Haiyan Lu

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology*

Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are −2.688 dBm at 210 GHz and −2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

An improved through line de-embedding method with even-odd mode measurement

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).

W-band InP DHBT MMIC Power Amplifier

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mm×1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.

W band power amplifier based on 1 µm InP DHBT

In this paper, a W-band power amplifier (PA) is presented by using 1 μm emitter length InP/InGaAs DHBT technology. The PA is consisted by 2 stages cascode cells and a common-emitter cell. The total circuit achieves more than 14 dB associate gain from 90 GHz to 98 GHz with input return loss greater than 30 dB and output return loss greater than 7 dB. The saturation output power reaches 18.5 dBm at 94 GHz. The chip area is 1.5 mm×1.1 mm.

A 220 GHz dynamic frequency divider in 0.5 μ m InP DHBT technology

A high performance 3 inch 0.5 μ m InP DHBT technology with three interconnecting layers has been developed. The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances. The 0.5×5 μ m 2 InP DHBTs demonstrated f t =350 GHz, f max =532 GHz and BV CEO =4.8 V, which were modeled using Agilent-HBT large signal model. As a benchmark circuit, a dynamic frequency divider operating from 110 to 220 GHz has been designed, fabricated and measured with this technology. The ultra-high-speed 0.5 μ m InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage, which makes it an ideal candidate for next generation 100 GHz+ mixed signal integrated circuits.

A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT

In this paper, a D-band power amplifier (PA) based on 0.5-μm InP DHBT is presented. Wilkinson combiners with broadband steppedimpedance matching are used, and the eight-way PA is designed for wideband power performance. As input power is fixed at 3 dBm, the PA exhibits a saturated output power of 16.8 dBm and 7.9% PAE at 150GHz with >45-GHz 3-dB power bandwidth from 125GHz to 170GHz. Meanwhile the 1-dB gain compression output power is 15.9 dBm at 150GHz. The >45-GHz 3-dB power bandwidth means a great flatness of power gain which is outstanding in reported D-band PAs to our best knowledge.

100GHz static frequency divider based on 0.5µm InP/InGaAs DHBT

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconnect were developed. Composite collector design and 0.5μm emitter width enable the static frequency divider operated at a frequency over 100GHz.

InP DHBT submillimeter-wave modeling based on electromagnetic simulation method

In this paper, a novel large-signal InP DHBT model upto Submillimeter-wave frequencies is proposed. The intrinsic part of HBT based on the improved agilentHBT model and EM simulation technique is presented to account for the distributed effect of interconnection of the fingers and their surroundings. The combined model implemented in Agilent-ADS is verified by comparing the simulated and measured data in dc and multi bias S-parameters. Good agreement between the measured and the simulated result has been demonstrated.

A large signal SDD model for InP DHBT

In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC and multi-bias small S parameters for InP DHBTs.

A Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with Ft and Fmax of 280GHz

A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm2 exhibits a current cutoff frequency ft and a maximum oscillation frequency fmax both of 280GHz. The breakdown voltage is more than 4V. The high speed InGaAs/InP DHBT with comparable high breakdown voltage is promising for voltage controlled oscillator (VCO) and mixer applications at W band or even higher frequencies.