHz

We report on the operation of a high-power diode-pumped Yb:YAG self-mode-locked microchip laser with a pulse repetition rate of up to 240 GHz. The gain medium is coated to form a cavity mirror and to act as an etalon for achieving harmonic mode locking. A diamond heat spreader is employed to reduce the thermal effects for power scale-up. At an absorbed pump power of 8.3 W, an average output power of 4.6 W is achieved with a pulse duration of 630 fs and a repetition rate of 240 GHz.

Generation of orthogonally polarized self-mode-locked Nd:YAG lasers with tunable beat frequencies from the thermally induced birefringence

The simultaneous self-mode-locking of two orthogonally polarized states in a Nd:YAG laser is demonstrated by using a short linear cavity. A total output power of 3.8 W can be obtained at an incident pump power of 8.2 W. The beat frequency Δfc between two orthogonally polarized mode-locked components is observed and measured precisely. It is found that the beat frequency increases linearly with an increase in the absorbed pump power. The origin of the beat frequency can be utterly manifested by considering the thermally induced birefringence in the Nd:YAG crystal. The present result offers a promising approach to generate orthogonally polarized mode-locked lasers with tunable beat frequency.

Observation of self-mode-locking assisted by high-order transverse modes in optically pumped semiconductor lasers

The criterion for achieving the self-mode-locking (SML) in an optically pumped semiconductor laser (OPSL) with a linear cavity is systematically explored. Experimental results reveal that the occurrence of SML can be assisted by the existence of high-order transverse modes. Numerical analysis is performed to confirm that the critical pump power for obtaining the SML operation agrees very well with the pump threshold for exciting TEM1,0 mode. The present finding offers an important insight into laser physics and a useful indication for obtaining the SML operation in OPSLs.

Generation of terahertz optical beating from a simultaneously self-mode-locked Nd:YAG laser at 1064 and 1123 nm

The reflectivity of the output coupler is designed to achieve the synchronously self-mode-locked operation at 1064 and 1123 nm in a diode-end-pumped Nd:YAG laser. Numerical analyses are performed to confirm that the designed output coupler can lead the emission lines to be predominant at 1064 and 1123 nm. Moreover, the crossover of the threshold pump powers for the 1064 and 1123 nm emission lines can be exploited to obtain the single central wavelength of 1064 nm or the single central wavelength of 1123 nm or, simultaneously, dual-central-wavelength self-mode-locked operation by finely adjusting the cavity alignment. For the dual-central-wavelength mode-locked emissions, the pulse repetition rate and the pulse duration are 4.5 GHz and 50.8 ps, respectively. The maximum output power can be up to 2.47 W at a pump power of 7.5 W. The synchronization of the 1064 and 1123 nm mode-locked pulses generates the optical beating pulse trains with repetition rates up to 14.7 THz.

A high-power harmonically self-mode-locked Nd:YVO 4 1.34- m laser with repetition rate up to 32.1 GHz

We develop a practical method to achieve harmonically self-mode-locked operation in a Nd:YVO4 1.34- m laser for the generation of high-repetition-rate pulse trains. We exploit a gain medium with partial-reflection coating at the lasing wavelength to introduce effective mode selection. We numerically demonstrate that the coated gain medium can effectively modify the mode spacing of the laser cavity to be the harmonics of the free spectral range of the gain medium when the optical cavity length is adjusted to be commensurate with the optical length of the gain medium. We further employ a coated Nd:YVO4 crystal to realize harmonically mode-locked operation with a highest repetition rate of up to 32.1 GHz. At a pump power of 11.5 W, the average output power of 2.3 W is generated with a pulse duration as short as 5.7 ps. The locking range for the cavity length is also experimentally explored.

Synchronized self-mode-locked 1061-nm and 1064-nm monolithic Nd:YAG laser at cryogenic temperatures with two orthogonally polarized emissions: generation of 670 GHz beating

A dual-wavelength self-mode-locked monolithic Nd:YAG laser at 1061 and 1064 nm is realized at cryogenic temperatures. At an incident pump power of 5.5 W, the total output power can reach 2.5 W and the mode-locked pulse width is 29 ps at a pulse repetition rate of 7.75 GHz. The synchronization of the dual-wavelength emissions leads to a beat frequency of 670 GHz in the individual mode-locked pulse. It is further discovered that the laser output consists of two orthogonally polarized components with a central frequency difference of 127 MHz. The central frequency difference between two orthogonal polarizations mainly arises from the external mechanical stress introduced by the copper holder for the laser crystal.

Exploring the influence of high order transverse modes on the temporal dynamics in an optically pumped mode-locked semiconductor disk laser

We quantitatively investigate the influence of high-order transverse modes on the self-mode locking (SML) in an optically pumped semiconductor laser (OPSL) with a nearly hemispherical cavity. A physical aperture is inserted into the cavity to manipulate the excitation of high-order transverse modes. Experimental measurements reveal that the laser is operated in a well-behaved SML state with the existence of the TEM(0,0) mode and the first high-order transverse mode. While more high-order transverse modes are excited, it is found that the pulse train is modulated by more beating frequencies of transverse modes. The temporal behavior becomes the random dynamics when too many high-order transverse modes are excited. We observe that the temporal trace exhibits an intermittent mode-locked state in the absence of high-order transverse modes.

Exploiting concave-convex linear resonators to design end-pumped solid-state lasers with flexible cavity lengths: Application for exploring the self-mode-locked operation

The characteristics of a convex-concave linear resonator under the thermal lensing effect are theoretically analyzed to find an analytical model for designing end-pumped solid-state lasers with flexible cavity lengths. By exploiting the design model, the power scaling for continuous-wave operation under strong thermal lensing can be easily achieved in the proposed resonator with different cavity lengths. Furthermore, the proposed resonator is applied to explore the exclusive influence of cavity length on the self-mode-locked (SML) operation. It is discovered that the lasing longitudinal modes will split into multiple groups in optical spectrum to lead to a multi-pulse mode-locked temporal state when the cavity length increases. Finally, a theoretical model is derived to reconstruct the experimental results of SML operation to deduce a simple relationship between the group number of lasing modes and the cavity length.

High-peak-power optically-pumped AlGaInAs eye-safe laser with a silicon wafer as an output coupler: comparison between the stack cavity and the separate cavity

An intrinsic silicon wafer is exploited as an output coupler to develop a high-peak-power optically-pumped AlGaInAs laser at 1.52 μm. The gain chip is sandwiched with the diamond heat spreader and the silicon wafer to a stack cavity. It is experimentally confirmed that not only the output stability but also the conversion efficiency are considerably enhanced in comparison with the separate cavity in which the silicon wafer is separated from other components. The average output power obtained with the stack cavity was 2.02 W under 11.5 W average pump power, corresponding to an overall optical-to-optical efficiency of 17.5%; the slope efficiency was 18.6%. The laser operated at 100 kHz repetition rate and the pulse peak power was 0.4 kW.