H. P. Song
Chinese Academy of Sciences
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Featured researches published by H. P. Song.
Applied Physics Letters | 2011
Cheng Peng; Zhitang Song; Feng Rao; Liangcai Wu; Min Zhu; H. P. Song; Bo Liu; Xilin Zhou; Dongning Yao; Pingxiong Yang; Junhao Chu
Comparing with Ge2Sb2Te5, Al1.3Sb3Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (∼210u2009°C), larger crystallization activation energy (3.32 eV), and better data retention ability (124u2009°C for 10 yr). Furthermore, Al1.3Sb3Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al1.3Sb3Te based phase-change memory cell. Moreover, phase-change memory cell based on Al1.3Sb3Te material also has good endurance (∼2.5u2009×u2009104 cycles) and an enough resistance ratio of ∼102.
Applied Physics Letters | 2012
Cheng Peng; Liangcai Wu; Feng Rao; Zhitang Song; Pingxiong Yang; H. P. Song; Kun Ren; Xilin Zhou; Min Zhu; Bo Liu; Junhao Chu
W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb2Te increase markedly by W doping. The Wx(Sb2Te)1−x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster SET speed and better operation stability for the application in practical device. PCM device based on W0.07(Sb2Te)0.93 shows ultrafast SET operation (6u2009ns) and good endurance (1.8u2009×u2009105 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.
Applied Physics Letters | 2010
Anli Yang; H. P. Song; Liang Dc; H. Y. Wei; Xue-Yuan Liu; P. Jin; Xudong Qin; S. Y. Yang; Q. S. Zhu; Z.G. Wang
Temperature-dependent photoluminescence characteristics of non-polar m-plane ZnO and ZnMgO alloy films grown by metal organic chemical vapor deposition have been studied. The enhancement in emission intensity caused by localized excitons in m-plane ZnMgO alloy films was directly observed and it can be further improved after annealing in nitrogen. The concentration of Zn vacancies in the films was increased by alloying with Mg, which was detected by positron annihilation spectroscopy. This result is very important to directly explain why undoped Zn1-xMgxO thin films can show p-type conduction by controlling Mg content, as discussed by Li [Appl. Phys. Lett. 91, 232115 (2007)].
Applied Physics Letters | 2009
H. P. Song; Anli Yang; H. Y. Wei; Yufen Guo; B. Zhang; Guozong Zheng; S. Y. Yang; Xue-Yuan Liu; Q. S. Zhu; Z.G. Wang; T. Y. Yang; Wang H
In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.
Applied Physics Letters | 2009
Anli Yang; H. P. Song; Xue-Yuan Liu; H. Y. Wei; Yufen Guo; Guozong Zheng; Chunmei Jiao; S. Y. Yang; Q. S. Zhu; Z.G. Wang
MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.
Applied Physics Letters | 2009
Anli Yang; H. P. Song; H. Y. Wei; Xue-Yuan Liu; Wang J; X. Q. Lv; P. Jin; S. Y. Yang; Q. S. Zhu; Z.G. Wang
The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the intrinsic valence band offset.
Applied Surface Science | 2010
Yuzhen Guo; Xue-Yuan Liu; H. P. Song; Anli Yang; Xuguang Xu; Guozong Zheng; H. Y. Wei; S. Y. Yang; Q. S. Zhu; Z.G. Wang
Acta Materialia | 2014
Cheng Peng; Feng Rao; Liangcai Wu; Zhitang Song; Yifeng Gu; Dong Zhou; H. P. Song; Pingxiong Yang; Junhao Chu
Solid State Communications | 2010
H. P. Song; Guozong Zheng; Anli Yang; Yufen Guo; H. Y. Wei; Cong-Zhou Li; S. Y. Yang; Xue-Yuan Liu; Q. S. Zhu; Z.G. Wang
Journal of Crystal Growth | 2011
Kai Shi; Anli Yang; Wang J; H. P. Song; Xuguang Xu; Ling Sang; H. Y. Wei; S. Y. Yang; Xue-Yuan Liu; Q. S. Zhu; Z.G. Wang
