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Dive into the research topics where H. Sellier is active.

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Featured researches published by H. Sellier.


Physical Review Letters | 2004

Half-Integer Shapiro Steps at the 0-¿ Crossover of a Ferromagnetic Josephson Junction

H. Sellier; Claire Baraduc; F. Lefloch; R. Calemczuk

We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness and temperature. For a certain thickness a nonzero minimum of critical current is observed at the crossover temperature. We analyze this residual supercurrent by applying a high frequency excitation and observe the formation of half-integer Shapiro steps. We attribute these fractional steps to a doubling of the Josephson frequency due to a sin((2phi) current-phase relation. This phase dependence is explained by the splitting of the energy levels in the ferromagnetic exchange field.


Physical Review Letters | 2007

Imaging electron wave functions inside open quantum rings

Frederico Rodrigues Martins; Benoît Hackens; Marco G. Pala; Thierry Ouisse; H. Sellier; X. Wallart; S. Bollaert; A. Cappy; Joël Chevrier; Vincent Bayot; S. Huant

Combining scanning gate microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of the electron probability density |Psi|(2)(x,y) in embedded mesoscopic quantum rings. The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wave function interferences. Simulations of both |Psi|(2)(x,y) and SGM conductance maps reproduce the main experimental observations and link fringes in SGM images to |Psi|(2)(x,y).


Nature Physics | 2006

Imaging and controlling electron transport inside a quantum ring

Benoît Hackens; Frederico Rodrigues Martins; T. Ouisse; H. Sellier; S. Bollaert; X. Wallart; A. Cappy; J. Chevrier; Vincent Bayot; S. Huant

Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. Although powerful when coupled to statistical theories, this approach cannot provide a detailed image of ‘how electrons behave down there’. Ideally, understanding transport at the nanoscale would require tracking each electron inside the nanodevice. Significant progress towards this goal was obtained by combining scanning probe microscopy with transport measurements2,3,4,5,6,7. Some studies even showed signatures of quantum transport in the surroundings of nanostructures4,5,6. Here, scanning probe microscopy is used to probe electron propagation inside an open quantum ring exhibiting the archetype of electron-wave interference phenomena: the Aharonov–Bohm effect8. Conductance maps recorded while scanning the biased tip of a cryogenic atomic force microscope above the quantum ring show that the propagation of electrons, both coherent and ballistic, can be investigated in situ, and can even be controlled by tuning the potential felt by electrons at the nanoscale.


Semiconductor Science and Technology | 2011

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

H. Sellier; Benoît Hackens; Marco G. Pala; Frederico Rodrigues Martins; Samuel Baltazar; X. Wallart; L. Desplanque; Vincent Bayot; S. Huant

This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarize a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low-magnetic-field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microscopy. These include possible tip-induced artefacts, effects of a large bias applied to the scanning tip, as well as consequences of unwanted charge traps on the conductance maps. We emphasize how special care must be paid in interpreting these scanning-gate images.


Physical Review Letters | 2012

Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox

Marco G. Pala; S. Baltazar; Peng Liu; H. Sellier; Benoît Hackens; Frederico Rodrigues Martins; Vincent Bayot; X. Wallart; L. Desplanque; S. Huant

We present evidence for a counterintuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A scanning-probe experiment using a biased tip to modulate the transmission of one branch in the network reveals the occurrence of this paradox by mapping the conductance variation as a function of the tip voltage and position.


Nature Communications | 2010

Imaging Coulomb islands in a quantum Hall interferometer

Benoît Hackens; Frederico Rodrigues Martins; Sébastien Faniel; Constantin Augustin Dutu; H. Sellier; S. Huant; Marco G. Pala; L. Desplanque; X. Wallart; Vincent Bayot

In the quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward the theory that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of QH Coulomb islands, and reveal the spatial structure of transport inside a QH interferometer. Locations of electron islands are found by modulating the tunnelling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high-magnetic-field magnetoresistance oscillations, and opens the way to further local-scale manipulations of QH localized states.


Physical Review B | 2008

Local density of states in mesoscopic samples from scanning gate microscopy

Marco G. Pala; Benoît Hackens; Frederico Rodrigues Martins; H. Sellier; Vincent Bayot; S. Huant; T. Ouisse

We study the relationship between the local density of states (LDOS) and the conductance variation Delta G in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift Delta G is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and Delta G. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS-Delta G correspondence by means of exact numerical simulations, when localized states or semiclassical orbits characterize the wave function of the system.


Nature Communications | 2014

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy.

Boris Brun; Frederico Rodrigues Martins; Sébastien Faniel; Benoît Hackens; Guillaume Bachelier; A. Cavanna; C. Ulysse; Abdelkarim Ouerghi; U. Gennser; D. Mailly; S. Huant; Vincent Bayot; M. Sanquer; H. Sellier

Quantum point contacts exhibit mysterious conductance anomalies in addition to well-known conductance plateaus at multiples of 2e(2)/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position.


Physical Review B | 2012

Casimir force measurements in Au-Au and Au-Si cavities at low temperature

Justine Laurent; H. Sellier; Alexis Mosset; S. Huant; Joël Chevrier

materials. We show how the electrostatic environment of the interacting surfaces plays an important role in weak force measurements and can overcome the Casimir force at large distance. After minimizing these parasitic forces, we measure the Casimir force between a gold-coated sphere and either a gold-coated or a heavily doped silicon surface in the 100{400 nm distance range. We compare the experimental data with theoretical predictions and discuss the consequence of a systematic error in the scanner calibration on the agreement between experiment and theory. The relative force over the two surfaces compares favorably with theory at short distance, showing that this Casimir force experiment is sensitive to the dielectric properties of the interacting surfaces.


Nanotechnology | 2009

Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects

Marco G. Pala; S. Baltazar; Frederico Rodrigues Martins; Benoît Hackens; H. Sellier; Thierry Ouisse; Vincent Bayot; S. Huant

We study scanning gate microscopy (SGM) in open quantum rings obtained from buried semiconductor InGaAs/InAlAs heterostructures. By performing a theoretical analysis based on the Keldysh-Green function approach we interpret the radial fringes observed in experiments as the effect of randomly distributed charged defects. We associate SGM conductance images with the local density of states (LDOS) of the system. We show that such an association cannot be made with the current density distribution. By varying an external magnetic field we are able to reproduce recursive quasi-classical orbits in LDOS and conductance images, which bear the same periodicity as the Aharonov-Bohm effect.

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Benoît Hackens

Université catholique de Louvain

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S. Huant

Centre national de la recherche scientifique

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Frederico Rodrigues Martins

Université catholique de Louvain

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Vincent Bayot

Université catholique de Louvain

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X. Wallart

Centre national de la recherche scientifique

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Sébastien Faniel

Université catholique de Louvain

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L. Desplanque

Centre national de la recherche scientifique

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Joël Chevrier

Joseph Fourier University

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Thierry Ouisse

Centre national de la recherche scientifique

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