Hajime Kamioka

A new sub-micron emitter formation with reduced base resistance for ultra high speed devices

A new self-aligning method has been developed to control the emitter width of bipolar transistors in sub-micron sizes. This permits accurate control of distance between the emitter and the base contact region, namely, the outer base region. Desired emitter widths less than the 0.5 µm range, suitable for use in IC production, are routinely achieved.

A new method of emitter formation for microwave transistors and high speed monolithic integrated circuits

Toward improving the yield of high speed device technology, it is essential to overcome E-B shorting and electrode metalization problems intrinsic to the washed emitter method. We have succeeded in forming a very shallow (∼ 1500 A) and very narrow (< 3µ) emitter with excellent reproducibility by utilizing an As (or P) doped poly-silicon (DOPOS) as emitter diffusion source.