H. Kurtze

Radiative emission dynamics of quantum dots in a single cavity micropillar

The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponential decay of the photoluminescence where the decay rate strongly depends on the excitation intensity. A microscopic theory of the quantum dot photon emission is used to explain both, the non-exponential decay and its intensity dependence. Also the transition from spontaneous to stimulated emission is studied.

Systematic study of carrier correlations in the electron-hole recombination dynamics of quantum dots

The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown to follow in general a non-exponential decay. Only for specific conditions in regard to optical excitation and carrier population, for example, the decay can be well described by a mono-exponential form. For resonant excitation of the ground state transition a strong shortening of the luminescence decay time is observed as compared to the non-resonant case. The results are consistent with a microscopic theory that accounts for deviations from a simple two-level picture.

Correlated photon-pair emission from a charged single quantum dot

The optical creation and recombination of charged biexciton and trion complexes in an (In,Ga)As/GaAs quantum dot is investigated by micro-photoluminescence spectroscopy. Photon cross-correlation measurements demonstrate the temporally correlated decay of charged biexciton and trion states. Our calculations provide strong evidence for radiative decay from the excited trion state which allows for a deeper insight into the spin configurations and their dynamics in these systems.

Hyperfine interaction mediated exciton spin relaxation in (In,Ga)As quantum dots

The population dynamics of dark and bright excitons in (In,Ga)As/GaAs quantum dots is studied by two-color pump-probe spectroscopy in an external magnetic field. With the field applied in Faraday geometry and at

Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

Tl20

Single‐Photon And Photon Pair Emission From Individual (In,Ga)As Quantum Dots

K, the dark excitons decay on a ten nanoseconds time scale unless the magnetic field induces a resonance with a bright exciton state. At these crossings their effective lifetime is drastically shortened due to spin flips of either electron or hole by which the dark excitons are converted into bright ones. Due to the quasielastic character we attribute the origin of these flips to the hyperfine interaction with the lattice nuclei. We compare the exciton spin relaxation times in the two resonances and find that the spin flip involving an electron is approximately 25 times faster than the one of the hole. A temperature increase leads to a considerable, nonmonotonic decrease of the dark exciton lifetime. Here phonon-mediated spin flips due to the spin-orbit interaction gradually become more important.

Carrier relaxation dynamics in self-assembled semiconductor quantum dots

Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock–Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

Fine structure in the excitonic emission of InAs/ GaAs quantum dot molecules

We present investigations on triggered single‐photon emission and two‐color photon cascades from single quantum dots (QDs) and/or single QDs embedded in microcavities. For the photoluminescence intensity of QDs in pillar microcavities a strong enhancement is revealed in comparison to QDs in bulk semiconductors, thus reflecting an efficient coupling of the emission to the cavity mode. In particular, the capability of efficient triggered single‐photon generation from such devices is demonstrated by photon statistics measurements. From investigations on bare QDs without a surrounding cavity structure, we also demonstrate the selective addressing of neutral or charged carrier configurations in individual QDs by variable excitation energy. Direct evidence is found for the temporally‐correlated decay of a charged biexciton through an excited trionic QD state.