Haifeng Liang

Hardness of CNx films deposited by MCECR plasma sputtering

The CNx (carbon nitride) films were deposited on silicon (100) with Mirror-Confinement-type Electron Cyclotron Resonance (MCECR) plasma sputtering method, which sputters pure carbon target with the Ar/N2 plasma. The thickness of CNx films was about 80nm. In this paper, the hardness of CNx films was investigated, and it is measured by the nanoindenter. The technical parameters of MCECR plasma sputtering influencing the hardness of CNx films include the substrate bias, microwave power, target voltage, gas pressure, and the Ar/N2 ratio. Results shown that, the hardness of CNx films is bigger, when the substrate bias is at +30V, the microwave power is 200W, the target voltage is +500V, the gas pressure is 2×10-2Pa, and the Ar/N2 ratio is 9/1.

Hardness of DLC deposited by pulsed arc

Diamond-like carbon (DLC) films were deposited by means of pulsed vacuum arc ion source, and its hardness was measured using the HXD-1000 digital micro-hardness tester. Measurement results show that, substrate temperature, main loop voltage, pre-cleaning time, and pulse frequency influence hardness of DLC films. The relationships of hardness of DLC with these parameters were presented and the reasons were discussed in this paper, from these, an optimum DLC deposition technique by means of pulsed vacuum arc ion source was presented. The hardness of DLC films can be up to 25.36Gpa when the substrate temperature is 100°C, the pre-cleaning time is 30 min, the pulse frequency is 3Hz, the substrate angle is 45°;, and the main loop voltage is 200V.

Uniformity of DLC deposited by pulsed vacuum arc ion source

In this paper, the diamond-like carbon (DLC) film is deposited by pulsed vacuum arc ion source. A great lot of technical experiments are done with various technique parameters, including main loop voltage, pulse frequency, ion source structure and size, substrate height and magnetic intensity, for finding out the influence of technical parameters on film uniformity. Meantime, a handy film thickness measurement instrument is used to measure the distribution of film thickness. Finally, the influences of technique parameters on film uniformity are achieved.