Hajime Kurihara
Epson
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Publication
Featured researches published by Hajime Kurihara.
IEEE Transactions on Electron Devices | 1985
S. Morozumi; Hajime Kurihara; T. Takeshita; H. Oka; K. Hasegawa
A new contact-type linear image sensor has been developed, which integrates a-Si:H photodiode and poly-Si TFT driving circuits on a quartz substrate. The C-MOS shift register of poly-Si TFT can operate in the frequency range from dc to 2 MHz. The sensor contains 848 bits with the density of 8 bits/mm on the substrate of 2 × 125 mm size. A readout time of less than 1 µs, a S/N ratio higher than 40 dB, and a saturation exposure of 0.89 lx . s are obtained.
IEEE Transactions on Electron Devices | 1989
M. Kunii; K. Hasegawa; H. Oka; Y. Nakazawa; T. Takeshita; Hajime Kurihara
A 400 DPI (dots-per-inch) contact-type linear image sensor with a scanning speed of 2 ms/line using amorphous silicon photodiodes and poly-Si thin-film transistor drivers has been developed. The characteristics of the heterojunction photodiodes are discussed, and the results of sensor performance tests are examined in terms of output signal uniformity, photoresponse lag, spectral response, gray scale, and the reliability of the 400 DPI image sensor. >
Archive | 1998
Tsukasa Kosuda; Yutaka Kondo; Hajime Kurihara; Norimitsu Baba
Archive | 1990
Masanao Kunugi; Hajime Kurihara; Teruyuki Mizumoto
Archive | 1988
Masanao Kunugi; Hajime Kurihara; Teruyuki Mizumoto
Archive | 1991
Masanao Kunugi; Hiroshi Itoh; Hajime Kurihara
Archive | 1993
Hidetsugu Shimura; Hajime Kurihara; Akihiko Ikegami; Hiroshi Tanaka; Kenjirou Yoshioka
Archive | 1997
Nozomu Inoue; Kyu Takada; Hajime Kurihara; Yoshiro Koga
Archive | 2001
Tsukasa Kosuda; Norimitsu Baba; Hajime Kurihara; Motomu Hayakawa
Archive | 1990
Hidetsugu Shimura; Hajime Kurihara
